ページ 2 - GeneSiC Semiconductor 製品 - ダイオード - ブリッジ整流器

部品番号	メーカ	説明	パッケージ	在庫	Technology	Voltage - Peak Reverse (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BR81	GeneSiC Semiconductor	DIODE BRIDGE 100V 8A BR-8 Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 100V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A Current - Reverse Leakage @ Vr: 10µA @ 100V Operating Temperature: -65°C ~ 125°C (TJ) Mounting Type: Through Hole Package / Case: 4-Square, BR-8 Supplier Device Package: BR-8	パッケージ: 4-Square, BR-8	在庫16,704	Standard	100V	8A	1.1V @ 4A	10µA @ 100V	-65°C ~ 125°C (TJ)	Through Hole	4-Square, BR-8	BR-8
BR62	GeneSiC Semiconductor	DIODE BRIDGE 200V 6A BR-6 Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 200V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1V @ 3A Current - Reverse Leakage @ Vr: 10µA @ 200V Operating Temperature: -65°C ~ 125°C (TJ) Mounting Type: Through Hole Package / Case: 4-Square, BR-6 Supplier Device Package: BR-6	パッケージ: 4-Square, BR-6	在庫17,544	Standard	200V	6A	1V @ 3A	10µA @ 200V	-65°C ~ 125°C (TJ)	Through Hole	4-Square, BR-6	BR-6
KBU8M	GeneSiC Semiconductor	DIODE BRIDGE 1000V 8A KBU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1000V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1V @ 8A Current - Reverse Leakage @ Vr: 10µA @ 1000V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, KBU Supplier Device Package: KBU	パッケージ: 4-SIP, KBU	在庫16,440	Standard	1000V	8A	1V @ 8A	10µA @ 1000V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, KBU	KBU
W01M	GeneSiC Semiconductor	DIODE BRIDGE 100V 1.5A WOM Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 100V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Current - Reverse Leakage @ Vr: 10µA @ 100V Operating Temperature: -65°C ~ 125°C (TJ) Mounting Type: Through Hole Package / Case: 4-Circular, WOM Supplier Device Package: WOM	パッケージ: 4-Circular, WOM	在庫145,692	Standard	100V	1.5A	1V @ 1A	10µA @ 100V	-65°C ~ 125°C (TJ)	Through Hole	4-Circular, WOM	WOM
GBPC2510W	GeneSiC Semiconductor	DIODE BRIDGE 1000V 25A GBPC-T/W Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1000V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A Current - Reverse Leakage @ Vr: 5µA @ 1000V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-Square, GBPC-W Supplier Device Package: GBPC-W	パッケージ: 4-Square, GBPC-W	在庫3,456	Standard	1000V	25A	1.1V @ 12.5A	5µA @ 1000V	-55°C ~ 150°C (TJ)	Through Hole	4-Square, GBPC-W	GBPC-W
GBPC3504W	GeneSiC Semiconductor	DIODE BRIDGE 400V 35A GBPC-T/W Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 400V Current - Average Rectified (Io): 35A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 17.5A Current - Reverse Leakage @ Vr: 5µA @ 400V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-Square, GBPC-W Supplier Device Package: GBPC-W	パッケージ: 4-Square, GBPC-W	在庫5,536	Standard	400V	35A	1.1V @ 17.5A	5µA @ 400V	-55°C ~ 150°C (TJ)	Through Hole	4-Square, GBPC-W	GBPC-W
GBPC3504T	GeneSiC Semiconductor	DIODE BRIDGE 400V 35A GBPC-T/W Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 400V Current - Average Rectified (Io): 35A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A Current - Reverse Leakage @ Vr: 5µA @ 400V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: QC Terminal Package / Case: 4-Square, GBPC-T Supplier Device Package: GBPC-T	パッケージ: 4-Square, GBPC-T	在庫19,032	Standard	400V	35A	1.1V @ 12.5A	5µA @ 400V	-55°C ~ 150°C (TJ)	QC Terminal	4-Square, GBPC-T	GBPC-T
GBPC2508W	GeneSiC Semiconductor	DIODE BRIDGE 800V 25A GBPC-T/W Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.2A Current - Reverse Leakage @ Vr: 5µA @ 800V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-Square, GBPC-W Supplier Device Package: GBPC-W	パッケージ: 4-Square, GBPC-W	在庫43,872	Standard	800V	25A	1.1V @ 1.2A	5µA @ 800V	-55°C ~ 150°C (TJ)	Through Hole	4-Square, GBPC-W	GBPC-W
GBPC3502T	GeneSiC Semiconductor	DIODE BRIDGE 200V 35A GBPC-T/W Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 200V Current - Average Rectified (Io): 35A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A Current - Reverse Leakage @ Vr: 5µA @ 200V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: QC Terminal Package / Case: 4-Square, GBPC-T Supplier Device Package: GBPC-T	パッケージ: 4-Square, GBPC-T	在庫21,816	Standard	200V	35A	1.1V @ 12.5A	5µA @ 200V	-55°C ~ 150°C (TJ)	QC Terminal	4-Square, GBPC-T	GBPC-T
GBPC2508T	GeneSiC Semiconductor	DIODE BRIDGE 800V 25A GBPC-T/W Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A Current - Reverse Leakage @ Vr: 5µA @ 800V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: QC Terminal Package / Case: 4-Square, GBPC Supplier Device Package: GBPC	パッケージ: 4-Square, GBPC	在庫16,848	Standard	800V	25A	1.1V @ 12.5A	5µA @ 800V	-55°C ~ 150°C (TJ)	QC Terminal	4-Square, GBPC	GBPC
GBPC3508W	GeneSiC Semiconductor	DIODE BRIDGE 800V 35A GBPC-T/W Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800V Current - Average Rectified (Io): 35A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 17.5A Current - Reverse Leakage @ Vr: 5µA @ 800V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-Square, GBPC-W Supplier Device Package: GBPC-W	パッケージ: 4-Square, GBPC-W	在庫7,200	Standard	800V	35A	1.1V @ 17.5A	5µA @ 800V	-55°C ~ 150°C (TJ)	Through Hole	4-Square, GBPC-W	GBPC-W
GBPC3510W	GeneSiC Semiconductor	DIODE BRIDGE 1000V 35A GBPC-T/W Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1000V Current - Average Rectified (Io): 35A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 17.5A Current - Reverse Leakage @ Vr: 5µA @ 1000V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-Square, GBPC-W Supplier Device Package: GBPC-W	パッケージ: 4-Square, GBPC-W	在庫33,396	Standard	1000V	35A	1.1V @ 17.5A	5µA @ 1000V	-55°C ~ 150°C (TJ)	Through Hole	4-Square, GBPC-W	GBPC-W
GBPC2506W	GeneSiC Semiconductor	DIODE BRIDGE 600V 25A GBPC-T/W Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A Current - Reverse Leakage @ Vr: 5µA @ 600V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-Square, GBPC-W Supplier Device Package: GBPC-W	パッケージ: 4-Square, GBPC-W	在庫4,736	Standard	600V	25A	1.1V @ 12.5A	5µA @ 600V	-55°C ~ 150°C (TJ)	Through Hole	4-Square, GBPC-W	GBPC-W
GBPC2504W	GeneSiC Semiconductor	DIODE BRIDGE 400V 25A GBPC-T/W Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 400V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A Current - Reverse Leakage @ Vr: 5µA @ 400V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-Square, GBPC-W Supplier Device Package: GBPC-W	パッケージ: 4-Square, GBPC-W	在庫6,704	Standard	400V	25A	1.1V @ 12.5A	5µA @ 400V	-55°C ~ 150°C (TJ)	Through Hole	4-Square, GBPC-W	GBPC-W
GBPC2504T	GeneSiC Semiconductor	DIODE BRIDGE 400V 25A GBPC-T/W Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 400V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A Current - Reverse Leakage @ Vr: 5µA @ 400V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: QC Terminal Package / Case: 4-Square, GBPC Supplier Device Package: GBPC	パッケージ: 4-Square, GBPC	在庫20,916	Standard	400V	25A	1.1V @ 12.5A	5µA @ 400V	-55°C ~ 150°C (TJ)	QC Terminal	4-Square, GBPC	GBPC
GBPC2506T	GeneSiC Semiconductor	DIODE BRIDGE 600V 25A GBPC-T/W Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A Current - Reverse Leakage @ Vr: 5µA @ 600V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: QC Terminal Package / Case: 4-Square, GBPC Supplier Device Package: GBPC	パッケージ: 4-Square, GBPC	在庫22,092	Standard	600V	25A	1.1V @ 12.5A	5µA @ 600V	-55°C ~ 150°C (TJ)	QC Terminal	4-Square, GBPC	GBPC
GBPC2502W	GeneSiC Semiconductor	DIODE BRIDGE 200V 25A GBPC-T/W Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 200V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A Current - Reverse Leakage @ Vr: 5µA @ 200V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-Square, GBPC-W Supplier Device Package: GBPC-W	パッケージ: 4-Square, GBPC-W	在庫6,224	Standard	200V	25A	1.1V @ 12.5A	5µA @ 200V	-55°C ~ 150°C (TJ)	Through Hole	4-Square, GBPC-W	GBPC-W
GBL02	GeneSiC Semiconductor	DIODE BRIDGE 200V 4 A- GBL Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 200V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A Current - Reverse Leakage @ Vr: 5µA @ 200V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBL Supplier Device Package: GBL	パッケージ: 4-SIP, GBL	在庫6,036	Standard	200V	4A	1.1V @ 4A	5µA @ 200V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBL	GBL
KBU6D	GeneSiC Semiconductor	DIODE BRIDGE 200V 6A KBU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 200V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1V @ 6A Current - Reverse Leakage @ Vr: 10µA @ 200V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, KBU Supplier Device Package: KBU	パッケージ: 4-SIP, KBU	在庫4,896	Standard	200V	6A	1V @ 6A	10µA @ 200V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, KBU	KBU
W02M	GeneSiC Semiconductor	DIODE BRIDGE 200V 1.5A WOM Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 200V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Current - Reverse Leakage @ Vr: 10µA @ 200V Operating Temperature: -65°C ~ 125°C (TJ) Mounting Type: Through Hole Package / Case: 4-Circular, WOM Supplier Device Package: WOM	パッケージ: 4-Circular, WOM	在庫24,120	Standard	200V	1.5A	1V @ 1A	10µA @ 200V	-65°C ~ 125°C (TJ)	Through Hole	4-Circular, WOM	WOM
GBJ6D	GeneSiC Semiconductor	200V 6A GBJ SINGLE PHASE BRIDGE Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBJ Supplier Device Package: GBJ	パッケージ: -	Request a Quote	Standard	200 V	6 A	1.05 V @ 3 A	5 µA @ 200 V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBJ	GBJ
GBJ6B	GeneSiC Semiconductor	100V 6A GBJ SINGLE PHASE BRIDGE Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBJ Supplier Device Package: GBJ	パッケージ: -	Request a Quote	Standard	100 V	6 A	1.05 V @ 3 A	5 µA @ 100 V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBJ	GBJ
GBJ6M	GeneSiC Semiconductor	1000V 6A GBJ SINGLE PHASE BRIDGE Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBJ Supplier Device Package: GBJ	パッケージ: -	Request a Quote	Standard	1 kV	6 A	1.05 V @ 3 A	5 µA @ 1000 V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBJ	GBJ
GBJ6K	GeneSiC Semiconductor	800V 6A GBJ SINGLE PHASE BRIDGE Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBJ Supplier Device Package: GBJ	パッケージ: -	Request a Quote	Standard	800 V	6 A	1.05 V @ 3 A	5 µA @ 800 V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBJ	GBJ
GBJ6J	GeneSiC Semiconductor	600V 6A GBJ SINGLE PHASE BRIDGE Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBJ Supplier Device Package: GBJ	パッケージ: -	Request a Quote	Standard	600 V	6 A	1.05 V @ 3 A	5 µA @ 600 V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBJ	GBJ
GBJ6G	GeneSiC Semiconductor	400V 6A GBJ SINGLE PHASE BRIDGE Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBJ Supplier Device Package: GBJ	パッケージ: -	Request a Quote	Standard	400 V	6 A	1.05 V @ 3 A	5 µA @ 400 V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBJ	GBJ
GBJ35M	GeneSiC Semiconductor	1000V 35A GBJ SINGLE PHASE BRIDG Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 35 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBJ Supplier Device Package: GBJ	パッケージ: -	Request a Quote	Standard	1 kV	35 A	1.1 V @ 17.5 A	10 µA @ 1000 V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBJ	GBJ
GBJ35J	GeneSiC Semiconductor	600V 35A GBJ SINGLE PHASE BRIDGE Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 35 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBJ Supplier Device Package: GBJ	パッケージ: -	Request a Quote	Standard	600 V	35 A	1.1 V @ 17.5 A	10 µA @ 600 V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBJ	GBJ
GBJ35K	GeneSiC Semiconductor	800V 35A GBJ SINGLE PHASE BRIDGE Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 35 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBJ Supplier Device Package: GBJ	パッケージ: -	Request a Quote	Standard	800 V	35 A	1.1 V @ 17.5 A	10 µA @ 800 V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBJ	GBJ
GBJ35G	GeneSiC Semiconductor	400V 35A GBJ SINGLE PHASE BRIDGE Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 35 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBJ Supplier Device Package: GBJ	パッケージ: -	Request a Quote	Standard	400 V	35 A	1.1 V @ 17.5 A	10 µA @ 400 V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBJ	GBJ

BR81

GeneSiC Semiconductor

DIODE BRIDGE 100V 8A BR-8

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 100V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
Current - Reverse Leakage @ Vr: 10µA @ 100V
Operating Temperature: -65°C ~ 125°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-Square, BR-8
Supplier Device Package: BR-8

パッケージ: 4-Square, BR-8

在庫16,704

Standard

100V

8A

1.1V @ 4A

10µA @ 100V

-65°C ~ 125°C (TJ)

Through Hole

4-Square, BR-8

BR-8

BR62

GeneSiC Semiconductor

DIODE BRIDGE 200V 6A BR-6

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 200V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
Current - Reverse Leakage @ Vr: 10µA @ 200V
Operating Temperature: -65°C ~ 125°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-Square, BR-6
Supplier Device Package: BR-6

パッケージ: 4-Square, BR-6

在庫17,544

Standard

200V

6A

1V @ 3A

10µA @ 200V

-65°C ~ 125°C (TJ)

Through Hole

4-Square, BR-6

BR-6

KBU8M

GeneSiC Semiconductor

DIODE BRIDGE 1000V 8A KBU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1000V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1V @ 8A
Current - Reverse Leakage @ Vr: 10µA @ 1000V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, KBU
Supplier Device Package: KBU

パッケージ: 4-SIP, KBU

在庫16,440

Standard

1000V

8A

1V @ 8A

10µA @ 1000V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, KBU

KBU

W01M

GeneSiC Semiconductor

DIODE BRIDGE 100V 1.5A WOM

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 100V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Current - Reverse Leakage @ Vr: 10µA @ 100V
Operating Temperature: -65°C ~ 125°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-Circular, WOM
Supplier Device Package: WOM

パッケージ: 4-Circular, WOM

在庫145,692

Standard

100V

1.5A

1V @ 1A

10µA @ 100V

-65°C ~ 125°C (TJ)

Through Hole

4-Circular, WOM

WOM

GBPC2510W

GeneSiC Semiconductor

DIODE BRIDGE 1000V 25A GBPC-T/W

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1000V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-Square, GBPC-W
Supplier Device Package: GBPC-W

パッケージ: 4-Square, GBPC-W

在庫3,456

Standard

1000V

25A

1.1V @ 12.5A

5µA @ 1000V

-55°C ~ 150°C (TJ)

Through Hole

4-Square, GBPC-W

GBPC-W

GBPC3504W

GeneSiC Semiconductor

DIODE BRIDGE 400V 35A GBPC-T/W

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 400V
Current - Average Rectified (Io): 35A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 17.5A
Current - Reverse Leakage @ Vr: 5µA @ 400V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-Square, GBPC-W
Supplier Device Package: GBPC-W

パッケージ: 4-Square, GBPC-W

在庫5,536

Standard

400V

35A

1.1V @ 17.5A

5µA @ 400V

-55°C ~ 150°C (TJ)

Through Hole

4-Square, GBPC-W

GBPC-W

GBPC3504T

GeneSiC Semiconductor

DIODE BRIDGE 400V 35A GBPC-T/W

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 400V
Current - Average Rectified (Io): 35A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A
Current - Reverse Leakage @ Vr: 5µA @ 400V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: QC Terminal
Package / Case: 4-Square, GBPC-T
Supplier Device Package: GBPC-T

パッケージ: 4-Square, GBPC-T

在庫19,032

Standard

400V

35A

1.1V @ 12.5A

5µA @ 400V

-55°C ~ 150°C (TJ)

QC Terminal

4-Square, GBPC-T

GBPC-T

GBPC2508W

GeneSiC Semiconductor

DIODE BRIDGE 800V 25A GBPC-T/W

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.2A
Current - Reverse Leakage @ Vr: 5µA @ 800V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-Square, GBPC-W
Supplier Device Package: GBPC-W

パッケージ: 4-Square, GBPC-W

在庫43,872

Standard

800V

25A

1.1V @ 1.2A

5µA @ 800V

-55°C ~ 150°C (TJ)

Through Hole

4-Square, GBPC-W

GBPC-W

GBPC3502T

GeneSiC Semiconductor

DIODE BRIDGE 200V 35A GBPC-T/W

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 200V
Current - Average Rectified (Io): 35A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A
Current - Reverse Leakage @ Vr: 5µA @ 200V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: QC Terminal
Package / Case: 4-Square, GBPC-T
Supplier Device Package: GBPC-T

パッケージ: 4-Square, GBPC-T

在庫21,816

Standard

200V

35A

1.1V @ 12.5A

5µA @ 200V

-55°C ~ 150°C (TJ)

QC Terminal

4-Square, GBPC-T

GBPC-T

GBPC2508T

GeneSiC Semiconductor

DIODE BRIDGE 800V 25A GBPC-T/W

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A
Current - Reverse Leakage @ Vr: 5µA @ 800V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: QC Terminal
Package / Case: 4-Square, GBPC
Supplier Device Package: GBPC

パッケージ: 4-Square, GBPC

在庫16,848

Standard

800V

25A

1.1V @ 12.5A

5µA @ 800V

-55°C ~ 150°C (TJ)

QC Terminal

4-Square, GBPC

GBPC

GBPC3508W

GeneSiC Semiconductor

DIODE BRIDGE 800V 35A GBPC-T/W

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800V
Current - Average Rectified (Io): 35A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 17.5A
Current - Reverse Leakage @ Vr: 5µA @ 800V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-Square, GBPC-W
Supplier Device Package: GBPC-W

パッケージ: 4-Square, GBPC-W

在庫7,200

Standard

800V

35A

1.1V @ 17.5A

5µA @ 800V

-55°C ~ 150°C (TJ)

Through Hole

4-Square, GBPC-W

GBPC-W

GBPC3510W

GeneSiC Semiconductor

DIODE BRIDGE 1000V 35A GBPC-T/W

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1000V
Current - Average Rectified (Io): 35A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 17.5A
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-Square, GBPC-W
Supplier Device Package: GBPC-W

パッケージ: 4-Square, GBPC-W

在庫33,396

Standard

1000V

35A

1.1V @ 17.5A

5µA @ 1000V

-55°C ~ 150°C (TJ)

Through Hole

4-Square, GBPC-W

GBPC-W

GBPC2506W

GeneSiC Semiconductor

DIODE BRIDGE 600V 25A GBPC-T/W

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A
Current - Reverse Leakage @ Vr: 5µA @ 600V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-Square, GBPC-W
Supplier Device Package: GBPC-W

パッケージ: 4-Square, GBPC-W

在庫4,736

Standard

600V

25A

1.1V @ 12.5A

5µA @ 600V

-55°C ~ 150°C (TJ)

Through Hole

4-Square, GBPC-W

GBPC-W

GBPC2504W

GeneSiC Semiconductor

DIODE BRIDGE 400V 25A GBPC-T/W

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 400V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A
Current - Reverse Leakage @ Vr: 5µA @ 400V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-Square, GBPC-W
Supplier Device Package: GBPC-W

パッケージ: 4-Square, GBPC-W

在庫6,704

Standard

400V

25A

1.1V @ 12.5A

5µA @ 400V

-55°C ~ 150°C (TJ)

Through Hole

4-Square, GBPC-W

GBPC-W

GBPC2504T

GeneSiC Semiconductor

DIODE BRIDGE 400V 25A GBPC-T/W

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 400V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A
Current - Reverse Leakage @ Vr: 5µA @ 400V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: QC Terminal
Package / Case: 4-Square, GBPC
Supplier Device Package: GBPC

パッケージ: 4-Square, GBPC

在庫20,916

Standard

400V

25A

1.1V @ 12.5A

5µA @ 400V

-55°C ~ 150°C (TJ)

QC Terminal

4-Square, GBPC

GBPC

GBPC2506T

GeneSiC Semiconductor

DIODE BRIDGE 600V 25A GBPC-T/W

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A
Current - Reverse Leakage @ Vr: 5µA @ 600V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: QC Terminal
Package / Case: 4-Square, GBPC
Supplier Device Package: GBPC

パッケージ: 4-Square, GBPC

在庫22,092

Standard

600V

25A

1.1V @ 12.5A

5µA @ 600V

-55°C ~ 150°C (TJ)

QC Terminal

4-Square, GBPC

GBPC

GBPC2502W

GeneSiC Semiconductor

DIODE BRIDGE 200V 25A GBPC-T/W

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 200V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A
Current - Reverse Leakage @ Vr: 5µA @ 200V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-Square, GBPC-W
Supplier Device Package: GBPC-W

パッケージ: 4-Square, GBPC-W

在庫6,224

Standard

200V

25A

1.1V @ 12.5A

5µA @ 200V

-55°C ~ 150°C (TJ)

Through Hole

4-Square, GBPC-W

GBPC-W

GBL02

GeneSiC Semiconductor

DIODE BRIDGE 200V 4 A- GBL

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 200V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
Current - Reverse Leakage @ Vr: 5µA @ 200V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBL
Supplier Device Package: GBL

パッケージ: 4-SIP, GBL

在庫6,036

Standard

200V

4A

1.1V @ 4A

5µA @ 200V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBL

GBL

KBU6D

GeneSiC Semiconductor

DIODE BRIDGE 200V 6A KBU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 200V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1V @ 6A
Current - Reverse Leakage @ Vr: 10µA @ 200V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, KBU
Supplier Device Package: KBU

パッケージ: 4-SIP, KBU

在庫4,896

Standard

200V

6A

1V @ 6A

10µA @ 200V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, KBU

KBU

W02M

GeneSiC Semiconductor

DIODE BRIDGE 200V 1.5A WOM

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 200V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Current - Reverse Leakage @ Vr: 10µA @ 200V
Operating Temperature: -65°C ~ 125°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-Circular, WOM
Supplier Device Package: WOM

パッケージ: 4-Circular, WOM

在庫24,120

Standard

200V

1.5A

1V @ 1A

10µA @ 200V

-65°C ~ 125°C (TJ)

Through Hole

4-Circular, WOM

WOM

GBJ6D

GeneSiC Semiconductor

200V 6A GBJ SINGLE PHASE BRIDGE

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBJ
Supplier Device Package: GBJ

パッケージ: -

Request a Quote

Standard

200 V

6 A

1.05 V @ 3 A

5 µA @ 200 V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBJ

GBJ

GBJ6B

GeneSiC Semiconductor

100V 6A GBJ SINGLE PHASE BRIDGE

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBJ
Supplier Device Package: GBJ

パッケージ: -

Request a Quote

Standard

100 V

6 A

1.05 V @ 3 A

5 µA @ 100 V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBJ

GBJ

GBJ6M

GeneSiC Semiconductor

1000V 6A GBJ SINGLE PHASE BRIDGE

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBJ
Supplier Device Package: GBJ

パッケージ: -

Request a Quote

Standard

1 kV

6 A

1.05 V @ 3 A

5 µA @ 1000 V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBJ

GBJ

GBJ6K

GeneSiC Semiconductor

800V 6A GBJ SINGLE PHASE BRIDGE

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBJ
Supplier Device Package: GBJ

パッケージ: -

Request a Quote

Standard

800 V

6 A

1.05 V @ 3 A

5 µA @ 800 V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBJ

GBJ

GBJ6J

GeneSiC Semiconductor

600V 6A GBJ SINGLE PHASE BRIDGE

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBJ
Supplier Device Package: GBJ

パッケージ: -

Request a Quote

Standard

600 V

6 A

1.05 V @ 3 A

5 µA @ 600 V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBJ

GBJ

GBJ6G

GeneSiC Semiconductor

400V 6A GBJ SINGLE PHASE BRIDGE

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBJ
Supplier Device Package: GBJ

パッケージ: -

Request a Quote

Standard

400 V

6 A

1.05 V @ 3 A

5 µA @ 400 V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBJ

GBJ

GBJ35M

GeneSiC Semiconductor

1000V 35A GBJ SINGLE PHASE BRIDG

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBJ
Supplier Device Package: GBJ

パッケージ: -

Request a Quote

Standard

1 kV

35 A

1.1 V @ 17.5 A

10 µA @ 1000 V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBJ

GBJ

GBJ35J

GeneSiC Semiconductor

600V 35A GBJ SINGLE PHASE BRIDGE

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBJ
Supplier Device Package: GBJ

パッケージ: -

Request a Quote

Standard

600 V

35 A

1.1 V @ 17.5 A

10 µA @ 600 V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBJ

GBJ

GBJ35K

GeneSiC Semiconductor

800V 35A GBJ SINGLE PHASE BRIDGE

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBJ
Supplier Device Package: GBJ

パッケージ: -

Request a Quote

Standard

800 V

35 A

1.1 V @ 17.5 A

10 µA @ 800 V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBJ

GBJ

GBJ35G

GeneSiC Semiconductor

400V 35A GBJ SINGLE PHASE BRIDGE

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBJ
Supplier Device Package: GBJ

パッケージ: -

Request a Quote

Standard

400 V

35 A

1.1 V @ 17.5 A

10 µA @ 400 V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBJ

GBJ