ページ 4 - GeneSiC Semiconductor 製品 - ダイオード - ブリッジ整流器 | Heisener Electronics
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GeneSiC Semiconductor 製品 - ダイオード - ブリッジ整流器

レコード 345
ページ  4/12
画像
部品番号
メーカ
説明
パッケージ
在庫
数量
Technology
Voltage - Peak Reverse (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Current - Reverse Leakage @ Vr
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BR305
GeneSiC Semiconductor

DIODE BRIDGE 50V 3A BR-3

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1.5A
  • Current - Reverse Leakage @ Vr: 10µA @ 50V
  • Operating Temperature: -65°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, BR-3
  • Supplier Device Package: BR-3
パッケージ: 4-Square, BR-3
在庫6,624
Standard
50V
3A
1V @ 1.5A
10µA @ 50V
-65°C ~ 125°C (TJ)
Through Hole
4-Square, BR-3
BR-3
hot KBP210G
GeneSiC Semiconductor

DIODE BRIDGE 2A 1000V 1PH KBP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
  • Current - Reverse Leakage @ Vr: 10µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBP
  • Supplier Device Package: KBP
パッケージ: 4-SIP, KBP
在庫7,248
Standard
1000V
2A
1.1V @ 2A
10µA @ 1000V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBP
KBP
hot KBP208G
GeneSiC Semiconductor

DIODE BRIDGE 2A 800V 1PH KBP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
  • Current - Reverse Leakage @ Vr: 10µA @ 50V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBP
  • Supplier Device Package: KBP
パッケージ: 4-SIP, KBP
在庫79,704
Standard
800V
2A
1.1V @ 2A
10µA @ 50V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBP
KBP
hot KBP206G
GeneSiC Semiconductor

DIODE BRIDGE 2A 600V 1PH KBP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBP
  • Supplier Device Package: KBP
パッケージ: 4-SIP, KBP
在庫103,896
Standard
600V
2A
1.1V @ 2A
10µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBP
KBP
hot KBP204G
GeneSiC Semiconductor

DIODE BRIDGE 2A 400V 1PH KBP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBP
  • Supplier Device Package: KBP
パッケージ: 4-SIP, KBP
在庫5,056
Standard
400V
2A
1.1V @ 2A
10µA @ 400V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBP
KBP
KBP203G
GeneSiC Semiconductor

DIODE BRIDGE 2A 200V 1PH KBP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBP
  • Supplier Device Package: KBP
パッケージ: 4-SIP, KBP
在庫5,584
Standard
200V
2A
1.1V @ 2A
10µA @ 200V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBP
KBP
hot KBP202G
GeneSiC Semiconductor

DIODE BRIDGE 2A 100V 1PH KBP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
  • Current - Reverse Leakage @ Vr: 10µA @ 100V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBP
  • Supplier Device Package: KBP
パッケージ: 4-SIP, KBP
在庫8,844
Standard
100V
2A
1.1V @ 2A
10µA @ 100V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBP
KBP
hot KBP201G
GeneSiC Semiconductor

DIODE BRIDGE 2A 50V 1PH KBP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
  • Current - Reverse Leakage @ Vr: 10µA @ 50V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBP
  • Supplier Device Package: KBP
パッケージ: 4-SIP, KBP
在庫10,428
Standard
50V
2A
1.1V @ 2A
10µA @ 50V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBP
KBP
hot KBL406G
GeneSiC Semiconductor

DIODE BRIDGE 600V 4A KBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBL
  • Supplier Device Package: KBL
パッケージ: 4-SIP, KBL
在庫6,368
Standard
600V
4A
1.1V @ 4A
5µA @ 600V
-50°C ~ 150°C (TJ)
Through Hole
4-SIP, KBL
KBL
KBL404G
GeneSiC Semiconductor

DIODE BRIDGE 400V 4A KBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBL
  • Supplier Device Package: KBL
パッケージ: 4-SIP, KBL
在庫7,936
Standard
400V
4A
1.1V @ 4A
5µA @ 400V
-50°C ~ 150°C (TJ)
Through Hole
4-SIP, KBL
KBL
KBL403G
GeneSiC Semiconductor

DIODE BRIDGE 200V 4A KBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBL
  • Supplier Device Package: KBL
パッケージ: 4-SIP, KBL
在庫3,504
Standard
200V
4A
1.1V @ 4A
5µA @ 200V
-50°C ~ 150°C (TJ)
Through Hole
4-SIP, KBL
KBL
KBL402G
GeneSiC Semiconductor

DIODE BRIDGE 100V 4A KBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBL
  • Supplier Device Package: KBL
パッケージ: 4-SIP, KBL
在庫5,040
Standard
100V
4A
1.1V @ 4A
5µA @ 100V
-50°C ~ 150°C (TJ)
Through Hole
4-SIP, KBL
KBL
KBL401G
GeneSiC Semiconductor

DIODE BRIDGE 50V 4A KBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBL
  • Supplier Device Package: KBL
パッケージ: 4-SIP, KBL
在庫3,824
Standard
50V
4A
1.1V @ 4A
5µA @ 50V
-50°C ~ 150°C (TJ)
Through Hole
4-SIP, KBL
KBL
hot KBP208
GeneSiC Semiconductor

DIODE BRIDGE 800V 2A KBP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
  • Current - Reverse Leakage @ Vr: 10µA @ 50V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBP
  • Supplier Device Package: KBP
パッケージ: 4-SIP, KBP
在庫192,000
Standard
800V
2A
1.1V @ 2A
10µA @ 50V
-50°C ~ 150°C (TJ)
Through Hole
4-SIP, KBP
KBP
hot KBP206
GeneSiC Semiconductor

DIODE BRIDGE 600V 2A KBP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBP
  • Supplier Device Package: KBP
パッケージ: 4-SIP, KBP
在庫913,680
Standard
600V
2A
1.1V @ 2A
10µA @ 600V
-50°C ~ 150°C (TJ)
Through Hole
4-SIP, KBP
KBP
KBP204
GeneSiC Semiconductor

DIODE BRIDGE 400V 2A KBP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
  • Current - Reverse Leakage @ Vr: 10µA @ 50V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBP
  • Supplier Device Package: KBP
パッケージ: 4-SIP, KBP
在庫6,000
Standard
400V
2A
1.1V @ 2A
10µA @ 50V
-50°C ~ 150°C (TJ)
Through Hole
4-SIP, KBP
KBP
KBP203
GeneSiC Semiconductor

DIODE BRIDGE 200V 2A KBP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBP
  • Supplier Device Package: KBP
パッケージ: 4-SIP, KBP
在庫5,904
Standard
200V
2A
1.1V @ 2A
10µA @ 200V
-50°C ~ 150°C (TJ)
Through Hole
4-SIP, KBP
KBP
KBP202
GeneSiC Semiconductor

DIODE BRIDGE 100V 2A KBP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
  • Current - Reverse Leakage @ Vr: 10µA @ 100V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBP
  • Supplier Device Package: KBP
パッケージ: 4-SIP, KBP
在庫3,312
Standard
100V
2A
1.1V @ 2A
10µA @ 100V
-50°C ~ 150°C (TJ)
Through Hole
4-SIP, KBP
KBP
KBP201
GeneSiC Semiconductor

DIODE BRIDGE 50V 2A KBP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
  • Current - Reverse Leakage @ Vr: 10µA @ 50V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBP
  • Supplier Device Package: KBP
パッケージ: 4-SIP, KBP
在庫6,944
Standard
50V
2A
1.1V @ 2A
10µA @ 50V
-50°C ~ 150°C (TJ)
Through Hole
4-SIP, KBP
KBP
hot 2W10M
GeneSiC Semiconductor

DIODE BRIDGE 1000V 2A WOM

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
  • Current - Reverse Leakage @ Vr: 10µA @ 1000V
  • Operating Temperature: -65°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Circular, WOM
  • Supplier Device Package: WOM
パッケージ: 4-Circular, WOM
在庫54,360
Standard
1000V
2A
1.1V @ 2A
10µA @ 1000V
-65°C ~ 125°C (TJ)
Through Hole
4-Circular, WOM
WOM
hot 2W08M
GeneSiC Semiconductor

DIODE BRIDGE 800V 2A WOM

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
  • Current - Reverse Leakage @ Vr: 10µA @ 800V
  • Operating Temperature: -65°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Circular, WOM
  • Supplier Device Package: WOM
パッケージ: 4-Circular, WOM
在庫143,784
Standard
800V
2A
1.1V @ 2A
10µA @ 800V
-65°C ~ 125°C (TJ)
Through Hole
4-Circular, WOM
WOM
hot 2W06M
GeneSiC Semiconductor

DIODE BRIDGE 600V 2A WOM

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: -65°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Circular, WOM
  • Supplier Device Package: WOM
パッケージ: 4-Circular, WOM
在庫186,816
Standard
600V
2A
1.1V @ 2A
10µA @ 600V
-65°C ~ 125°C (TJ)
Through Hole
4-Circular, WOM
WOM
hot 2W04M
GeneSiC Semiconductor

DIODE BRIDGE 400V 2A WOM

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Operating Temperature: -65°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Circular, WOM
  • Supplier Device Package: WOM
パッケージ: 4-Circular, WOM
在庫4,656
Standard
400V
2A
1.1V @ 2A
10µA @ 400V
-65°C ~ 125°C (TJ)
Through Hole
4-Circular, WOM
WOM
hot 2W02M
GeneSiC Semiconductor

DIODE BRIDGE 200V 2A WOM

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Operating Temperature: -65°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Circular, WOM
  • Supplier Device Package: WOM
パッケージ: 4-Circular, WOM
在庫276,900
Standard
200V
2A
1.1V @ 2A
10µA @ 200V
-65°C ~ 125°C (TJ)
Through Hole
4-Circular, WOM
WOM
hot 2W01M
GeneSiC Semiconductor

DIODE BRIDGE 100V 2A WOM

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
  • Current - Reverse Leakage @ Vr: 10µA @ 100V
  • Operating Temperature: -65°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Circular, WOM
  • Supplier Device Package: WOM
パッケージ: 4-Circular, WOM
在庫154,128
Standard
100V
2A
1.1V @ 2A
10µA @ 100V
-65°C ~ 125°C (TJ)
Through Hole
4-Circular, WOM
WOM
2W005M
GeneSiC Semiconductor

DIODE BRIDGE 50V 2A WOM

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
  • Current - Reverse Leakage @ Vr: 10µA @ 50V
  • Operating Temperature: -65°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Circular, WOM
  • Supplier Device Package: WOM
パッケージ: 4-Circular, WOM
在庫5,520
Standard
50V
2A
1.1V @ 2A
10µA @ 50V
-65°C ~ 125°C (TJ)
Through Hole
4-Circular, WOM
WOM
hot DB157G
GeneSiC Semiconductor

DIODE BRIDGE 1000V 1.5A DB

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-EDIP (0.321", 8.15mm)
  • Supplier Device Package: DB
パッケージ: 4-EDIP (0.321", 8.15mm)
在庫6,480
Standard
1000V
1.5A
1.1V @ 1.5A
5µA @ 1000V
-55°C ~ 150°C (TJ)
Through Hole
4-EDIP (0.321", 8.15mm)
DB
hot DB156G
GeneSiC Semiconductor

DIODE BRIDGE 800V 1.5A DB

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-EDIP (0.321", 8.15mm)
  • Supplier Device Package: DB
パッケージ: 4-EDIP (0.321", 8.15mm)
在庫18,816
Standard
800V
1.5A
1.1V @ 1.5A
5µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-EDIP (0.321", 8.15mm)
DB
hot DB155G
GeneSiC Semiconductor

DIODE BRIDGE 600V 1.5A DB

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-EDIP (0.321", 8.15mm)
  • Supplier Device Package: DB
パッケージ: 4-EDIP (0.321", 8.15mm)
在庫7,616
Standard
600V
1.5A
1.1V @ 1.5A
5µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-EDIP (0.321", 8.15mm)
DB
DB154G
GeneSiC Semiconductor

DIODE BRIDGE 400V 1.5A DB

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-EDIP (0.321", 8.15mm)
  • Supplier Device Package: DB
パッケージ: 4-EDIP (0.321", 8.15mm)
在庫6,128
Standard
400V
1.5A
1.1V @ 1.5A
5µA @ 400V
-55°C ~ 150°C (TJ)
Through Hole
4-EDIP (0.321", 8.15mm)
DB