ページ 3 - GeneSiC Semiconductor 製品 - ダイオード - ブリッジ整流器

部品番号	メーカ	説明	パッケージ	在庫	Technology	Voltage - Peak Reverse (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
DB153G	GeneSiC Semiconductor	DIODE BRIDGE 200V 1.5A DB Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 200V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A Current - Reverse Leakage @ Vr: 5µA @ 200V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-EDIP (0.321", 8.15mm) Supplier Device Package: DB	パッケージ: 4-EDIP (0.321", 8.15mm)	在庫7,152	Standard	200V	1.5A	1.1V @ 1.5A	5µA @ 200V	-55°C ~ 150°C (TJ)	Through Hole	4-EDIP (0.321", 8.15mm)	DB
DB152G	GeneSiC Semiconductor	DIODE BRIDGE 100V 1.5A DB Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 100V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A Current - Reverse Leakage @ Vr: 5µA @ 100V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-EDIP (0.321", 8.15mm) Supplier Device Package: DB	パッケージ: 4-EDIP (0.321", 8.15mm)	在庫2,464	Standard	100V	1.5A	1.1V @ 1.5A	5µA @ 100V	-55°C ~ 150°C (TJ)	Through Hole	4-EDIP (0.321", 8.15mm)	DB
DB151G	GeneSiC Semiconductor	DIODE BRIDGE 50V 1.5A DB Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 50V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A Current - Reverse Leakage @ Vr: 5µA @ 50V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-EDIP (0.321", 8.15mm) Supplier Device Package: DB	パッケージ: 4-EDIP (0.321", 8.15mm)	在庫3,344	Standard	50V	1.5A	1.1V @ 1.5A	5µA @ 50V	-55°C ~ 150°C (TJ)	Through Hole	4-EDIP (0.321", 8.15mm)	DB
W005M	GeneSiC Semiconductor	DIODE BRIDGE 50V 1.5A WOM Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 50V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Current - Reverse Leakage @ Vr: 10µA @ 50V Operating Temperature: -65°C ~ 125°C (TJ) Mounting Type: Through Hole Package / Case: 4-Circular, WOM Supplier Device Package: WOM	パッケージ: 4-Circular, WOM	在庫7,824	Standard	50V	1.5A	1V @ 1A	10µA @ 50V	-65°C ~ 125°C (TJ)	Through Hole	4-Circular, WOM	WOM
DB107G	GeneSiC Semiconductor	DIODE BRIDGE 1000V 1A DB Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1000V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Current - Reverse Leakage @ Vr: 10µA @ 1000V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-EDIP (0.321", 8.15mm) Supplier Device Package: DB	パッケージ: 4-EDIP (0.321", 8.15mm)	在庫14,688	Standard	1000V	1A	1.1V @ 1A	10µA @ 1000V	-55°C ~ 150°C (TJ)	Through Hole	4-EDIP (0.321", 8.15mm)	DB
DB106G	GeneSiC Semiconductor	DIODE BRIDGE 800V 1A DB Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Current - Reverse Leakage @ Vr: 10µA @ 800V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-EDIP (0.321", 8.15mm) Supplier Device Package: DB	パッケージ: 4-EDIP (0.321", 8.15mm)	在庫4,704	Standard	800V	1A	1.1V @ 1A	10µA @ 800V	-55°C ~ 150°C (TJ)	Through Hole	4-EDIP (0.321", 8.15mm)	DB
DB105G	GeneSiC Semiconductor	DIODE BRIDGE 600V 1A DB Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Current - Reverse Leakage @ Vr: 10µA @ 600V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-EDIP (0.321", 8.15mm) Supplier Device Package: DB	パッケージ: 4-EDIP (0.321", 8.15mm)	在庫194,304	Standard	600V	1A	1.1V @ 1A	10µA @ 600V	-55°C ~ 150°C (TJ)	Through Hole	4-EDIP (0.321", 8.15mm)	DB
DB104G	GeneSiC Semiconductor	DIODE BRIDGE 400V 1A DB Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Current - Reverse Leakage @ Vr: 10µA @ 400V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-EDIP (0.321", 8.15mm) Supplier Device Package: DB	パッケージ: 4-EDIP (0.321", 8.15mm)	在庫56,748	Standard	400V	1A	1.1V @ 1A	10µA @ 400V	-55°C ~ 150°C (TJ)	Through Hole	4-EDIP (0.321", 8.15mm)	DB
DB102G	GeneSiC Semiconductor	DIODE BRIDGE 100V 1A DB Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Current - Reverse Leakage @ Vr: 10µA @ 100V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-EDIP (0.321", 8.15mm) Supplier Device Package: DB	パッケージ: 4-EDIP (0.321", 8.15mm)	在庫228,000	Standard	100V	1A	1.1V @ 1A	10µA @ 100V	-55°C ~ 150°C (TJ)	Through Hole	4-EDIP (0.321", 8.15mm)	DB
DB101G	GeneSiC Semiconductor	DIODE BRIDGE 50V 1A DB Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Current - Reverse Leakage @ Vr: 5µA @ 50V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-EDIP (0.321", 8.15mm) Supplier Device Package: DB	パッケージ: 4-EDIP (0.321", 8.15mm)	在庫7,032	Standard	50V	1A	1.1V @ 1A	5µA @ 50V	-55°C ~ 150°C (TJ)	Through Hole	4-EDIP (0.321", 8.15mm)	DB
W08M	GeneSiC Semiconductor	DIODE BRIDGE 800V 1.5A WOM Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Current - Reverse Leakage @ Vr: 5µA @ 800V Operating Temperature: -65°C ~ 125°C (TJ) Mounting Type: Through Hole Package / Case: 4-Circular, WOM Supplier Device Package: WOM	パッケージ: 4-Circular, WOM	在庫120,072	Standard	800V	1.5A	1V @ 1A	5µA @ 800V	-65°C ~ 125°C (TJ)	Through Hole	4-Circular, WOM	WOM
W06M	GeneSiC Semiconductor	DIODE BRIDGE 600V 1.5A WOM Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Current - Reverse Leakage @ Vr: 10µA @ 600V Operating Temperature: -65°C ~ 125°C (TJ) Mounting Type: Through Hole Package / Case: 4-Circular, WOM Supplier Device Package: WOM	パッケージ: 4-Circular, WOM	在庫15,888	Standard	600V	1.5A	1V @ 1A	10µA @ 600V	-65°C ~ 125°C (TJ)	Through Hole	4-Circular, WOM	WOM
W04M	GeneSiC Semiconductor	DIODE BRIDGE 400V 1.5A WOM Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 400V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Current - Reverse Leakage @ Vr: 10µA @ 400V Operating Temperature: -65°C ~ 125°C (TJ) Mounting Type: Through Hole Package / Case: 4-Circular, WOM Supplier Device Package: WOM	パッケージ: 4-Circular, WOM	在庫41,748	Standard	400V	1.5A	1V @ 1A	10µA @ 400V	-65°C ~ 125°C (TJ)	Through Hole	4-Circular, WOM	WOM
KBU8A	GeneSiC Semiconductor	DIODE BRIDGE 50V 8A KBU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 50V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1V @ 8A Current - Reverse Leakage @ Vr: 10µA @ 50V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, KBU Supplier Device Package: KBU	パッケージ: 4-SIP, KBU	在庫10,020	Standard	50V	8A	1V @ 8A	10µA @ 50V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, KBU	KBU
KBU8J	GeneSiC Semiconductor	DIODE BRIDGE 600V 8A KBU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1V @ 8A Current - Reverse Leakage @ Vr: 10µA @ 600V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, KBU Supplier Device Package: KBU	パッケージ: 4-SIP, KBU	在庫3,696	Standard	600V	8A	1V @ 8A	10µA @ 600V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, KBU	KBU
W10M	GeneSiC Semiconductor	DIODE BRIDGE 1000V 1.5A WOM Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1000V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Current - Reverse Leakage @ Vr: 10µA @ 1000V Operating Temperature: -65°C ~ 125°C (TJ) Mounting Type: Through Hole Package / Case: 4-Circular, WOM Supplier Device Package: WOM	パッケージ: 4-Circular, WOM	在庫404,940	Standard	1000V	1.5A	1V @ 1A	10µA @ 1000V	-65°C ~ 125°C (TJ)	Through Hole	4-Circular, WOM	WOM
GBU8J	GeneSiC Semiconductor	DIODE BRIDGE 600V 8A GBU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A Current - Reverse Leakage @ Vr: 5µA @ 600V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBU Supplier Device Package: GBU	パッケージ: 4-SIP, GBU	在庫9,516	Standard	600V	8A	1.1V @ 8A	5µA @ 600V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GBU8D	GeneSiC Semiconductor	DIODE BRIDGE 200V 8A GBU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 200V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A Current - Reverse Leakage @ Vr: 5µA @ 200V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBU Supplier Device Package: GBU	パッケージ: 4-SIP, GBU	在庫12,804	Standard	200V	8A	1.1V @ 8A	5µA @ 200V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GBU8G	GeneSiC Semiconductor	DIODE BRIDGE 400V 8A GBU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 400V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A Current - Reverse Leakage @ Vr: 5µA @ 400V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBU Supplier Device Package: GBU	パッケージ: 4-SIP, GBU	在庫23,568	Standard	400V	8A	1.1V @ 8A	5µA @ 400V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GBU8B	GeneSiC Semiconductor	DIODE BRIDGE 100V 8A GBU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 100V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A Current - Reverse Leakage @ Vr: 5µA @ 100V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBU Supplier Device Package: GBU	パッケージ: 4-SIP, GBU	在庫4,784	Standard	100V	8A	1.1V @ 8A	5µA @ 100V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GBU6J	GeneSiC Semiconductor	DIODE BRIDGE 600V 6A GBU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 6A Current - Reverse Leakage @ Vr: 5µA @ 600V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBU Supplier Device Package: GBU	パッケージ: 4-SIP, GBU	在庫8,460	Standard	600V	6A	1.1V @ 6A	5µA @ 600V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GBU6B	GeneSiC Semiconductor	DIODE BRIDGE 100V 6A GBU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 100V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 6A Current - Reverse Leakage @ Vr: 5µA @ 100V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBU Supplier Device Package: GBU	パッケージ: 4-SIP, GBU	在庫22,404	Standard	100V	6A	1.1V @ 6A	5µA @ 100V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
KBU6B	GeneSiC Semiconductor	DIODE BRIDGE 100V 6A KBU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 100V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1V @ 6A Current - Reverse Leakage @ Vr: 10µA @ 50V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, KBU Supplier Device Package: KBU	パッケージ: 4-SIP, KBU	在庫15,996	Standard	100V	6A	1V @ 6A	10µA @ 50V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, KBU	KBU
KBU6M	GeneSiC Semiconductor	DIODE BRIDGE 1000V 6A KBU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1000V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1V @ 6A Current - Reverse Leakage @ Vr: 10µA @ 1000V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, KBU Supplier Device Package: KBU	パッケージ: 4-SIP, KBU	在庫16,944	Standard	1000V	6A	1V @ 6A	10µA @ 1000V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, KBU	KBU
GBU4G	GeneSiC Semiconductor	DIODE BRIDGE 400V 4A GBU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 400V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A Current - Reverse Leakage @ Vr: 5µA @ 400V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBU Supplier Device Package: GBU	パッケージ: 4-SIP, GBU	在庫26,616	Standard	400V	4A	1.1V @ 4A	5µA @ 400V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GBU4B	GeneSiC Semiconductor	DIODE BRIDGE 100V 4A GBU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 100V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A Current - Reverse Leakage @ Vr: 5µA @ 100V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBU Supplier Device Package: GBU	パッケージ: 4-SIP, GBU	在庫17,016	Standard	100V	4A	1.1V @ 4A	5µA @ 100V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GBU10D	GeneSiC Semiconductor	DIODE BRIDGE 200V 10A GBU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 200V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 10A Current - Reverse Leakage @ Vr: 5µA @ 200V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBU Supplier Device Package: GBU	パッケージ: 4-SIP, GBU	在庫21,624	Standard	200V	10A	1.1V @ 10A	5µA @ 200V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GBL005	GeneSiC Semiconductor	DIODE BRIDGE 50V 4A GBL Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 50V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A Current - Reverse Leakage @ Vr: 5µA @ 50V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBL Supplier Device Package: GBL	パッケージ: 4-SIP, GBL	在庫19,284	Standard	50V	4A	1.1V @ 4A	5µA @ 50V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBL	GBL
GBU4A	GeneSiC Semiconductor	DIODE BRIDGE 50V 4A GBU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 50V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A Current - Reverse Leakage @ Vr: 5µA @ 50V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBU Supplier Device Package: GBU	パッケージ: 4-SIP, GBU	在庫9,984	Standard	50V	4A	1.1V @ 4A	5µA @ 50V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
DB103G	GeneSiC Semiconductor	DIODE BRIDGE 200V 1A DB Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Current - Reverse Leakage @ Vr: 10µA @ 200V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-EDIP (0.321", 8.15mm) Supplier Device Package: DB	パッケージ: 4-EDIP (0.321", 8.15mm)	在庫59,328	Standard	200V	1A	1.1V @ 1A	10µA @ 200V	-55°C ~ 150°C (TJ)	Through Hole	4-EDIP (0.321", 8.15mm)	DB

DB153G

GeneSiC Semiconductor

DIODE BRIDGE 200V 1.5A DB

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 200V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
Current - Reverse Leakage @ Vr: 5µA @ 200V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-EDIP (0.321", 8.15mm)
Supplier Device Package: DB

パッケージ: 4-EDIP (0.321", 8.15mm)

在庫7,152

Standard

200V

1.5A

1.1V @ 1.5A

5µA @ 200V

-55°C ~ 150°C (TJ)

Through Hole

4-EDIP (0.321", 8.15mm)

DB

DB152G

GeneSiC Semiconductor

DIODE BRIDGE 100V 1.5A DB

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 100V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
Current - Reverse Leakage @ Vr: 5µA @ 100V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-EDIP (0.321", 8.15mm)
Supplier Device Package: DB

パッケージ: 4-EDIP (0.321", 8.15mm)

在庫2,464

Standard

100V

1.5A

1.1V @ 1.5A

5µA @ 100V

-55°C ~ 150°C (TJ)

Through Hole

4-EDIP (0.321", 8.15mm)

DB

DB151G

GeneSiC Semiconductor

DIODE BRIDGE 50V 1.5A DB

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 50V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
Current - Reverse Leakage @ Vr: 5µA @ 50V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-EDIP (0.321", 8.15mm)
Supplier Device Package: DB

パッケージ: 4-EDIP (0.321", 8.15mm)

在庫3,344

Standard

50V

1.5A

1.1V @ 1.5A

5µA @ 50V

-55°C ~ 150°C (TJ)

Through Hole

4-EDIP (0.321", 8.15mm)

DB

W005M

GeneSiC Semiconductor

DIODE BRIDGE 50V 1.5A WOM

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 50V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Current - Reverse Leakage @ Vr: 10µA @ 50V
Operating Temperature: -65°C ~ 125°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-Circular, WOM
Supplier Device Package: WOM

パッケージ: 4-Circular, WOM

在庫7,824

Standard

50V

1.5A

1V @ 1A

10µA @ 50V

-65°C ~ 125°C (TJ)

Through Hole

4-Circular, WOM

WOM

DB107G

GeneSiC Semiconductor

DIODE BRIDGE 1000V 1A DB

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1000V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Current - Reverse Leakage @ Vr: 10µA @ 1000V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-EDIP (0.321", 8.15mm)
Supplier Device Package: DB

パッケージ: 4-EDIP (0.321", 8.15mm)

在庫14,688

Standard

1000V

1A

1.1V @ 1A

10µA @ 1000V

-55°C ~ 150°C (TJ)

Through Hole

4-EDIP (0.321", 8.15mm)

DB

DB106G

GeneSiC Semiconductor

DIODE BRIDGE 800V 1A DB

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Current - Reverse Leakage @ Vr: 10µA @ 800V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-EDIP (0.321", 8.15mm)
Supplier Device Package: DB

パッケージ: 4-EDIP (0.321", 8.15mm)

在庫4,704

Standard

800V

1A

1.1V @ 1A

10µA @ 800V

-55°C ~ 150°C (TJ)

Through Hole

4-EDIP (0.321", 8.15mm)

DB

DB105G

GeneSiC Semiconductor

DIODE BRIDGE 600V 1A DB

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Current - Reverse Leakage @ Vr: 10µA @ 600V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-EDIP (0.321", 8.15mm)
Supplier Device Package: DB

パッケージ: 4-EDIP (0.321", 8.15mm)

在庫194,304

Standard

600V

1A

1.1V @ 1A

10µA @ 600V

-55°C ~ 150°C (TJ)

Through Hole

4-EDIP (0.321", 8.15mm)

DB

DB104G

GeneSiC Semiconductor

DIODE BRIDGE 400V 1A DB

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Current - Reverse Leakage @ Vr: 10µA @ 400V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-EDIP (0.321", 8.15mm)
Supplier Device Package: DB

パッケージ: 4-EDIP (0.321", 8.15mm)

在庫56,748

Standard

400V

1A

1.1V @ 1A

10µA @ 400V

-55°C ~ 150°C (TJ)

Through Hole

4-EDIP (0.321", 8.15mm)

DB

DB102G

GeneSiC Semiconductor

DIODE BRIDGE 100V 1A DB

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Current - Reverse Leakage @ Vr: 10µA @ 100V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-EDIP (0.321", 8.15mm)
Supplier Device Package: DB

パッケージ: 4-EDIP (0.321", 8.15mm)

在庫228,000

Standard

100V

1A

1.1V @ 1A

10µA @ 100V

-55°C ~ 150°C (TJ)

Through Hole

4-EDIP (0.321", 8.15mm)

DB

DB101G

GeneSiC Semiconductor

DIODE BRIDGE 50V 1A DB

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Current - Reverse Leakage @ Vr: 5µA @ 50V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-EDIP (0.321", 8.15mm)
Supplier Device Package: DB

パッケージ: 4-EDIP (0.321", 8.15mm)

在庫7,032

Standard

50V

1A

1.1V @ 1A

5µA @ 50V

-55°C ~ 150°C (TJ)

Through Hole

4-EDIP (0.321", 8.15mm)

DB

W08M

GeneSiC Semiconductor

DIODE BRIDGE 800V 1.5A WOM

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Current - Reverse Leakage @ Vr: 5µA @ 800V
Operating Temperature: -65°C ~ 125°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-Circular, WOM
Supplier Device Package: WOM

パッケージ: 4-Circular, WOM

在庫120,072

Standard

800V

1.5A

1V @ 1A

5µA @ 800V

-65°C ~ 125°C (TJ)

Through Hole

4-Circular, WOM

WOM

W06M

GeneSiC Semiconductor

DIODE BRIDGE 600V 1.5A WOM

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Current - Reverse Leakage @ Vr: 10µA @ 600V
Operating Temperature: -65°C ~ 125°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-Circular, WOM
Supplier Device Package: WOM

パッケージ: 4-Circular, WOM

在庫15,888

Standard

600V

1.5A

1V @ 1A

10µA @ 600V

-65°C ~ 125°C (TJ)

Through Hole

4-Circular, WOM

WOM

W04M

GeneSiC Semiconductor

DIODE BRIDGE 400V 1.5A WOM

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 400V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Current - Reverse Leakage @ Vr: 10µA @ 400V
Operating Temperature: -65°C ~ 125°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-Circular, WOM
Supplier Device Package: WOM

パッケージ: 4-Circular, WOM

在庫41,748

Standard

400V

1.5A

1V @ 1A

10µA @ 400V

-65°C ~ 125°C (TJ)

Through Hole

4-Circular, WOM

WOM

KBU8A

GeneSiC Semiconductor

DIODE BRIDGE 50V 8A KBU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 50V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1V @ 8A
Current - Reverse Leakage @ Vr: 10µA @ 50V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, KBU
Supplier Device Package: KBU

パッケージ: 4-SIP, KBU

在庫10,020

Standard

50V

8A

1V @ 8A

10µA @ 50V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, KBU

KBU

KBU8J

GeneSiC Semiconductor

DIODE BRIDGE 600V 8A KBU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1V @ 8A
Current - Reverse Leakage @ Vr: 10µA @ 600V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, KBU
Supplier Device Package: KBU

パッケージ: 4-SIP, KBU

在庫3,696

Standard

600V

8A

1V @ 8A

10µA @ 600V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, KBU

KBU

W10M

GeneSiC Semiconductor

DIODE BRIDGE 1000V 1.5A WOM

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1000V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Current - Reverse Leakage @ Vr: 10µA @ 1000V
Operating Temperature: -65°C ~ 125°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-Circular, WOM
Supplier Device Package: WOM

パッケージ: 4-Circular, WOM

在庫404,940

Standard

1000V

1.5A

1V @ 1A

10µA @ 1000V

-65°C ~ 125°C (TJ)

Through Hole

4-Circular, WOM

WOM

GBU8J

GeneSiC Semiconductor

DIODE BRIDGE 600V 8A GBU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
Current - Reverse Leakage @ Vr: 5µA @ 600V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Supplier Device Package: GBU

パッケージ: 4-SIP, GBU

在庫9,516

Standard

600V

8A

1.1V @ 8A

5µA @ 600V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBU

GBU

GBU8D

GeneSiC Semiconductor

DIODE BRIDGE 200V 8A GBU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 200V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
Current - Reverse Leakage @ Vr: 5µA @ 200V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Supplier Device Package: GBU

パッケージ: 4-SIP, GBU

在庫12,804

Standard

200V

8A

1.1V @ 8A

5µA @ 200V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBU

GBU

GBU8G

GeneSiC Semiconductor

DIODE BRIDGE 400V 8A GBU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 400V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
Current - Reverse Leakage @ Vr: 5µA @ 400V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Supplier Device Package: GBU

パッケージ: 4-SIP, GBU

在庫23,568

Standard

400V

8A

1.1V @ 8A

5µA @ 400V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBU

GBU

GBU8B

GeneSiC Semiconductor

DIODE BRIDGE 100V 8A GBU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 100V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
Current - Reverse Leakage @ Vr: 5µA @ 100V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Supplier Device Package: GBU

パッケージ: 4-SIP, GBU

在庫4,784

Standard

100V

8A

1.1V @ 8A

5µA @ 100V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBU

GBU

GBU6J

GeneSiC Semiconductor

DIODE BRIDGE 600V 6A GBU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 6A
Current - Reverse Leakage @ Vr: 5µA @ 600V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Supplier Device Package: GBU

パッケージ: 4-SIP, GBU

在庫8,460

Standard

600V

6A

1.1V @ 6A

5µA @ 600V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBU

GBU

GBU6B

GeneSiC Semiconductor

DIODE BRIDGE 100V 6A GBU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 100V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 6A
Current - Reverse Leakage @ Vr: 5µA @ 100V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Supplier Device Package: GBU

パッケージ: 4-SIP, GBU

在庫22,404

Standard

100V

6A

1.1V @ 6A

5µA @ 100V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBU

GBU

KBU6B

GeneSiC Semiconductor

DIODE BRIDGE 100V 6A KBU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 100V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1V @ 6A
Current - Reverse Leakage @ Vr: 10µA @ 50V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, KBU
Supplier Device Package: KBU

パッケージ: 4-SIP, KBU

在庫15,996

Standard

100V

6A

1V @ 6A

10µA @ 50V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, KBU

KBU

KBU6M

GeneSiC Semiconductor

DIODE BRIDGE 1000V 6A KBU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1000V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1V @ 6A
Current - Reverse Leakage @ Vr: 10µA @ 1000V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, KBU
Supplier Device Package: KBU

パッケージ: 4-SIP, KBU

在庫16,944

Standard

1000V

6A

1V @ 6A

10µA @ 1000V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, KBU

KBU

GBU4G

GeneSiC Semiconductor

DIODE BRIDGE 400V 4A GBU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 400V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
Current - Reverse Leakage @ Vr: 5µA @ 400V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Supplier Device Package: GBU

パッケージ: 4-SIP, GBU

在庫26,616

Standard

400V

4A

1.1V @ 4A

5µA @ 400V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBU

GBU

GBU4B

GeneSiC Semiconductor

DIODE BRIDGE 100V 4A GBU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 100V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
Current - Reverse Leakage @ Vr: 5µA @ 100V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Supplier Device Package: GBU

パッケージ: 4-SIP, GBU

在庫17,016

Standard

100V

4A

1.1V @ 4A

5µA @ 100V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBU

GBU

GBU10D

GeneSiC Semiconductor

DIODE BRIDGE 200V 10A GBU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 200V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 10A
Current - Reverse Leakage @ Vr: 5µA @ 200V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Supplier Device Package: GBU

パッケージ: 4-SIP, GBU

在庫21,624

Standard

200V

10A

1.1V @ 10A

5µA @ 200V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBU

GBU

GBL005

GeneSiC Semiconductor

DIODE BRIDGE 50V 4A GBL

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 50V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
Current - Reverse Leakage @ Vr: 5µA @ 50V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBL
Supplier Device Package: GBL

パッケージ: 4-SIP, GBL

在庫19,284

Standard

50V

4A

1.1V @ 4A

5µA @ 50V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBL

GBL

GBU4A

GeneSiC Semiconductor

DIODE BRIDGE 50V 4A GBU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 50V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
Current - Reverse Leakage @ Vr: 5µA @ 50V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Supplier Device Package: GBU

パッケージ: 4-SIP, GBU

在庫9,984

Standard

50V

4A

1.1V @ 4A

5µA @ 50V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBU

GBU

DB103G

GeneSiC Semiconductor

DIODE BRIDGE 200V 1A DB

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Current - Reverse Leakage @ Vr: 10µA @ 200V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-EDIP (0.321", 8.15mm)
Supplier Device Package: DB

パッケージ: 4-EDIP (0.321", 8.15mm)

在庫59,328

Standard

200V

1A

1.1V @ 1A

10µA @ 200V

-55°C ~ 150°C (TJ)

Through Hole

4-EDIP (0.321", 8.15mm)

DB