Infineon Technologies 製品

IKW30N60T

Infineon Technologies

IGBT 600V 60A 187W TO247-3

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 60A
• Current - Collector Pulsed (Icm): 90A
• Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 30A
• Power - Max: 187W
• Switching Energy: 1.46mJ
• Input Type: Standard
• Gate Charge: 167nC
• Td (on/off) @ 25°C: 23ns/254ns
• Test Condition: 400V, 30A, 10.6 Ohm, 15V
• Reverse Recovery Time (trr): 143ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3

パッケージ: TO-247-3

IRF7220TRPBF

Infineon Technologies

MOSFET P-CH 14V 11A 8-SOIC

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 14V
• Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 600mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 125nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 8075pF @ 10V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta)
• Rds On (Max) @ Id, Vgs: 12 mOhm @ 11A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

パッケージ: 8-SOIC (0.154", 3.90mm Width)

IRF3709ZSTRR

Infineon Technologies

MOSFET N-CH 30V 87A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.25V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 2130pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 79W (Tc)
• Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 21A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRFHM3911TRPBF

Infineon Technologies

MOSFET N-CH 100V 10A PQFN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), 20A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 35µA
• Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.8W (Ta), 29W (Tc)
• Rds On (Max) @ Id, Vgs: 115 mOhm @ 6.3A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-PQFN (3x3)
• Package / Case: 8-PowerTDFN

パッケージ: 8-PowerTDFN

IPD80R750P7ATMA1

Infineon Technologies

MOSFET N-CH 800V COOLMOS TO252-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 800V
• Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 140µA
• Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 500V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 51W (Tc)
• Rds On (Max) @ Id, Vgs: 750 mOhm @ 2.7A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO252-3
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

IPA50R520CPXKSA1

Infineon Technologies

MOSFET N-CH 500V 7.1A TO220-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 66W (Tc)
• Rds On (Max) @ Id, Vgs: 520 mOhm @ 3.8A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220FP
• Package / Case: TO-220-3 Full Pack

パッケージ: TO-220-3 Full Pack

IRFH5304TRPBF

Infineon Technologies

MOSFET N-CH 30V 22A 8VQFN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 79A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.35V @ 50µA
• Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2360pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.6W (Ta), 46W (Tc)
• Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 47A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PQFN (5x6)
• Package / Case: 8-PowerVDFN

パッケージ: 8-PowerVDFN

IRL2505PBF

Infineon Technologies

MOSFET N-CH 55V 104A TO-220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 130nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 25V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 200W (Tc)
• Rds On (Max) @ Id, Vgs: 8 mOhm @ 54A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

パッケージ: TO-220-3

BCR158WH6327XTSA1

Infineon Technologies

TRANS PREBIAS PNP 250MW SOT323-3

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 2.2k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 200MHz
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: PG-SOT323-3

パッケージ: SC-70, SOT-323

IRAM136-1060A

Infineon Technologies

IC MOD PWR HYBRID 600V 10A MOTOR

• Type: IGBT
• Configuration: 3 Phase
• Current: 10A
• Voltage: 600V
• Voltage - Isolation: 2000Vrms
• Package / Case: 29-PowerSSIP Module, 21 Leads, Formed Leads

パッケージ: 29-PowerSSIP Module, 21 Leads, Formed Leads

BBY5202LE6816XTMA1

Infineon Technologies

DIODE TUNING 7V 20MA TSLP-2

• Capacitance @ Vr, F: 1.45pF @ 4V, 1MHz
• Capacitance Ratio: 2.1
• Capacitance Ratio Condition: C1/C4
• Voltage - Peak Reverse (Max): 7V
• Diode Type: Single
• Q @ Vr, F: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-882
• Supplier Device Package: PG-TSLP-2

パッケージ: SOD-882

BAT 64 E6327

Infineon Technologies

DIODE SCHOTTKY 40V 120MA SOT23-3

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io): 120mA
• Voltage - Forward (Vf) (Max) @ If: 750mV @ 100mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 5ns
• Current - Reverse Leakage @ Vr: 2µA @ 30V
• Capacitance @ Vr, F: 6pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: PG-SOT23-3
• Operating Temperature - Junction: 150°C (Max)

パッケージ: TO-236-3, SC-59, SOT-23-3

TLE4295GV26HTSA1

Infineon Technologies

IC REG LINEAR 2.6V 30MA SCT595-5

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 45V
• Voltage - Output (Min/Fixed): 2.6V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.4V @ 20mA
• Current - Output: 30mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 200µA ~ 4mA
• PSRR: 60dB (100Hz)
• Control Features: Power Fail
• Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: 6-SMD (5 Leads), Gull Wing
• Supplier Device Package: PG-SCT595-5

パッケージ: 6-SMD (5 Leads), Gull Wing

AUIRS2124S

Infineon Technologies

IC DRIVER HIGH SIDE 600V 8SOIC

• Driven Configuration: High-Side
• Channel Type: Single
• Number of Drivers: 1
• Gate Type: IGBT, N-Channel MOSFET
• Voltage - Supply: 10 V ~ 20 V
• Logic Voltage - VIL, VIH: -
• Current - Peak Output (Source, Sink): 500mA, 500mA
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): 600V
• Rise / Fall Time (Typ): 80ns, 80ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

パッケージ: 8-SOIC (0.154", 3.90mm Width)

PEF 2026 T-S V1.1

Infineon Technologies

IC NETWORK TERMINATOR PDSO-20

• Function: High Voltage Power Controller
• Interface: ISDN
• Number of Circuits: 1
• Voltage - Supply: -
• Current - Supply: 700µA
• Power (Watts): -
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 20-SOIC (0.433", 11.00mm Width) Exposed Pad
• Supplier Device Package: P-DSO-20

パッケージ: 20-SOIC (0.433", 11.00mm Width) Exposed Pad

PXB4220E-V33

Infineon Technologies

IC CHIPSET 8 E1/T1 LINE 256-BGA

• Applications: -
• Interface: -
• Voltage - Supply: 3.15 V ~ 3.45 V
• Package / Case: 256-BGA
• Supplier Device Package: 256-BGA (27x27)
• Mounting Type: Surface Mount

パッケージ: 256-BGA

TLE9871QXA20XUMA2

Infineon Technologies

IC SOC MOTOR DRIVER 48VQFN

• Applications: Automotive
• Core Processor: ARM? Cortex?-M3
• Program Memory Type: FLASH (36 kB)
• Controller Series: -
• RAM Size: 3K x 8
• Interface: SSI, UART
• Number of I/O: 10
• Voltage - Supply: 5.5 V ~ 28 V
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

TLV493DA1B6HTSA2

Infineon Technologies

3D MAGNETIC SENSOR

• For Measuring: Linear, Rotary Position
• Technology: Hall Effect
• Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
• Linear Range: -
• Output: I2C
• Output Signal: -
• Actuator Type: External Magnet Not Included
• Linearity: -
• Resistance: -
• Resistance Tolerance: -
• Voltage - Supply: 2.7 V ~ 3.5 V
• Mounting Type: Surface Mount
• Termination Style: SMD (SMT) Tab
• Operating Temperature: -40°C ~ 125°C

パッケージ: -

TLE4998S3XALA1

Infineon Technologies

SENSOR LINEAR SENT SM8

• Type: Linear
• Technology: Hall Effect
• Axis: Single
• Output Type: SENT
• Sensing Range: ±50mT, ±100mT, ±200mT
• Voltage - Supply: 4.5 V ~ 5.5 V
• Current - Supply (Max): 8mA
• Current - Output (Max): 5mA
• Resolution: 16 b
• Bandwidth: Programmable
• Operating Temperature: -40°C ~ 125°C (TJ)
• Features: Selectable Scale, Temperature Compensated
• Package / Case: SOT-223-8
• Supplier Device Package: SM8

パッケージ: SOT-223-8

TLI4970D025T5XUMA1

Infineon Technologies

IC CURRENT SENSOR 8TISON

• For Measuring: AC/DC
• Sensor Type: Hall Effect, Differential
• Current - Sensing: 25A
• Number of Channels: 1
• Output: SPI
• Sensitivity: -
• Frequency: DC ~ 18kHz
• Linearity: ±1.6%
• Accuracy: ±0.05%
• Voltage - Supply: 3.1 V ~ 3.5 V
• Response Time: 57µs
• Current - Supply (Max): 20mA
• Operating Temperature: -40°C ~ 85°C
• Polarization: Unidirectional
• Mounting Type: Surface Mount
• Package / Case: 8-SMD Module

パッケージ: 8-SMD Module

BGS14PN10E6327XTSA1

Infineon Technologies

CMOS SWITCH

• Frequency - Lower: 500MHz
• Frequency - Upper: 6GHz
• Isolation @ Frequency: 18dB @ 6GHz (typ)
• Insertion Loss @ Frequency: 1.2dB @ 6GHz
• IIP3: 73dBm (typ)
• Topology: -
• Circuit: SP4T
• P1dB: -
• Features: -
• Impedance: 50 Ohm
• Operating Temperature: -40°C ~ 85°C
• Voltage - Supply: 1.8 V ~ 3.6 V
• RF Type: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

CHL8328-28CRT

Infineon Technologies

IC REGULATOR PG-VQFN-56-901

• Applications: Controller, DDR, Intel VR12, AMD SVI, PVI
• Voltage - Input: 3.3V
• Number of Outputs: 2
• Voltage - Output: -
• Operating Temperature: -20°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 56-VFQFN Exposed Pad
• Supplier Device Package: 56-VQFN (8x8)

パッケージ: 56-VFQFN Exposed Pad

BSC0588NSIATMA1

Infineon Technologies

BSC0588- N-CHANNEL POWER MOSFET

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

パッケージ: -

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CYPD5137-40LQXIT

Infineon Technologies

IC MCD CCG5C WIRED 40-QFN

• Applications: -
• Core Processor: -
• Program Memory Type: -
• Controller Series: -
• RAM Size: -
• Interface: -
• Number of I/O: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

FS300R17KE3BOSA1

Infineon Technologies

IGBT MOD 1700V 375A 1650W

• IGBT Type: Trench Field Stop
• Configuration: Full Bridge
• Voltage - Collector Emitter Breakdown (Max): 1700 V
• Current - Collector (Ic) (Max): 375 A
• Power - Max: 1650 W
• Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 300A
• Current - Collector Cutoff (Max): 3 mA
• Input Capacitance (Cies) @ Vce: 27 nF @ 25 V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

パッケージ: -

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S25HL01GTFABHM030

Infineon Technologies

IC FLASH 1GBIT SPI/QUAD 24FBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR (SLC)
• Memory Size: 1Gbit
• Memory Interface: SPI - Quad I/O, QPI
• Clock Frequency: 166 MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.7V ~ 3.6V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-VBGA
• Supplier Device Package: 24-FBGA (8x8)

パッケージ: -

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CY8C4149AZA-S598

Infineon Technologies

PSOC4 - GENERAL

• Core Processor: ARM® Cortex®-M0+
• Core Size: 32-Bit
• Speed: 48MHz
• Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
• Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, I2S, DMA, LCD, LVD, POR, PWM, SHA, Temp Sensor, TRNG, WDT
• Number of I/O: 84
• Program Memory Size: 384KB (384K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 32K x 8
• Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
• Data Converters: A/D 16x12b SAR
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-LQFP
• Supplier Device Package: 100-TQFP (14x14)

パッケージ: -

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CY9AF144NAPQC-G-JNE2

Infineon Technologies

MULTI-MARKET MCUS

• Core Processor: ARM® Cortex®-M3
• Core Size: 32-Bit
• Speed: 40MHz
• Connectivity: CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
• Peripherals: DMA, LVD, POR, PWM, WDT
• Number of I/O: 83
• Program Memory Size: 288KB (288K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 32K x 8
• Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
• Data Converters: A/D 24x12b SAR
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-BQFP
• Supplier Device Package: 100-QFP (14x20)

パッケージ: -

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IPT60R090CFD7XTMA1

Infineon Technologies

MOSFET N-CH 600V 28A 8HSOF

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 470µA
• Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1752 pF @ 400 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 160W (Tc)
• Rds On (Max) @ Id, Vgs: 90mOhm @ 9.3A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-HSOF-8-1
• Package / Case: 8-PowerSFN

パッケージ: -

IMIC37V01X6SA1

Infineon Technologies

INTELLIGENT POWER MODULE

• Type: -
• Configuration: -
• Current: -
• Voltage: -
• Voltage - Isolation: -
• Package / Case: -

パッケージ: -

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