Infineon Technologies 製品

AUIRGSL4062D1

Infineon Technologies

IGBT 600V 59A 246W TO-262

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 59A
• Current - Collector Pulsed (Icm): 72A
• Vce(on) (Max) @ Vge, Ic: 1.77V @ 15V, 24A
• Power - Max: 246W
• Switching Energy: 532µJ (on), 311µJ (off)
• Input Type: Standard
• Gate Charge: 77nC
• Td (on/off) @ 25°C: 19ns/90ns
• Test Condition: 400V, 24A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 102ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
• Supplier Device Package: TO-262

パッケージ: TO-262-3 Long Leads, I2Pak, TO-262AA

IRF3711PBF

Infineon Technologies

MOSFET N-CH 20V 110A TO-220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 2980pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.1W (Ta), 120W (Tc)
• Rds On (Max) @ Id, Vgs: 6 mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

パッケージ: TO-220-3

IRF3709ZL

Infineon Technologies

MOSFET N-CH 30V 87A TO-262

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.25V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 2130pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 79W (Tc)
• Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 21A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-262
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

パッケージ: TO-262-3 Long Leads, I2Pak, TO-262AA

IRF7453TR

Infineon Technologies

MOSFET N-CH 250V 2.2A 8-SOIC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 250V
• Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta)
• Rds On (Max) @ Id, Vgs: 230 mOhm @ 1.3A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

パッケージ: 8-SOIC (0.154", 3.90mm Width)

IRF7453

Infineon Technologies

MOSFET N-CH 250V 2.2A 8-SOIC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 250V
• Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta)
• Rds On (Max) @ Id, Vgs: 230 mOhm @ 1.3A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

パッケージ: 8-SOIC (0.154", 3.90mm Width)

IRF3706STRL

Infineon Technologies

MOSFET N-CH 20V 77A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 10V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 88W (Tc)
• Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

AUIRFS8407TRL

Infineon Technologies

MOSFET N-CH 40V 195A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 150µA
• Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 7330pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 230W (Tc)
• Rds On (Max) @ Id, Vgs: 1.8 mOhm @ 100A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IPN60R1K0CEATMA1

Infineon Technologies

CONSUMER

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

パッケージ: -

IPA80R1K4CEXKSA2

Infineon Technologies

MOSFET NCH 800V 3.9A TO220-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 800V
• Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.9V @ 240µA
• Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 31W (Tc)
• Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2.3A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220 Full Pack
• Package / Case: TO-220-3 Full Pack

パッケージ: TO-220-3 Full Pack

IRF6618TRPBF

Infineon Technologies

MOSFET N-CH 30V 30A DIRECTFET

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 170A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.35V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 65nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 5640pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
• Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 30A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DIRECTFET? MT
• Package / Case: DirectFET? Isometric MT

パッケージ: DirectFET? Isometric MT

IR3092MTR

Infineon Technologies

IC CONTROLLER 2PHASE 48-MLPQ

• Applications: VID Voltage Programmer
• Voltage - Input: -
• Voltage - Supply: 7.3 V ~ 21 V
• Current - Supply: 29mA
• Operating Temperature: 0°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 48-VFQFN Exposed Pad
• Supplier Device Package: 48-MLPQ (7x7)

パッケージ: 48-VFQFN Exposed Pad

IPS021

Infineon Technologies

IC MOSFET LS DRIVER 5A TO-220AB

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: Low Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 35V (Max)
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 1.8A
• Rds On (Typ): 130 mOhm
• Input Type: Non-Inverting
• Features: -
• Fault Protection: Current Limiting (Fixed), Over Temperature
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

パッケージ: TO-220-3

TLF35584QKVS1XUMA2

Infineon Technologies

DC/DC CONVERTER

• Motor Type - Stepper: -
• Motor Type - AC, DC: -
• Function: -
• Output Configuration: -
• Interface: -
• Technology: -
• Step Resolution: -
• Applications: -
• Current - Output: -
• Voltage - Supply: -
• Voltage - Load: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

XMC4104Q48K64ABXUMA1

Infineon Technologies

IC MCU 32BIT 48KB FLASH 48VQFN

• Core Processor: ARM? Cortex?-M4
• Core Size: 32-Bit
• Speed: 80MHz
• Connectivity: CAN, I2C, LIN, SPI, UART/USART, USB
• Peripherals: DMA, I2S, LED, POR, PWM, WDT
• Number of I/O: 21
• Program Memory Size: 64KB (64K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 20K x 8
• Voltage - Supply (Vcc/Vdd): 3.13 V ~ 3.63 V
• Data Converters: A/D 9x12b; D/A 2x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: -
• Package / Case: 48-VFQFN Exposed Pad
• Supplier Device Package: PG-VQFN-48-53

パッケージ: 48-VFQFN Exposed Pad

TLE9254VSKXUMA1

Infineon Technologies

IC TRANSCEIVER HALF 2/2 DSO-14

• Type: Transceiver
• Protocol: CANbus
• Number of Drivers/Receivers: 2/2
• Duplex: Half
• Receiver Hysteresis: 50 mV
• Data Rate: 5Mbps
• Voltage - Supply: 4.5V ~ 5.5V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 14-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: PG-DSO-14

パッケージ: -

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BTG70502EPLXUMA1

Infineon Technologies

PROFET

• Switch Type: General Purpose
• Number of Outputs: 2
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: -
• Voltage - Load: 2.7V ~ 28V
• Voltage - Supply (Vcc/Vdd): 2.7V ~ 28V
• Current - Output (Max): 3A
• Rds On (Typ): 50mOhm
• Input Type: Non-Inverting
• Features: Slew Rate Controlled
• Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Reverse Battery, Short Circuit, UVLO
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
• Supplier Device Package: PG-TSDSO-14

パッケージ: -

XDPS2201XUMA1

Infineon Technologies

XDP DIGITAL POWER HYBRID FLYBACK

• Output Type: Transistor Driver
• Function: Step-Up/Step-Down
• Output Configuration: Positive
• Topology: Flyback
• Number of Outputs: 1
• Output Phases: 1
• Voltage - Supply (Vcc/Vdd): 11V ~ 24V
• Frequency - Switching: -
• Duty Cycle (Max): -
• Synchronous Rectifier: No
• Clock Sync: No
• Serial Interfaces: -
• Control Features: Current Limit, Enable, Soft Start
• Operating Temperature: -40°C ~ 125°C (TJ)
• Package / Case: 14-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: PG-DSO-14

パッケージ: -

SIDC161D170HX1SA2

Infineon Technologies

DIODE GP 1.7KV 300A WAFER

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1700 V
• Current - Average Rectified (Io): 300A
• Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 300 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 27 µA @ 1700 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Sawn on foil
• Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: -

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IS26KS256S-DPBLE00TR

Infineon Technologies

INFINEON

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

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S29PL064J70BFW072

Infineon Technologies

IC FLASH 64MBIT PARALLEL 56FBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 64Mbit
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 70ns
• Access Time: 70 ns
• Voltage - Supply: 2.7V ~ 3.6V
• Operating Temperature: -25°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 56-VFBGA
• Supplier Device Package: 56-FBGA (9x7)

パッケージ: -

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CY8C4146LQS-S453

Infineon Technologies

IC MCU 32BIT 64KB FLASH 40QFN

• Core Processor: ARM® Cortex®-M0+
• Core Size: 32-Bit
• Speed: 48MHz
• Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
• Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, POR, PWM, Temp Sensor, WDT
• Number of I/O: 34
• Program Memory Size: 64KB (64K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 8K x 8
• Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
• Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount, Wettable Flank
• Package / Case: 40-UFQFN Exposed Pad
• Supplier Device Package: 40-QFN (6x6)

パッケージ: -

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BAT63-07WE6327

Infineon Technologies

MIXER DIODE, LOW BARRIER

• Diode Type: Schottky - 2 Independent
• Voltage - Peak Reverse (Max): 3V
• Current - Max: 100 mA
• Capacitance @ Vr, F: 0.85pF @ 0.2V, 1MHz
• Resistance @ If, F: -
• Power Dissipation (Max): 100 mW
• Operating Temperature: 150°C (TJ)
• Package / Case: SC-82A, SOT-343
• Supplier Device Package: PG-SOT343-4

パッケージ: -

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TT320N16SOFTIMHPSA1

Infineon Technologies

LT-BOND MODULE

• Structure: Series Connection - All SCRs
• Number of SCRs, Diodes: 2 SCRs
• Voltage - Off State: 1.6 kV
• Current - On State (It (AV)) (Max): 320 A
• Current - On State (It (RMS)) (Max): 520 A
• Voltage - Gate Trigger (Vgt) (Max): 2 V
• Current - Gate Trigger (Igt) (Max): 150 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 9500A @ 50Hz
• Current - Hold (Ih) (Max): 150 mA
• Operating Temperature: 130°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module

パッケージ: -

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ETD580N16P60HPSA1

Infineon Technologies

SCR MODULE 1.6KV 700A MODULE

• Structure: Series Connection - SCR/Diode
• Number of SCRs, Diodes: 1 SCR, 1 Diode
• Voltage - Off State: 1.6 kV
• Current - On State (It (AV)) (Max): 586 A
• Current - On State (It (RMS)) (Max): 700 A
• Voltage - Gate Trigger (Vgt) (Max): 2 V
• Current - Gate Trigger (Igt) (Max): 250 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 16500A @ 50Hz
• Current - Hold (Ih) (Max): 300 mA
• Operating Temperature: -40°C ~ 135°C (TC)
• Mounting Type: Chassis Mount
• Package / Case: Module

パッケージ: -

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IPC60R190P6X7SA1

Infineon Technologies

MOSFET N-CH

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

パッケージ: -

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IS26KL256S-DABLA100

Infineon Technologies

INFINEON

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: HyperFlash
• Memory Size: 256Mbit
• Memory Interface: HyperBus
• Clock Frequency: 100 MHz
• Write Cycle Time - Word, Page: -
• Access Time: 96 ns
• Voltage - Supply: 2.7V ~ 3.6V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-VBGA
• Supplier Device Package: 24-VFBGA (6x8)

パッケージ: -

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TLD60981EPXUMA2

Infineon Technologies

LITIX POWER BOOST CONTROLLER

• Type: DC DC Controller
• Topology: Flyback, SEPIC, Step-Down (Buck), Step-Up (Boost)
• Internal Switch(s): No
• Number of Outputs: 1
• Voltage - Supply (Min): 4.5V
• Voltage - Supply (Max): 58V
• Voltage - Output: 0V ~ 70V
• Current - Output / Channel: 3mA
• Frequency: 100kHz ~ 500kHz
• Dimming: PWM
• Applications: Lighting
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
• Supplier Device Package: PG-TSDSO-14

パッケージ: -

IPP039N10N5XKSA1

Infineon Technologies

MV POWER MOS

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3.8V @ 125µA
• Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 50 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 188W (Tc)
• Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220-3
• Package / Case: TO-220-3

パッケージ: -

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