ページ 393 - Infineon Technologies 製品

部品番号	メーカ	説明	パッケージ	在庫
BSF053N03LT G	Infineon Technologies	MOSFET N-CH 30V 71A 2WDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 71A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.2W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 30A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: MG-WDSON-2, CanPAK M? Package / Case: 3-WDSON	パッケージ: 3-WDSON	在庫4,960
IRFR3706	Infineon Technologies	MOSFET N-CH 20V 75A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 88W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63	在庫20,880
IRFSL7734PBF	Infineon Technologies	MOSFET N-CH 75V 183A TO262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 183A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10150pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 290W (Tc) Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	パッケージ: TO-262-3 Long Leads, I2Pak, TO-262AA	在庫2,704
IPD65R600E6ATMA1	Infineon Technologies	MOSFET N-CH 650V 7.3A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 210µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 63W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 2.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63	在庫2,048
IPP120N04S302AKSA1	Infineon Technologies	MOSFET N-CH 40V 120A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 230µA Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	パッケージ: TO-220-3	在庫8,424
IRFH3707TR2PBF	Infineon Technologies	MOSFET N-CH 30V 12A PQFN33 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 29A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.35V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 755pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.8W (Ta) Rds On (Max) @ Id, Vgs: 12.4 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (3x3) Package / Case: 8-PowerVDFN	パッケージ: 8-PowerVDFN	在庫7,704
BCR 101T E6327	Infineon Technologies	TRANS PREBIAS NPN 250MW SC75 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 100k Resistor - Emitter Base (R2) (Ohms): 100k DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 100MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: PG-SC-75	パッケージ: SC-75, SOT-416	在庫2,928
IRU1010-25CS	Infineon Technologies	IC REG LINEAR 2.5V 1A 8SOIC Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 7V Voltage - Output (Min/Fixed): 2.5V Voltage - Output (Max): - Voltage Dropout (Max): 1.3V @ 1A Current - Output: 1A Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: 70dB (120Hz) Control Features: - Protection Features: Over Current, Over Temperature Operating Temperature: 0°C ~ 125°C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫7,424
IFX9201SGAUMA1	Infineon Technologies	IC HALF-BRIDGE DRVR 2 CH 12DSO Output Configuration: Half Bridge (2) Applications: DC Motors, General Purpose Interface: PWM, SPI Load Type: Inductive Technology: Power MOSFET Rds On (Typ): 100 mOhm LS, 100 mOhm HS Current - Output / Channel: 6A Current - Peak Output: - Voltage - Supply: 5 V ~ 36 V Voltage - Load: 5 V ~ 36 V Operating Temperature: -40°C ~ 125°C (TJ) Features: - Fault Protection: Current Limiting, Open Load Detect, Over Temperature, Short Circuit, UVLO Mounting Type: Surface Mount Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad Supplier Device Package: PG-DSO-12-17	パッケージ: 12-BSOP (0.295", 7.50mm Width) Exposed Pad	在庫2,848
SAF-XC878-13FFI 5V AA	Infineon Technologies	IC MCU 8BIT 52KB FLASH 64LQFP Core Processor: XC800 Core Size: 8-Bit Speed: 27MHz Connectivity: SPI, SSI, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Number of I/O: 40 Program Memory Size: 52KB (52K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 3.25K x 8 Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V Data Converters: A/D 8x10b Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: 64-LQFP Supplier Device Package: 64-LQFP (10x10)	パッケージ: 64-LQFP	在庫4,848
PVR3301	Infineon Technologies	IC RELAY 300VAC/DC 180MA 16-DIP Circuit: DPST (2 Form A) Output Type: AC, DC On-State Resistance (Max): 24 Ohm Load Current: 180mA Voltage - Input: 1.2VDC Voltage - Load: 0 ~ 300 V Mounting Type: Through Hole Termination Style: PC Pin Package / Case: 16-DIP (0.300", 7.62mm), 10 Leads Supplier Device Package: 16-DIP Relay Type: Relay	パッケージ: 16-DIP (0.300", 7.62mm), 10 Leads	在庫80,292
IAUMN10S5N017GATMA1	Infineon Technologies	MOSFET_(75V 120V( FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	パッケージ: -	Request a Quote
98-1076PBF	Infineon Technologies	IC DRIVER Type: - Output Type: - Max Output Power x Channels @ Load: - Voltage - Supply: - Features: - Mounting Type: - Operating Temperature: - Supplier Device Package: - Package / Case: -	パッケージ: -	Request a Quote
IPP110N20N3GXKSA1	Infineon Technologies	MOSFET N-CH 200V 88A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 88A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 270µA Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7100 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 88A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	パッケージ: -	在庫10,407
CY8C4147AZA-S245	Infineon Technologies	PSOC4 - GENERAL Core Processor: ARM® Cortex®-M0+ Core Size: 32-Bit Speed: 24MHz Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT Number of I/O: 54 Program Memory Size: 128KB (128K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 16K x 8 Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Data Converters: A/D 16, 20x10/12b SAR Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-LQFP Supplier Device Package: 64-TQFP (10x10)	パッケージ: -	Request a Quote
S28HL512TFPBHB013	Infineon Technologies	IC FLASH 512MBIT SPI/OCTL 24FBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 512Mbit Memory Interface: SPI - Octal I/O Clock Frequency: 166 MHz Write Cycle Time - Word, Page: 1.7ms Access Time: 6.5 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 24-VBGA Supplier Device Package: 24-FBGA (6x8)	パッケージ: -	Request a Quote
CY8C4126AXI-M443T	Infineon Technologies	IC MCU 32BIT 64KB FLASH 44TQFP Core Processor: ARM® Cortex®-M0+ Core Size: 32-Bit Single-Core Speed: 24MHz Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, LVD, POR, PWM, WDT Number of I/O: 36 Program Memory Size: 64KB (64K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 8K x 8 Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Data Converters: A/D 16x10b, 16x12b SAR; D/A 2x7b Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 44-LQFP Supplier Device Package: 44-TQFP (10x10)	パッケージ: -	Request a Quote
FP25R12KT4B15BPSA1	Infineon Technologies	LOW POWER ECONO AG-ECONO2C-411 IGBT Type: Trench Field Stop Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 25 A Power - Max: 160 W Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 1.45 nF @ 25 V Input: Three Phase Bridge Rectifier NTC Thermistor: Yes Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-ECONO2C	パッケージ: -	Request a Quote
FP35R12N2T4B86BPSA1	Infineon Technologies	LOW POWER ECONO IGBT Type: - Configuration: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Power - Max: - Vce(on) (Max) @ Vge, Ic: - Current - Collector Cutoff (Max): - Input Capacitance (Cies) @ Vce: - Input: - NTC Thermistor: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote
IPA60R170CFD7XKSA1	Infineon Technologies	MOSFET N-CH 650V 8A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 300µA Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1199 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 26W (Tc) Rds On (Max) @ Id, Vgs: 170mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-FP Package / Case: TO-220-3 Full Pack	パッケージ: -	在庫765
IPL65R095CFD7AUMA1	Infineon Technologies	COOLMOS CFD7 SUPERJUNCTION MOSFE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 630µA Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 171W (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 12.5A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-VSON-4 Package / Case: 4-PowerTSFN	パッケージ: -	Request a Quote
IPP60R280CFD7XKSA1	Infineon Technologies	MOSFET N-CH 650V 9A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 180µA Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 807 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 52W (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 3.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	パッケージ: -	在庫81
MB39A120APFV-G-BND-ERE1	Infineon Technologies	IC REGULATOR SSOP Output Type: - Function: - Output Configuration: - Topology: - Number of Outputs: - Output Phases: - Voltage - Supply (Vcc/Vdd): - Frequency - Switching: - Duty Cycle (Max): - Synchronous Rectifier: - Clock Sync: - Serial Interfaces: - Control Features: - Operating Temperature: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote
DZ435N40KS01HPSA1	Infineon Technologies	DIODE GEN PURP 4KV 700A PB501-1 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 4000 V Current - Average Rectified (Io): 700A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 mA @ 4000 V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: BG-PB501-1 Operating Temperature - Junction: 150°C (Max)	パッケージ: -	Request a Quote
TD590N18KOFXPSA1	Infineon Technologies	THYRISTOR Structure: - Number of SCRs, Diodes: - Voltage - Off State: - Current - On State (It (AV)) (Max): - Current - On State (It (RMS)) (Max): - Voltage - Gate Trigger (Vgt) (Max): - Current - Gate Trigger (Igt) (Max): - Current - Non Rep. Surge 50, 60Hz (Itsm): - Current - Hold (Ih) (Max): - Operating Temperature: - Mounting Type: - Package / Case: -	パッケージ: -	Request a Quote
CYT2B94CACQ0AZEGST	Infineon Technologies	IC MCU 32BT 2.0625MB FLSH 80LQFP Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F Core Size: 32-Bit Dual-Core Speed: 100MHz, 160MHz Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT Number of I/O: 63 Program Memory Size: 2.0625MB (2.0625M x 8) Program Memory Type: FLASH EEPROM Size: 128K x 8 RAM Size: 256K x 8 Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Data Converters: A/D 52x12b SAR Oscillator Type: External, Internal Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 80-LQFP Supplier Device Package: 80-LQFP (12x12)	パッケージ: -	Request a Quote
CY8C4146LQA-S273	Infineon Technologies	IC MCU 32BIT 64KB FLASH 40QFN Core Processor: ARM® Cortex®-M0+ Core Size: 32-Bit Speed: 48MHz Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT Number of I/O: 34 Program Memory Size: 64KB (64K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 8K x 8 Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount, Wettable Flank Package / Case: 40-UFQFN Exposed Pad Supplier Device Package: 40-QFN (6x6)	パッケージ: -	Request a Quote
DD171N14KHPSA1	Infineon Technologies	DIODE MODULE GP 1.4KV 171A Diode Configuration: 1 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1400 V Current - Average Rectified (Io) (per Diode): 171A Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 500 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20 mA @ 1400 V Operating Temperature - Junction: -40°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	パッケージ: -	Request a Quote
SLB9672XU20FW1523XTMA1	Infineon Technologies	SECURITY CONTROLLER OPTIGA TPM S Applications: Embedded Security Trusted Computing Core Processor: 32-Bit Program Memory Type: NVSRAM Controller Series: SLB 9672 RAM Size: 51K x 8 Interface: SPI Number of I/O: 3 Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 32-UFQFN Exposed Pad Supplier Device Package: PG-UQFN-32-1	パッケージ: -	在庫14,370
TT240N32KOFHPSA1	Infineon Technologies	SCR MODULE 3.2KV 700A MODULE Structure: Series Connection - All SCRs Number of SCRs, Diodes: 2 SCRs Voltage - Off State: 3.2 kV Current - On State (It (AV)) (Max): 446 A Current - On State (It (RMS)) (Max): 700 A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 6100A @ 50Hz Current - Hold (Ih) (Max): 300 mA Operating Temperature: -40°C ~ 125°C Mounting Type: Chassis Mount Package / Case: Module	パッケージ: -	Request a Quote

BSF053N03LT G

Infineon Technologies

MOSFET N-CH 30V 71A 2WDSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 71A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 30A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: MG-WDSON-2, CanPAK M?
Package / Case: 3-WDSON

パッケージ: 3-WDSON

在庫4,960

IRFR3706

Infineon Technologies

MOSFET N-CH 20V 75A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 10V
Vgs (Max): ±12V
FET Feature: -
Power Dissipation (Max): 88W (Tc)
Rds On (Max) @ Id, Vgs: 9 mOhm @ 15A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

在庫20,880

IRFSL7734PBF

Infineon Technologies

MOSFET N-CH 75V 183A TO262

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 183A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 10150pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 290W (Tc)
Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-262
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

パッケージ: TO-262-3 Long Leads, I2Pak, TO-262AA

在庫2,704

IPD65R600E6ATMA1

Infineon Technologies

MOSFET N-CH 650V 7.3A TO252-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 63W (Tc)
Rds On (Max) @ Id, Vgs: 600 mOhm @ 2.1A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

在庫2,048

IPP120N04S302AKSA1

Infineon Technologies

MOSFET N-CH 40V 120A TO220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 230µA
Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 14300pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 80A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-1
Package / Case: TO-220-3

パッケージ: TO-220-3

在庫8,424

IRFH3707TR2PBF

Infineon Technologies

MOSFET N-CH 30V 12A PQFN33

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 29A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 755pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.8W (Ta)
Rds On (Max) @ Id, Vgs: 12.4 mOhm @ 12A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-PQFN (3x3)
Package / Case: 8-PowerVDFN

パッケージ: 8-PowerVDFN

在庫7,704

BCR 101T E6327

Infineon Technologies

TRANS PREBIAS NPN 250MW SC75

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 100k
Resistor - Emitter Base (R2) (Ohms): 100k
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 100MHz
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: PG-SC-75

パッケージ: SC-75, SOT-416

在庫2,928

IRU1010-25CS

Infineon Technologies

IC REG LINEAR 2.5V 1A 8SOIC

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 7V
Voltage - Output (Min/Fixed): 2.5V
Voltage - Output (Max): -
Voltage Dropout (Max): 1.3V @ 1A
Current - Output: 1A
Current - Quiescent (Iq): -
Current - Supply (Max): -
PSRR: 70dB (120Hz)
Control Features: -
Protection Features: Over Current, Over Temperature
Operating Temperature: 0°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫7,424

IFX9201SGAUMA1

Infineon Technologies

IC HALF-BRIDGE DRVR 2 CH 12DSO

Output Configuration: Half Bridge (2)
Applications: DC Motors, General Purpose
Interface: PWM, SPI
Load Type: Inductive
Technology: Power MOSFET
Rds On (Typ): 100 mOhm LS, 100 mOhm HS
Current - Output / Channel: 6A
Current - Peak Output: -
Voltage - Supply: 5 V ~ 36 V
Voltage - Load: 5 V ~ 36 V
Operating Temperature: -40°C ~ 125°C (TJ)
Features: -
Fault Protection: Current Limiting, Open Load Detect, Over Temperature, Short Circuit, UVLO
Mounting Type: Surface Mount
Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad
Supplier Device Package: PG-DSO-12-17

パッケージ: 12-BSOP (0.295", 7.50mm Width) Exposed Pad

在庫2,848

SAF-XC878-13FFI 5V AA

Infineon Technologies

IC MCU 8BIT 52KB FLASH 64LQFP

Core Processor: XC800
Core Size: 8-Bit
Speed: 27MHz
Connectivity: SPI, SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Number of I/O: 40
Program Memory Size: 52KB (52K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 3.25K x 8
Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
Data Converters: A/D 8x10b
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: 64-LQFP
Supplier Device Package: 64-LQFP (10x10)

パッケージ: 64-LQFP

在庫4,848

PVR3301

Infineon Technologies

IC RELAY 300VAC/DC 180MA 16-DIP

Circuit: DPST (2 Form A)
Output Type: AC, DC
On-State Resistance (Max): 24 Ohm
Load Current: 180mA
Voltage - Input: 1.2VDC
Voltage - Load: 0 ~ 300 V
Mounting Type: Through Hole
Termination Style: PC Pin
Package / Case: 16-DIP (0.300", 7.62mm), 10 Leads
Supplier Device Package: 16-DIP
Relay Type: Relay

パッケージ: 16-DIP (0.300", 7.62mm), 10 Leads

在庫80,292

IAUMN10S5N017GATMA1

Infineon Technologies

MOSFET_(75V 120V(

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

パッケージ: -

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98-1076PBF

Infineon Technologies

IC DRIVER

Type: -
Output Type: -
Max Output Power x Channels @ Load: -
Voltage - Supply: -
Features: -
Mounting Type: -
Operating Temperature: -
Supplier Device Package: -
Package / Case: -

パッケージ: -

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IPP110N20N3GXKSA1

Infineon Technologies

MOSFET N-CH 200V 88A TO220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7100 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 88A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3
Package / Case: TO-220-3

パッケージ: -

在庫10,407

CY8C4147AZA-S245

Infineon Technologies

PSOC4 - GENERAL

Core Processor: ARM® Cortex®-M0+
Core Size: 32-Bit
Speed: 24MHz
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Number of I/O: 54
Program Memory Size: 128KB (128K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 16K x 8
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Data Converters: A/D 16, 20x10/12b SAR
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Supplier Device Package: 64-TQFP (10x10)

パッケージ: -

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S28HL512TFPBHB013

Infineon Technologies

IC FLASH 512MBIT SPI/OCTL 24FBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 512Mbit
Memory Interface: SPI - Octal I/O
Clock Frequency: 166 MHz
Write Cycle Time - Word, Page: 1.7ms
Access Time: 6.5 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Supplier Device Package: 24-FBGA (6x8)

パッケージ: -

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CY8C4126AXI-M443T

Infineon Technologies

IC MCU 32BIT 64KB FLASH 44TQFP

Core Processor: ARM® Cortex®-M0+
Core Size: 32-Bit Single-Core
Speed: 24MHz
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LVD, POR, PWM, WDT
Number of I/O: 36
Program Memory Size: 64KB (64K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 8K x 8
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Data Converters: A/D 16x10b, 16x12b SAR; D/A 2x7b
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-LQFP
Supplier Device Package: 44-TQFP (10x10)

パッケージ: -

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FP25R12KT4B15BPSA1

Infineon Technologies

LOW POWER ECONO AG-ECONO2C-411

IGBT Type: Trench Field Stop
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 25 A
Power - Max: 160 W
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.45 nF @ 25 V
Input: Three Phase Bridge Rectifier
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-ECONO2C

パッケージ: -

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FP35R12N2T4B86BPSA1

Infineon Technologies

LOW POWER ECONO

IGBT Type: -
Configuration: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Power - Max: -
Vce(on) (Max) @ Vge, Ic: -
Current - Collector Cutoff (Max): -
Input Capacitance (Cies) @ Vce: -
Input: -
NTC Thermistor: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

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IPA60R170CFD7XKSA1

Infineon Technologies

MOSFET N-CH 650V 8A TO220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 300µA
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1199 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 26W (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 6A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-FP
Package / Case: TO-220-3 Full Pack

パッケージ: -

在庫765

IPL65R095CFD7AUMA1

Infineon Technologies

COOLMOS CFD7 SUPERJUNCTION MOSFE

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 171W (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 12.5A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-VSON-4
Package / Case: 4-PowerTSFN

パッケージ: -

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IPP60R280CFD7XKSA1

Infineon Technologies

MOSFET N-CH 650V 9A TO220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 180µA
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 807 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 52W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.6A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3
Package / Case: TO-220-3

パッケージ: -

在庫81

MB39A120APFV-G-BND-ERE1

Infineon Technologies

IC REGULATOR SSOP

Output Type: -
Function: -
Output Configuration: -
Topology: -
Number of Outputs: -
Output Phases: -
Voltage - Supply (Vcc/Vdd): -
Frequency - Switching: -
Duty Cycle (Max): -
Synchronous Rectifier: -
Clock Sync: -
Serial Interfaces: -
Control Features: -
Operating Temperature: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

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DZ435N40KS01HPSA1

Infineon Technologies

DIODE GEN PURP 4KV 700A PB501-1

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 4000 V
Current - Average Rectified (Io): 700A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 mA @ 4000 V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: BG-PB501-1
Operating Temperature - Junction: 150°C (Max)

パッケージ: -

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TD590N18KOFXPSA1

Infineon Technologies

THYRISTOR

Structure: -
Number of SCRs, Diodes: -
Voltage - Off State: -
Current - On State (It (AV)) (Max): -
Current - On State (It (RMS)) (Max): -
Voltage - Gate Trigger (Vgt) (Max): -
Current - Gate Trigger (Igt) (Max): -
Current - Non Rep. Surge 50, 60Hz (Itsm): -
Current - Hold (Ih) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -

パッケージ: -

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CYT2B94CACQ0AZEGST

Infineon Technologies

IC MCU 32BT 2.0625MB FLSH 80LQFP

Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Core Size: 32-Bit Dual-Core
Speed: 100MHz, 160MHz
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Number of I/O: 63
Program Memory Size: 2.0625MB (2.0625M x 8)
Program Memory Type: FLASH
EEPROM Size: 128K x 8
RAM Size: 256K x 8
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Data Converters: A/D 52x12b SAR
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 80-LQFP
Supplier Device Package: 80-LQFP (12x12)

パッケージ: -

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CY8C4146LQA-S273

Infineon Technologies

IC MCU 32BIT 64KB FLASH 40QFN

Core Processor: ARM® Cortex®-M0+
Core Size: 32-Bit
Speed: 48MHz
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Number of I/O: 34
Program Memory Size: 64KB (64K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 8K x 8
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 40-UFQFN Exposed Pad
Supplier Device Package: 40-QFN (6x6)

パッケージ: -

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DD171N14KHPSA1

Infineon Technologies

DIODE MODULE GP 1.4KV 171A

Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1400 V
Current - Average Rectified (Io) (per Diode): 171A
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 500 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 20 mA @ 1400 V
Operating Temperature - Junction: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

パッケージ: -

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SLB9672XU20FW1523XTMA1

Infineon Technologies

SECURITY CONTROLLER OPTIGA TPM S

Applications: Embedded Security Trusted Computing
Core Processor: 32-Bit
Program Memory Type: NVSRAM
Controller Series: SLB 9672
RAM Size: 51K x 8
Interface: SPI
Number of I/O: 3
Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-UFQFN Exposed Pad
Supplier Device Package: PG-UQFN-32-1

パッケージ: -

在庫14,370

TT240N32KOFHPSA1

Infineon Technologies

SCR MODULE 3.2KV 700A MODULE

Structure: Series Connection - All SCRs
Number of SCRs, Diodes: 2 SCRs
Voltage - Off State: 3.2 kV
Current - On State (It (AV)) (Max): 446 A
Current - On State (It (RMS)) (Max): 700 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6100A @ 50Hz
Current - Hold (Ih) (Max): 300 mA
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: Module

パッケージ: -

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