Infineon Technologies 製品

IRGP6690DPBF

Infineon Technologies

IGBT 600V 140A 483W TO247AC

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 140A
• Current - Collector Pulsed (Icm): 225A
• Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 75A
• Power - Max: 483W
• Switching Energy: 3.1mJ (on), 2.8mJ (off)
• Input Type: Standard
• Gate Charge: 140nC
• Td (on/off) @ 25°C: 85ns/222ns
• Test Condition: 400V, 75A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 90ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AC

パッケージ: TO-247-3

IRF7703TRPBF

Infineon Technologies

MOSFET P-CH 40V 6A 8-TSSOP

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 62nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 5220pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.5W (Ta)
• Rds On (Max) @ Id, Vgs: 28 mOhm @ 6A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-TSSOP
• Package / Case: 8-TSSOP (0.173", 4.40mm Width)

パッケージ: 8-TSSOP (0.173", 4.40mm Width)

IRLR8113TRRPBF

Infineon Technologies

MOSFET N-CH 30V 94A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.25V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 2920pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 89W (Tc)
• Rds On (Max) @ Id, Vgs: 6 mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

IRF3707ZSPBF

Infineon Technologies

MOSFET N-CH 30V 59A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.25V @ 25µA
• Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1210pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 57W (Tc)
• Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 21A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

SPP11N60S5HKSA1

Infineon Technologies

MOSFET N-CH 650V 11A TO-220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5.5V @ 500µA
• Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1460pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 125W (Tc)
• Rds On (Max) @ Id, Vgs: 380 mOhm @ 7A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220-3-1
• Package / Case: TO-220-3

パッケージ: TO-220-3

IRF2807L

Infineon Technologies

MOSFET N-CH 75V 82A TO-262

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 75V
• Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3820pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 230W (Tc)
• Rds On (Max) @ Id, Vgs: 13 mOhm @ 43A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-262
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

パッケージ: TO-262-3 Long Leads, I2Pak, TO-262AA

IRFH8321TRPBF

Infineon Technologies

MOSFET N CH 30V 21A PQFN5X6

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 83A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 50µA
• Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.4W (Ta), 54W (Tc)
• Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PQFN (5x6)
• Package / Case: 8-TQFN Exposed Pad

パッケージ: 8-TQFN Exposed Pad

IRLR024NTRRPBF

Infineon Technologies

MOSFET N-CH 55V 17A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 25V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 45W (Tc)
• Rds On (Max) @ Id, Vgs: 65 mOhm @ 10A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

IPA075N15N3 G

Infineon Technologies

MOSFET N-CH 150V 43A TO220-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 150V
• Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
• Vgs(th) (Max) @ Id: 4V @ 270µA
• Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 7280pF @ 75V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 39W (Tc)
• Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 43A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220-3
• Package / Case: TO-220-3 Full Pack

パッケージ: TO-220-3 Full Pack

IRF9952PBF

Infineon Technologies

MOSFET N/P-CH 30V 8-SOIC

• FET Type: N and P-Channel
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 3.5A, 2.3A
• Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V
• Power - Max: 2W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

パッケージ: 8-SOIC (0.154", 3.90mm Width)

BFN 19 E6327

Infineon Technologies

TRANS PNP 300V 0.2A SOT-89

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 200mA
• Voltage - Collector Emitter Breakdown (Max): 300V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 10V
• Power - Max: 1W
• Frequency - Transition: 100MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-243AA
• Supplier Device Package: PG-SOT89

パッケージ: TO-243AA

TLE6230GP

Infineon Technologies

IC SW SMART OCTAL LOWSIDE PDSO36

• Switch Type: General Purpose
• Number of Outputs: 8
• Ratio - Input:Output: 1:8
• Output Configuration: Low Side
• Output Type: N-Channel
• Interface: SPI
• Voltage - Load: 4.5 V ~ 5.5 V
• Voltage - Supply (Vcc/Vdd): -
• Current - Output (Max): -
• Rds On (Typ): 800 mOhm
• Input Type: -
• Features: Status Flag
• Fault Protection: Open Load Detect, Over Temperature, Over Voltage
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad
• Supplier Device Package: P-DSO-36

パッケージ: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad

IR2156S

Infineon Technologies

IC CNTL BALLAST 600V 0.5A 14SOIC

• Type: Ballast Controller
• Frequency: 36kHz ~ 44kHz
• Voltage - Supply: 10.5 V ~ 16.5 V
• Current - Supply: 10mA
• Current - Output Source/Sink: -
• Dimming: No
• Operating Temperature: -25°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 14-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 14-SOIC

パッケージ: 14-SOIC (0.154", 3.90mm Width)

AUIRS2191STR

Infineon Technologies

IC DRIVER HIGH/LOW SIDE 16SOIC

• Driven Configuration: Half-Bridge
• Channel Type: Independent
• Number of Drivers: 2
• Gate Type: IGBT, N-Channel MOSFET
• Voltage - Supply: 10 V ~ 20 V
• Logic Voltage - VIL, VIH: 0.8V, 2.5V
• Current - Peak Output (Source, Sink): 3.5A, 3.5A
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): 600V
• Rise / Fall Time (Typ): 15ns, 15ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 16-SOIC

パッケージ: 16-SOIC (0.154", 3.90mm Width)

TDA21220AUMA1

Infineon Technologies

MOSFET DRIVER 40IQFN

• Output Configuration: Half Bridge
• Applications: Buck Converters
• Interface: PWM
• Load Type: Inductive
• Technology: DrMOS
• Rds On (Typ): -
• Current - Output / Channel: 50A
• Current - Peak Output: -
• Voltage - Supply: 4.5 V ~ 5.5 V
• Voltage - Load: 5 V ~ 16 V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Features: Bootstrap Circuit
• Fault Protection: Shoot-Through, UVLO
• Mounting Type: Surface Mount
• Package / Case: 40-VFQFN Exposed Pad
• Supplier Device Package: PG-IQFN-40-1

パッケージ: 40-VFQFN Exposed Pad

TLE92633QXV33XUMA1

Infineon Technologies

IC SBC 48VQFN

• Applications: Automotive
• Interface: SPI
• Voltage - Supply: -
• Package / Case: 48-VFQFN Exposed Pad
• Supplier Device Package: PG-VQFN-48-31
• Mounting Type: Surface Mount

パッケージ: 48-VFQFN Exposed Pad

C161KLMHAFXQMA1

Infineon Technologies

IC MCU 16BIT ROMLESS 80MQFP

• Core Processor: C166
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: EBI/EMI, SPI, UART/USART
• Peripherals: POR, PWM, WDT
• Number of I/O: 63
• Program Memory Size: -
• Program Memory Type: ROMless
• EEPROM Size: -
• RAM Size: 1K x 8
• Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
• Data Converters: -
• Oscillator Type: External
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: 80-QFP
• Supplier Device Package: 80-MQFP (14x14)

パッケージ: 80-QFP

PVA3354NSPBF

Infineon Technologies

IC RELAY PHOTOVO 300V 150MA 8SMD

• Circuit: SPST-NO (1 Form A)
• Output Type: AC, DC
• On-State Resistance (Max): 24 Ohm
• Load Current: 150mA
• Voltage - Input: 1.2VDC
• Voltage - Load: 0 ~ 300 V
• Mounting Type: Surface Mount
• Termination Style: Gull Wing
• Package / Case: 8-SMD (0.300", 7.62mm) 4 Leads
• Supplier Device Package: 8-SMT Modified
• Relay Type: Relay

パッケージ: 8-SMD (0.300", 7.62mm) 4 Leads

TLS820B2ELVSEXUMA1

Infineon Technologies

LINEAR VOLTAGE REGULATOR

• Output Configuration: Positive
• Output Type: Programmable
• Number of Regulators: 1
• Voltage - Input (Max): 40V
• Voltage - Output (Min/Fixed): 3.3V, 5V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.48V @ 200mA, 0.4V @ 200mA
• Current - Output: 200mA
• Current - Quiescent (Iq): 25µA
• Current - Supply (Max): -
• PSRR: 60dB (100Hz), 63db (100Hz)
• Control Features: Enable
• Protection Features: Over Current, Over Temperature
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
• Supplier Device Package: PG-SSOP-14-5

パッケージ: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad

IDH10G65C5ZXKSA2

Infineon Technologies

DIODE SCHOTTKY 650V 10A TO220-2

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

パッケージ: -

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BAS70-02WE6327

Infineon Technologies

DIODE SCHOTTKY 70V 70MA SCD80-2

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 70 V
• Current - Average Rectified (Io): 70mA
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 100 ps
• Current - Reverse Leakage @ Vr: 100 nA @ 50 V
• Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SC-80
• Supplier Device Package: PG-SCD80-2
• Operating Temperature - Junction: 150°C

パッケージ: -

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S27KL0643DPBHI020

Infineon Technologies

IC PSRAM 64MBIT SPI/OCTAL 24FBGA

• Memory Type: Volatile
• Memory Format: PSRAM
• Technology: PSRAM (Pseudo SRAM)
• Memory Size: 64Mbit
• Memory Interface: SPI - Octal I/O
• Clock Frequency: 166 MHz
• Write Cycle Time - Word, Page: 36ns
• Access Time: 36 ns
• Voltage - Supply: 2.7V ~ 3.6V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-VBGA
• Supplier Device Package: 24-FBGA (6x8)

パッケージ: -

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IPW90R340C3XKSA1

Infineon Technologies

MOSFET N-CH 900V 15A TO247-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 900 V
• Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 208W (Tc)
• Rds On (Max) @ Id, Vgs: 340mOhm @ 9.2A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO247-3-21
• Package / Case: TO-247-3

パッケージ: -

PX3143HDMSM1385XTMA1

Infineon Technologies

IC CONTROLLER

• Output Type: -
• Function: -
• Output Configuration: -
• Topology: -
• Number of Outputs: -
• Output Phases: -
• Voltage - Supply (Vcc/Vdd): -
• Frequency - Switching: -
• Duty Cycle (Max): -
• Synchronous Rectifier: -
• Clock Sync: -
• Serial Interfaces: -
• Control Features: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

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FF450R45T3E4B5BPSA1

Infineon Technologies

IGBT MODULE

• IGBT Type: -
• Configuration: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Power - Max: -
• Vce(on) (Max) @ Vge, Ic: -
• Current - Collector Cutoff (Max): -
• Input Capacitance (Cies) @ Vce: -
• Input: -
• NTC Thermistor: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

CG8229AA

Infineon Technologies

IC SRAM MICROPOWER

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

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BAS16WE6327

Infineon Technologies

DIODE GP 80V 250MA SOT323-3-1

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 80 V
• Current - Average Rectified (Io): 250mA
• Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 4 ns
• Current - Reverse Leakage @ Vr: 1 µA @ 75 V
• Capacitance @ Vr, F: 2pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: PG-SOT323-3-1
• Operating Temperature - Junction: 150°C

パッケージ: -

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TT140N22KOFHPSA1

Infineon Technologies

SCR MODULE 2.2KV 250A MODULE

• Structure: Series Connection - All SCRs
• Number of SCRs, Diodes: 2 SCRs
• Voltage - Off State: 2.2 kV
• Current - On State (It (AV)) (Max): 159 A
• Current - On State (It (RMS)) (Max): 250 A
• Voltage - Gate Trigger (Vgt) (Max): 2 V
• Current - Gate Trigger (Igt) (Max): 150 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 4000A @ 50Hz
• Current - Hold (Ih) (Max): 200 mA
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: Module

パッケージ: -

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IM240M6Y2BAKSA1

Infineon Technologies

MODULE IPM 3PHASE DIP23A

• Type: IGBT
• Configuration: 3 Phase Inverter
• Current: 4 A
• Voltage: 600 V
• Voltage - Isolation: 1900Vrms
• Package / Case: 23-DIP Module (0.573", 14.55mm)

パッケージ: -

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BSR802NL6327HTSA1

Infineon Technologies

MOSFET N-CH 20V 3.7A SC59

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20 V
• Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V
• Vgs(th) (Max) @ Id: 750mV @ 30µA
• Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 2.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 1447 pF @ 10 V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 500mW (Ta)
• Rds On (Max) @ Id, Vgs: 23mOhm @ 3.7A, 2.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-SC59-3
• Package / Case: TO-236-3, SC-59, SOT-23-3

パッケージ: -