Infineon Technologies 製品

AUIRGB4062D1

Infineon Technologies

IGBT 600V 59A 246W TO-220AB

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 59A
• Current - Collector Pulsed (Icm): 72A
• Vce(on) (Max) @ Vge, Ic: 1.77V @ 15V, 24A
• Power - Max: 246W
• Switching Energy: 532µJ (on), 311µJ (off)
• Input Type: Standard
• Gate Charge: 77nC
• Td (on/off) @ 25°C: 19ns/90ns
• Test Condition: 400V, 24A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 102ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

パッケージ: TO-220-3

IGB30N60TATMA1

Infineon Technologies

IGBT 600V 60A 187W TO263-3-2

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 60A
• Current - Collector Pulsed (Icm): 90A
• Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 30A
• Power - Max: 187W
• Switching Energy: 1.46mJ
• Input Type: Standard
• Gate Charge: 167nC
• Td (on/off) @ 25°C: 23ns/254ns
• Test Condition: 400V, 30A, 10.6 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: PG-TO263-3-2

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRF2804STRR7PP

Infineon Technologies

MOSFET N-CH 40V 160A D2PAK-7

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 6930pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 330W (Tc)
• Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 160A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK (7-Lead)
• Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

パッケージ: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

IRFU15N20DPBF

Infineon Technologies

MOSFET N-CH 200V 17A I-PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 110W (Tc)
• Rds On (Max) @ Id, Vgs: 165 mOhm @ 10A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: IPAK (TO-251)
• Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

パッケージ: TO-251-3 Short Leads, IPak, TO-251AA

IPP60R099CPAAKSA1

Infineon Technologies

MOSFET N-CH 600V 31A TO-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
• Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 255W (Tc)
• Rds On (Max) @ Id, Vgs: 105 mOhm @ 18A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO-220-3
• Package / Case: TO-220-3

パッケージ: TO-220-3

IPB80N06S207ATMA4

Infineon Technologies

MOSFET N-CH 55V 80A TO263-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 180µA
• Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 250W (Tc)
• Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 68A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO263-3-2
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRFS23N20DTRLP

Infineon Technologies

MOSFET N-CH 200V 24A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1960pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 3.8W (Ta), 170W (Tc)
• Rds On (Max) @ Id, Vgs: 100 mOhm @ 14A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

SI4410DYTRPBF

Infineon Technologies

MOSFET N-CH 30V 10A 8-SOIC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1585pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta)
• Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 10A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

パッケージ: 8-SOIC (0.154", 3.90mm Width)

IRF7450TRPBF

Infineon Technologies

MOSFET N-CH 200V 2.5A 8-SOIC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 940pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta)
• Rds On (Max) @ Id, Vgs: 170 mOhm @ 1.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

パッケージ: 8-SOIC (0.154", 3.90mm Width)

PTFC262157SHV1R250XTMA1

Infineon Technologies

IC AMP RF LDMOS

• Transistor Type: -
• Frequency: -
• Gain: -
• Voltage - Test: -
• Current Rating: -
• Noise Figure: -
• Current - Test: -
• Power - Output: -
• Voltage - Rated: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

BCP5610E6327HTSA1

Infineon Technologies

TRANS NPN 80V 1A SOT-223

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 80V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
• Power - Max: 2W
• Frequency - Transition: 100MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: PG-SOT223-4

パッケージ: TO-261-4, TO-261AA

SIDC23D60E6Y

Infineon Technologies

DIODE GEN PURP 600V 50A WAFER

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 50A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.25V @ 50A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 27µA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Sawn on foil
• Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: Die

IP2003ATR

Infineon Technologies

IC REG BUCK ADJ 40A SYNC LGA

• Function: Step-Down
• Output Configuration: Positive
• Topology: Buck
• Output Type: Adjustable
• Number of Outputs: 1
• Voltage - Input (Min): 3V
• Voltage - Input (Max): 13.2V
• Voltage - Output (Min/Fixed): 0.8V
• Voltage - Output (Max): 3.3V
• Current - Output: 40A
• Frequency - Switching: 300kHz ~ 1MHz
• Synchronous Rectifier: Yes
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Power Block (LGA)
• Supplier Device Package: LGA (11x11)

パッケージ: Power Block (LGA)

IR11682STRPBF

Infineon Technologies

IC SECONDARY SIDE CTRLR 8SOIC

• Applications: Secondary-Side Controller, Synchronous Rectifier
• Voltage - Input: -
• Voltage - Supply: 8.6 V ~ 18 V
• Current - Supply: 48mA
• Operating Temperature: -25°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

パッケージ: 8-SOIC (0.154", 3.90mm Width)

BTS3110NNT

Infineon Technologies

IC PWR SWITCH N-CH 1:1 SOT223-4

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: Low Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 42V (Max)
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 1.4A
• Rds On (Typ): 150 mOhm
• Input Type: Non-Inverting
• Features: -
• Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: PG-SOT223-4

パッケージ: TO-261-4, TO-261AA

IR2152

Infineon Technologies

IC DRVR HALF BRDG SELF-OSC 8-DIP

• Driven Configuration: Half-Bridge
• Channel Type: Synchronous
• Number of Drivers: 2
• Gate Type: IGBT, N-Channel MOSFET
• Voltage - Supply: 10 V ~ 20 V
• Logic Voltage - VIL, VIH: -
• Current - Peak Output (Source, Sink): 125mA, 250mA
• Input Type: RC Input Circuit
• High Side Voltage - Max (Bootstrap): 600V
• Rise / Fall Time (Typ): 80ns, 40ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 8-DIP (0.300", 7.62mm)
• Supplier Device Package: 8-DIP

パッケージ: 8-DIP (0.300", 7.62mm)

SAB80C537-N

Infineon Technologies

IC MCU 8BIT ROMLESS 84PLCC

• Core Processor: 8051
• Core Size: 8-Bit
• Speed: 12MHz
• Connectivity: EBI/EMI, UART/USART
• Peripherals: POR, PWM, WDT
• Number of I/O: 56
• Program Memory Size: -
• Program Memory Type: ROMless
• EEPROM Size: -
• RAM Size: 256 x 8
• Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 12x8b
• Oscillator Type: External
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: -
• Package / Case: 84-LCC (J-Lead)
• Supplier Device Package: -

パッケージ: 84-LCC (J-Lead)

T470N14TOFXPSA1

Infineon Technologies

SCR MODULE 1600V 800A DO200AA

• Structure: Single
• Number of SCRs, Diodes: 1 SCR
• Voltage - Off State: 1.6 kV
• Current - On State (It (AV)) (Max): 470 A
• Current - On State (It (RMS)) (Max): 800 A
• Voltage - Gate Trigger (Vgt) (Max): 2 V
• Current - Gate Trigger (Igt) (Max): 200 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 7100A @ 50Hz
• Current - Hold (Ih) (Max): 300 mA
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: TO-200AA

パッケージ: -

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IDWD15G120C5XKSA1

Infineon Technologies

DIODE SIL CARB 1.2KV 49A TO247-2

• Diode Type: SiC (Silicon Carbide) Schottky
• Voltage - DC Reverse (Vr) (Max): 1200 V
• Current - Average Rectified (Io): 49A
• Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 15 A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0 ns
• Current - Reverse Leakage @ Vr: 124 µA @ 1200 V
• Capacitance @ Vr, F: 1050pF @ 1V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-247-2
• Supplier Device Package: PG-TO247-2
• Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: -

CY62148G30-45ZAXIT

Infineon Technologies

ASYNC

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Single Port, Asynchronous
• Memory Size: 4Mbit
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 45ns
• Access Time: 45 ns
• Voltage - Supply: 2.2V ~ 3.6V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 32-TFSOP (0.465", 11.80mm Width)
• Supplier Device Package: 32-TSOP I

パッケージ: -

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CY8C4147AZAS585XQLA1

Infineon Technologies

PSOC4 - GENERAL

• Core Processor: ARM® Cortex®-M0+
• Core Size: 32-Bit
• Speed: 48MHz
• Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
• Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, I2S, DMA, LCD, LVD, POR, PWM, SHA, Temp Sensor, TRNG, WDT
• Number of I/O: 54
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 16K x 8
• Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
• Data Converters: A/D 16x12b SAR
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-LQFP
• Supplier Device Package: 64-TQFP (10x10)

パッケージ: -

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TT140N22KOFHPSA2

Infineon Technologies

THYR / DIODE MODULE DK

• Structure: Series Connection - All SCRs
• Number of SCRs, Diodes: 2 SCRs
• Voltage - Off State: 2.2 kV
• Current - On State (It (AV)) (Max): 159 A
• Current - On State (It (RMS)) (Max): 250 A
• Voltage - Gate Trigger (Vgt) (Max): 2 V
• Current - Gate Trigger (Igt) (Max): 150 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 4000A @ 50Hz
• Current - Hold (Ih) (Max): 200 mA
• Operating Temperature: 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module

パッケージ: -

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F3L15MR12W2M1B69BOMA1

Infineon Technologies

LOW POWER EASY

• IGBT Type: Trench
• Configuration: Three Level Inverter
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 75 A
• Power - Max: 20 mW
• Vce(on) (Max) @ Vge, Ic: -
• Current - Collector Cutoff (Max): -
• Input Capacitance (Cies) @ Vce: 5.52 nF @ 800 V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: AG-EASY2BM-2

パッケージ: -

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CY8C4149AZI-S585

Infineon Technologies

IC MCU 32BIT 384KB FLSH 100LQFP

• Core Processor: ARM® Cortex®-M0+
• Core Size: 32-Bit
• Speed: 48MHz
• Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
• Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, DMA, LCD, POR, PWM, SHA, Temp Sensor, TRNG, WDT
• Number of I/O: 54
• Program Memory Size: 384KB (384K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 32K x 8
• Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
• Data Converters: A/D 16x12b SAR
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-LQFP
• Supplier Device Package: 100-TQFP (14x14)

パッケージ: -

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DF900R12IP4DPB60BPSA1

Infineon Technologies

PP IHM I

• IGBT Type: Trench Field Stop
• Configuration: Single Chopper
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 900 A
• Power - Max: 5.1 kW
• Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A
• Current - Collector Cutoff (Max): 500 µA
• Input Capacitance (Cies) @ Vce: 54000 pF @ 25 V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

パッケージ: -

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CY8C4146AZA-S265T

Infineon Technologies

PSOC4 - GENERAL

• Core Processor: ARM® Cortex®-M0+
• Core Size: 32-Bit
• Speed: 48MHz
• Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
• Peripherals: Brown-out Detect/Reset, CapSense, POR, PWM, WDT
• Number of I/O: 54
• Program Memory Size: 64KB (64K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 8K x 8
• Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
• Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-LQFP
• Supplier Device Package: 64-TQFP (10x10)

パッケージ: -

CY8C4148AZQ-S455

Infineon Technologies

IC MCU 32BIT 256KB FLASH 64TQFP

• Core Processor: ARM® Cortex®-M0+
• Core Size: 32-Bit
• Speed: 48MHz
• Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
• Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
• Number of I/O: 54
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 32K x 8
• Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
• Data Converters: A/D 16x10b, 20x12b SAR; D/A 2x7/8b
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-LQFP
• Supplier Device Package: 64-TQFP (10x10)

パッケージ: -

IPL60R105P7AUMA1

Infineon Technologies

MOSFET N-CH 600V 33A 4VSON

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 530µA
• Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1952 pF @ 400 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 137W (Tc)
• Rds On (Max) @ Id, Vgs: 105mOhm @ 10.5A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-VSON-4
• Package / Case: 4-PowerTSFN

パッケージ: -