ページ 416 - Infineon Technologies 製品

部品番号	メーカ	説明	パッケージ	在庫
IRG4BC20SD-S	Infineon Technologies	IGBT 600V 19A 60W D2PAK IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 19A Current - Collector Pulsed (Icm): 38A Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 10A Power - Max: 60W Switching Energy: 320µJ (on), 2.58mJ (off) Input Type: Standard Gate Charge: 27nC Td (on/off) @ 25°C: 62ns/690ns Test Condition: 480V, 10A, 50 Ohm, 15V Reverse Recovery Time (trr): 37ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	在庫3,040
IRFHM4226TRPBF	Infineon Technologies	MOSFET N CH 25V 28A PQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 28A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 13V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.7W (Ta), 39W (Tc) Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: - Package / Case: 8-TQFN Exposed Pad	パッケージ: 8-TQFN Exposed Pad	在庫5,312
SN7002W L6433	Infineon Technologies	MOSFET N-CH 60V 230MA SOT-323 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 230mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.8V @ 26µA Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 5 Ohm @ 230mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT323-3 Package / Case: SC-70, SOT-323	パッケージ: SC-70, SOT-323	在庫7,440
IPD80N04S306ATMA1	Infineon Technologies	MOSFET N-CH 40V 90A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 52µA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3250pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63	在庫2,496
IPG20N04S412ATMA1	Infineon Technologies	MOSFET 2N-CH 8TDSON FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 12.2 mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 4V @ 15µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 25V Power - Max: 41W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-4	パッケージ: 8-PowerVDFN	在庫3,664
BDP948H6433XTMA1	Infineon Technologies	TRANS PNP 45V 3A SOT223 Transistor Type: PNP Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V Power - Max: 5W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: PG-SOT223-4	パッケージ: TO-261-4, TO-261AA	在庫4,592
BCR 148L3 E6327	Infineon Technologies	TRANS PREBIAS NPN 250MW TSLP-3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 70mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 100MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: PG-TSLP-3	パッケージ: SC-101, SOT-883	在庫7,264
BAS 16-02V E6327	Infineon Technologies	DIODE GEN PURP 80V 200MA SC79-2 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 1µA @ 75V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: PG-SC79-2 Operating Temperature - Junction: 150°C (Max)	パッケージ: SC-79, SOD-523	在庫4,864
SMBD7000E6327HTSA1	Infineon Technologies	DIODE ARRAY GP 100V 200MA SOT23 Diode Configuration: 1 Pair Series Connection Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io) (per Diode): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 500nA @ 100V Operating Temperature - Junction: 150°C (Max) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	パッケージ: TO-236-3, SC-59, SOT-23-3	在庫255,624
TLE4270-2D	Infineon Technologies	IC REG LIN 5V 650MA TO252-5-11 Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 42V Voltage - Output (Min/Fixed): 5V Voltage - Output (Max): - Voltage Dropout (Max): 0.7V @ 550mA Current - Output: 650mA Current - Quiescent (Iq): - Current - Supply (Max): 1.5mA ~ 90mA PSRR: 54dB (100Hz) Control Features: Reset Protection Features: Over Current, Over Temperature, Over Voltage, Reverse Polarity, Short Circuit, Transient Voltage Operating Temperature: -40°C ~ 150°C Mounting Type: Surface Mount Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Supplier Device Package: PG-TO252-5-11	パッケージ: TO-252-5, DPak (4 Leads + Tab), TO-252AD	在庫114,708
XC835MT2FGIABFXUMA1	Infineon Technologies	IC MCU 8BIT 8KB FLASH PDSO24 Core Processor: XC800 Core Size: 8-Bit Speed: 24MHz Connectivity: I2C, SSC, UART/USART Peripherals: Brown-out Detect/Reset, LED, POR, PWM, WDT Number of I/O: 21 Program Memory Size: 8KB (8K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 512 x 8 Voltage - Supply (Vcc/Vdd): 2.5 V ~ 5.5 V Data Converters: A/D 8x10b Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: 24-SOIC (0.295", 7.50mm Width) Supplier Device Package: P-DSO-24	パッケージ: 24-SOIC (0.295", 7.50mm Width)	在庫3,520
XC2733X20F66LRAAKXUMA1	Infineon Technologies	IC MCU 16BIT 166KB FLASH 64LQFP Core Processor: C166SV2 Core Size: 16/32-Bit Speed: 66MHz Connectivity: CAN, EBI/EMI, I2C, LIN, SPI, UART/USART Peripherals: I2S, POR, PWM, WDT Number of I/O: 48 Program Memory Size: 166KB (166K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 12K x 8 Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V Data Converters: A/D 19x12b Oscillator Type: Internal Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: - Package / Case: 64-LQFP Exposed Pad Supplier Device Package: PG-LQFP-64	パッケージ: 64-LQFP Exposed Pad	在庫4,112
KP214F2611XTMA1	Infineon Technologies	IC ANLG ABSOLUTE PRES SNSR DSOF8 Pressure Type: - Operating Pressure: - Output Type: - Output: - Accuracy: - Voltage - Supply: - Port Size: - Port Style: - Features: - Termination Style: - Maximum Pressure: - Operating Temperature: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫7,488
TLE4928CNE6947HAMA1	Infineon Technologies	MAGNETIC SWITCH BIPOLAR 3SSO Function: Bipolar Switch Technology: Hall Effect Polarization: North Pole, South Pole Sensing Range: - Test Condition: - Voltage - Supply: - Current - Supply (Max): - Current - Output (Max): - Output Type: Open Drain Features: - Operating Temperature: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫3,042
TLE4905LHALA1	Infineon Technologies	MAGNETIC SWITCH UNIPOL PSSO-3-2 Function: Unipolar Switch Technology: Hall Effect Polarization: South Pole Sensing Range: 18mT Trip, 5mT Release Test Condition: 25°C Voltage - Supply: 3.8 V ~ 24 V Current - Supply (Max): 8mA Current - Output (Max): 100mA Output Type: Open Collector Features: Temperature Compensated Operating Temperature: -40°C ~ 150°C (TJ) Package / Case: 3-SIP, SSO-3-02 Supplier Device Package: P-SSO-3-2	パッケージ: 3-SIP, SSO-3-02	在庫96,000
IR3566AMIS01TRP	Infineon Technologies	IC REG BUCK 48VQFN Output Type: - Function: - Output Configuration: - Topology: - Number of Outputs: - Output Phases: - Voltage - Supply (Vcc/Vdd): - Frequency - Switching: - Duty Cycle (Max): - Synchronous Rectifier: - Clock Sync: - Serial Interfaces: - Control Features: - Operating Temperature: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫72,000
TLE42712SNKSA1	Infineon Technologies	IC REG LIN 5V 550MA TO220-7-12 Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 40V Voltage - Output (Min/Fixed): 5V Voltage - Output (Max): - Voltage Dropout (Max): 0.7V @ 550mA Current - Output: 550mA Current - Quiescent (Iq): 6µA Current - Supply (Max): 90mA PSRR: 54dB (100Hz) Control Features: Reset, Watchdog Protection Features: Over Current, Over Temperature, Over Voltage, Reverse Polarity, Short Circuit Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-7 Supplier Device Package: PG-TO-220-7-12	パッケージ: TO-220-7	在庫4,368
XC2060M104F80LAAKXUMA1	Infineon Technologies	IC MCU 16BIT 100LQFP Core Processor: - Core Size: - Speed: - Connectivity: - Peripherals: - Number of I/O: - Program Memory Size: - Program Memory Type: - EEPROM Size: - RAM Size: - Voltage - Supply (Vcc/Vdd): - Data Converters: - Oscillator Type: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫4,880
AIMZH120R060M1TXKSA1	Infineon Technologies	SIC_DISCRETE FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V, 20V Vgs(th) (Max) @ Id: 5.1V @ 4.3mA Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 800 V Vgs (Max): +23V, -5V FET Feature: - Power Dissipation (Max): 197W (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 13A, 20V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-4-11 Package / Case: TO-247-4	パッケージ: -	在庫111
CY27410LTXI-007	Infineon Technologies	IC SS CLOCK GENERATOR 48QFN Type: Spread Spectrum Clock Generator PLL: Yes with Bypass Input: LVCMOS, Crystal Output: CML, HCSL, LVCMOS, LVDS, LVPECL Number of Circuits: 1 Ratio - Input:Output: 3:12 Differential - Input:Output: Yes/Yes Frequency - Max: 250MHz, 700MHz Divider/Multiplier: Yes/No Voltage - Supply: 1.71V ~ 1.89V, 2.25V ~ 2.75V, 3.13V ~ 3.46V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-VFQFN Exposed Pad Supplier Device Package: 48-QFN (7x7)	パッケージ: -	Request a Quote
CY8C4246AZI-L435	Infineon Technologies	IC MCU 32BIT 64KB FLASH 64TQFP Core Processor: ARM® Cortex®-M0 Core Size: 32-Bit Single-Core Speed: 48MHz Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART, USB Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, SmartSense, WDT Number of I/O: 53 Program Memory Size: 64KB (64K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 8K x 8 Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Data Converters: A/D 16x12b; D/A 2x7b, 2x8b Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-LQFP Supplier Device Package: 64-TQFP (10x10)	パッケージ: -	Request a Quote
CY9AF111NABGL-GK9E1	Infineon Technologies	IC MCU 32BIT 64KB FLASH 112BGA Core Processor: ARM® Cortex®-M3 Core Size: 32-Bit Single-Core Speed: 40MHz Connectivity: CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Number of I/O: 83 Program Memory Size: 64KB (64K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 16K x 8 Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Data Converters: A/D 16x12b Oscillator Type: Internal Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 112-LFBGA Supplier Device Package: 112-PFBGA (10x10)	パッケージ: -	Request a Quote
IRF9393TRPBFXTMA1	Infineon Technologies	TRENCH <= 40V FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 20V Vgs(th) (Max) @ Id: 2.4V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 25 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 13.3mOhm @ 9.2A, 20V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	パッケージ: -	Request a Quote
CY7C652148-24LTXI	Infineon Technologies	USB Full-Speed Peripherals Protocol: USB Function: Bridge Interface: GPIO, SPI Standards: USB 2.0 Voltage - Supply: 1.71V ~ 1.89V, 2V ~ 3.45V, 3.15V ~ 5.25V, 4.35V ~ 5.5V Current - Supply: 20mA Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 24-UFQFN Exposed Pad Supplier Device Package: 24-QFN (4x4)	パッケージ: -	在庫7,242
CYT2B77CADQ0AZEGS	Infineon Technologies	IC MCU 32BT 1.0625MB FLSH 144QFP Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F Core Size: 32-Bit Dual-Core Speed: 100MHz, 160MHz Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT Number of I/O: 122 Program Memory Size: 1.0625MB (1.0625M x 8) Program Memory Type: FLASH EEPROM Size: 96K x 8 RAM Size: 128K x 8 Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Data Converters: A/D 72x12b SAR Oscillator Type: External, Internal Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 144-LQFP Supplier Device Package: 144-LQFP (20x20)	パッケージ: -	Request a Quote
BFR92PE6530HTSA1	Infineon Technologies	RF LOW-NOISE SI TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote
CY8C4124PVA-S432T	Infineon Technologies	PSOC4 - GENERAL Core Processor: ARM® Cortex®-M0+ Core Size: 32-Bit Speed: 24MHz Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT Number of I/O: 24 Program Memory Size: 16KB (16K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 4K x 8 Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 28-SSOP (0.209", 5.30mm Width) Supplier Device Package: 28-SSOP	パッケージ: -	Request a Quote
IRF8721TRPBFXTMA1	Infineon Technologies	TRENCH <= 40V FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	パッケージ: -	在庫12,000

IRG4BC20SD-S

Infineon Technologies

IGBT 600V 19A 60W D2PAK

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 19A
Current - Collector Pulsed (Icm): 38A
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 10A
Power - Max: 60W
Switching Energy: 320µJ (on), 2.58mJ (off)
Input Type: Standard
Gate Charge: 27nC
Td (on/off) @ 25°C: 62ns/690ns
Test Condition: 480V, 10A, 50 Ohm, 15V
Reverse Recovery Time (trr): 37ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

在庫3,040

IRFHM4226TRPBF

Infineon Technologies

MOSFET N CH 25V 28A PQFN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.1V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 13V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.7W (Ta), 39W (Tc)
Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: -
Package / Case: 8-TQFN Exposed Pad

パッケージ: 8-TQFN Exposed Pad

在庫5,312

SN7002W L6433

Infineon Technologies

MOSFET N-CH 60V 230MA SOT-323

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 1.8V @ 26µA
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 5 Ohm @ 230mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-SOT323-3
Package / Case: SC-70, SOT-323

パッケージ: SC-70, SOT-323

在庫7,440

IPD80N04S306ATMA1

Infineon Technologies

MOSFET N-CH 40V 90A TO252-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 52µA
Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3250pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 80A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

在庫2,496

IPG20N04S412ATMA1

Infineon Technologies

MOSFET 2N-CH 8TDSON

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 12.2 mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 4V @ 15µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 25V
Power - Max: 41W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-TDSON-8-4

パッケージ: 8-PowerVDFN

在庫3,664

BDP948H6433XTMA1

Infineon Technologies

TRANS PNP 45V 3A SOT223

Transistor Type: PNP
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Power - Max: 5W
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: PG-SOT223-4

パッケージ: TO-261-4, TO-261AA

在庫4,592

BCR 148L3 E6327

Infineon Technologies

TRANS PREBIAS NPN 250MW TSLP-3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 100MHz
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: PG-TSLP-3

パッケージ: SC-101, SOT-883

在庫7,264

BAS 16-02V E6327

Infineon Technologies

DIODE GEN PURP 80V 200MA SC79-2

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io): 200mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 1µA @ 75V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: PG-SC79-2
Operating Temperature - Junction: 150°C (Max)

パッケージ: SC-79, SOD-523

在庫4,864

SMBD7000E6327HTSA1

Infineon Technologies

DIODE ARRAY GP 100V 200MA SOT23

Diode Configuration: 1 Pair Series Connection
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 500nA @ 100V
Operating Temperature - Junction: 150°C (Max)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

パッケージ: TO-236-3, SC-59, SOT-23-3

在庫255,624

TLE4270-2D

Infineon Technologies

IC REG LIN 5V 650MA TO252-5-11

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 42V
Voltage - Output (Min/Fixed): 5V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.7V @ 550mA
Current - Output: 650mA
Current - Quiescent (Iq): -
Current - Supply (Max): 1.5mA ~ 90mA
PSRR: 54dB (100Hz)
Control Features: Reset
Protection Features: Over Current, Over Temperature, Over Voltage, Reverse Polarity, Short Circuit, Transient Voltage
Operating Temperature: -40°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Supplier Device Package: PG-TO252-5-11

パッケージ: TO-252-5, DPak (4 Leads + Tab), TO-252AD

在庫114,708

XC835MT2FGIABFXUMA1

Infineon Technologies

IC MCU 8BIT 8KB FLASH PDSO24

Core Processor: XC800
Core Size: 8-Bit
Speed: 24MHz
Connectivity: I2C, SSC, UART/USART
Peripherals: Brown-out Detect/Reset, LED, POR, PWM, WDT
Number of I/O: 21
Program Memory Size: 8KB (8K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 512 x 8
Voltage - Supply (Vcc/Vdd): 2.5 V ~ 5.5 V
Data Converters: A/D 8x10b
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Supplier Device Package: P-DSO-24

パッケージ: 24-SOIC (0.295", 7.50mm Width)

在庫3,520

XC2733X20F66LRAAKXUMA1

Infineon Technologies

IC MCU 16BIT 166KB FLASH 64LQFP

Core Processor: C166SV2
Core Size: 16/32-Bit
Speed: 66MHz
Connectivity: CAN, EBI/EMI, I2C, LIN, SPI, UART/USART
Peripherals: I2S, POR, PWM, WDT
Number of I/O: 48
Program Memory Size: 166KB (166K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 12K x 8
Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
Data Converters: A/D 19x12b
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: -
Package / Case: 64-LQFP Exposed Pad
Supplier Device Package: PG-LQFP-64

パッケージ: 64-LQFP Exposed Pad

在庫4,112

KP214F2611XTMA1

Infineon Technologies

IC ANLG ABSOLUTE PRES SNSR DSOF8

Pressure Type: -
Operating Pressure: -
Output Type: -
Output: -
Accuracy: -
Voltage - Supply: -
Port Size: -
Port Style: -
Features: -
Termination Style: -
Maximum Pressure: -
Operating Temperature: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫7,488

TLE4928CNE6947HAMA1

Infineon Technologies

MAGNETIC SWITCH BIPOLAR 3SSO

Function: Bipolar Switch
Technology: Hall Effect
Polarization: North Pole, South Pole
Sensing Range: -
Test Condition: -
Voltage - Supply: -
Current - Supply (Max): -
Current - Output (Max): -
Output Type: Open Drain
Features: -
Operating Temperature: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫3,042

TLE4905LHALA1

Infineon Technologies

MAGNETIC SWITCH UNIPOL PSSO-3-2

Function: Unipolar Switch
Technology: Hall Effect
Polarization: South Pole
Sensing Range: 18mT Trip, 5mT Release
Test Condition: 25°C
Voltage - Supply: 3.8 V ~ 24 V
Current - Supply (Max): 8mA
Current - Output (Max): 100mA
Output Type: Open Collector
Features: Temperature Compensated
Operating Temperature: -40°C ~ 150°C (TJ)
Package / Case: 3-SIP, SSO-3-02
Supplier Device Package: P-SSO-3-2

パッケージ: 3-SIP, SSO-3-02

在庫96,000

IR3566AMIS01TRP

Infineon Technologies

IC REG BUCK 48VQFN

Output Type: -
Function: -
Output Configuration: -
Topology: -
Number of Outputs: -
Output Phases: -
Voltage - Supply (Vcc/Vdd): -
Frequency - Switching: -
Duty Cycle (Max): -
Synchronous Rectifier: -
Clock Sync: -
Serial Interfaces: -
Control Features: -
Operating Temperature: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫72,000

TLE42712SNKSA1

Infineon Technologies

IC REG LIN 5V 550MA TO220-7-12

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 40V
Voltage - Output (Min/Fixed): 5V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.7V @ 550mA
Current - Output: 550mA
Current - Quiescent (Iq): 6µA
Current - Supply (Max): 90mA
PSRR: 54dB (100Hz)
Control Features: Reset, Watchdog
Protection Features: Over Current, Over Temperature, Over Voltage, Reverse Polarity, Short Circuit
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-7
Supplier Device Package: PG-TO-220-7-12

パッケージ: TO-220-7

在庫4,368

XC2060M104F80LAAKXUMA1

Infineon Technologies

IC MCU 16BIT 100LQFP

Core Processor: -
Core Size: -
Speed: -
Connectivity: -
Peripherals: -
Number of I/O: -
Program Memory Size: -
Program Memory Type: -
EEPROM Size: -
RAM Size: -
Voltage - Supply (Vcc/Vdd): -
Data Converters: -
Oscillator Type: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫4,880

AIMZH120R060M1TXKSA1

Infineon Technologies

SIC_DISCRETE

FET Type: N-Channel
Technology: SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs(th) (Max) @ Id: 5.1V @ 4.3mA
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 800 V
Vgs (Max): +23V, -5V
FET Feature: -
Power Dissipation (Max): 197W (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 13A, 20V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-4-11
Package / Case: TO-247-4

パッケージ: -

在庫111

CY27410LTXI-007

Infineon Technologies

IC SS CLOCK GENERATOR 48QFN

Type: Spread Spectrum Clock Generator
PLL: Yes with Bypass
Input: LVCMOS, Crystal
Output: CML, HCSL, LVCMOS, LVDS, LVPECL
Number of Circuits: 1
Ratio - Input:Output: 3:12
Differential - Input:Output: Yes/Yes
Frequency - Max: 250MHz, 700MHz
Divider/Multiplier: Yes/No
Voltage - Supply: 1.71V ~ 1.89V, 2.25V ~ 2.75V, 3.13V ~ 3.46V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Supplier Device Package: 48-QFN (7x7)

パッケージ: -

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CY8C4246AZI-L435

Infineon Technologies

IC MCU 32BIT 64KB FLASH 64TQFP

Core Processor: ARM® Cortex®-M0
Core Size: 32-Bit Single-Core
Speed: 48MHz
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, SmartSense, WDT
Number of I/O: 53
Program Memory Size: 64KB (64K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 8K x 8
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Data Converters: A/D 16x12b; D/A 2x7b, 2x8b
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Supplier Device Package: 64-TQFP (10x10)

パッケージ: -

Request a Quote

CY9AF111NABGL-GK9E1

Infineon Technologies

IC MCU 32BIT 64KB FLASH 112BGA

Core Processor: ARM® Cortex®-M3
Core Size: 32-Bit Single-Core
Speed: 40MHz
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Number of I/O: 83
Program Memory Size: 64KB (64K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 16K x 8
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Data Converters: A/D 16x12b
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 112-LFBGA
Supplier Device Package: 112-PFBGA (10x10)

パッケージ: -

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IRF9393TRPBFXTMA1

Infineon Technologies

TRENCH <= 40V

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 20V
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 25 V
Vgs (Max): ±25V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 13.3mOhm @ 9.2A, 20V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)

パッケージ: -

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CY7C652148-24LTXI

Infineon Technologies

USB Full-Speed Peripherals

Protocol: USB
Function: Bridge
Interface: GPIO, SPI
Standards: USB 2.0
Voltage - Supply: 1.71V ~ 1.89V, 2V ~ 3.45V, 3.15V ~ 5.25V, 4.35V ~ 5.5V
Current - Supply: 20mA
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 24-UFQFN Exposed Pad
Supplier Device Package: 24-QFN (4x4)

パッケージ: -

在庫7,242

CYT2B77CADQ0AZEGS

Infineon Technologies

IC MCU 32BT 1.0625MB FLSH 144QFP

Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Core Size: 32-Bit Dual-Core
Speed: 100MHz, 160MHz
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Number of I/O: 122
Program Memory Size: 1.0625MB (1.0625M x 8)
Program Memory Type: FLASH
EEPROM Size: 96K x 8
RAM Size: 128K x 8
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Data Converters: A/D 72x12b SAR
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 144-LQFP
Supplier Device Package: 144-LQFP (20x20)

パッケージ: -

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BFR92PE6530HTSA1

Infineon Technologies

RF LOW-NOISE SI TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

Request a Quote

CY8C4124PVA-S432T

Infineon Technologies

PSOC4 - GENERAL

Core Processor: ARM® Cortex®-M0+
Core Size: 32-Bit
Speed: 24MHz
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Number of I/O: 24
Program Memory Size: 16KB (16K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 4K x 8
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Supplier Device Package: 28-SSOP

パッケージ: -

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IRF8721TRPBFXTMA1

Infineon Technologies

TRENCH <= 40V

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

パッケージ: -

在庫12,000