ページ 2 - Microsemi Corporation 製品 - トランジスタ - IGBT - シングル | Heisener Electronics
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Microsemi Corporation 製品 - トランジスタ - IGBT - シングル

レコード 144
ページ  2/5
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パッケージ
在庫
数量
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
APT80GA60B
Microsemi Corporation

IGBT 600V 143A 625W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 143A
  • Current - Collector Pulsed (Icm): 240A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 47A
  • Power - Max: 625W
  • Switching Energy: 840µJ (on), 751µJ (off)
  • Input Type: Standard
  • Gate Charge: 230nC
  • Td (on/off) @ 25°C: 23ns/158ns
  • Test Condition: 400V, 47A, 4.7 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
パッケージ: TO-247-3
在庫6,272
600V
143A
240A
2.5V @ 15V, 47A
625W
840µJ (on), 751µJ (off)
Standard
230nC
23ns/158ns
400V, 47A, 4.7 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
APT40GR120S
Microsemi Corporation

IGBT 1200V 88A 500W D3PAK

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 88A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 40A
  • Power - Max: 500W
  • Switching Energy: 1.38mJ (on), 906µJ (off)
  • Input Type: Standard
  • Gate Charge: 210nC
  • Td (on/off) @ 25°C: 22ns/163ns
  • Test Condition: 600V, 40A, 4.3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D3Pak
パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
在庫3,536
1200V
88A
160A
3.2V @ 15V, 40A
500W
1.38mJ (on), 906µJ (off)
Standard
210nC
22ns/163ns
600V, 40A, 4.3 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D3Pak
hot APT25GT120BRDQ2G
Microsemi Corporation

IGBT 1200V 54A 347W TO247

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 54A
  • Current - Collector Pulsed (Icm): 75A
  • Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 25A
  • Power - Max: 347W
  • Switching Energy: 930µJ (on), 720µJ (off)
  • Input Type: Standard
  • Gate Charge: 170nC
  • Td (on/off) @ 25°C: 14ns/150ns
  • Test Condition: 800V, 25A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
パッケージ: TO-247-3
在庫14,784
1200V
54A
75A
3.7V @ 15V, 25A
347W
930µJ (on), 720µJ (off)
Standard
170nC
14ns/150ns
800V, 25A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
APT40GR120B
Microsemi Corporation

IGBT 1200V 88A 500W TO247

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 88A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 40A
  • Power - Max: 500W
  • Switching Energy: 1.38mJ (on), 906µJ (off)
  • Input Type: Standard
  • Gate Charge: 210nC
  • Td (on/off) @ 25°C: 22ns/163ns
  • Test Condition: 600V, 40A, 4.3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
パッケージ: TO-247-3
在庫4,544
1200V
88A
160A
3.2V @ 15V, 40A
500W
1.38mJ (on), 906µJ (off)
Standard
210nC
22ns/163ns
600V, 40A, 4.3 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
hot APT50GT60BRDQ2G
Microsemi Corporation

IGBT 600V 110A 446W TO247

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 110A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
  • Power - Max: 446W
  • Switching Energy: 995µJ (on), 1070µJ (off)
  • Input Type: Standard
  • Gate Charge: 240nC
  • Td (on/off) @ 25°C: 14ns/240ns
  • Test Condition: 400V, 50A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 22ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
パッケージ: TO-247-3
在庫46,020
600V
110A
150A
2.5V @ 15V, 50A
446W
995µJ (on), 1070µJ (off)
Standard
240nC
14ns/240ns
400V, 50A, 5 Ohm, 15V
22ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
APT80GA60LD40
Microsemi Corporation

IGBT 600V 143A 625W TO264

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 143A
  • Current - Collector Pulsed (Icm): 240A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 47A
  • Power - Max: 625W
  • Switching Energy: 840µJ (on), 751µJ (off)
  • Input Type: Standard
  • Gate Charge: 230nC
  • Td (on/off) @ 25°C: 23ns/158ns
  • Test Condition: 400V, 47A, 4.7 Ohm, 15V
  • Reverse Recovery Time (trr): 22ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264
パッケージ: TO-264-3, TO-264AA
在庫4,064
600V
143A
240A
2.5V @ 15V, 47A
625W
840µJ (on), 751µJ (off)
Standard
230nC
23ns/158ns
400V, 47A, 4.7 Ohm, 15V
22ns
-55°C ~ 150°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264
APT75GN60LDQ3G
Microsemi Corporation

IGBT 600V 155A 536W TO264

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 155A
  • Current - Collector Pulsed (Icm): 225A
  • Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 75A
  • Power - Max: 536W
  • Switching Energy: 2500µJ (on), 2140µJ (off)
  • Input Type: Standard
  • Gate Charge: 485nC
  • Td (on/off) @ 25°C: 47ns/385ns
  • Test Condition: 400V, 75A, 1 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264 [L]
パッケージ: TO-264-3, TO-264AA
在庫4,464
600V
155A
225A
1.85V @ 15V, 75A
536W
2500µJ (on), 2140µJ (off)
Standard
485nC
47ns/385ns
400V, 75A, 1 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264 [L]
APT30GT60BRDQ2G
Microsemi Corporation

IGBT 600V 64A 250W TO247

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 64A
  • Current - Collector Pulsed (Icm): 110A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
  • Power - Max: 250W
  • Switching Energy: 80µJ (on), 605µJ (off)
  • Input Type: Standard
  • Gate Charge: 7.5nC
  • Td (on/off) @ 25°C: 12ns/225ns
  • Test Condition: 400V, 30A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 22ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
パッケージ: TO-247-3
在庫4,960
600V
64A
110A
2.5V @ 15V, 30A
250W
80µJ (on), 605µJ (off)
Standard
7.5nC
12ns/225ns
400V, 30A, 10 Ohm, 15V
22ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
hot APT15GP90BDQ1G
Microsemi Corporation

IGBT 900V 43A 250W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 900V
  • Current - Collector (Ic) (Max): 43A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 15A
  • Power - Max: 250W
  • Switching Energy: 200µJ (off)
  • Input Type: Standard
  • Gate Charge: 60nC
  • Td (on/off) @ 25°C: 9ns/33ns
  • Test Condition: 600V, 15A, 4.3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
パッケージ: TO-247-3
在庫19,560
900V
43A
60A
3.9V @ 15V, 15A
250W
200µJ (off)
Standard
60nC
9ns/33ns
600V, 15A, 4.3 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
APT54GA60B
Microsemi Corporation

IGBT 600V 96A 416W TO-247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 96A
  • Current - Collector Pulsed (Icm): 161A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 32A
  • Power - Max: 416W
  • Switching Energy: 534µJ (on), 466µJ (off)
  • Input Type: Standard
  • Gate Charge: 158nC
  • Td (on/off) @ 25°C: 17ns/112ns
  • Test Condition: 400V, 32A, 4.7 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
パッケージ: TO-247-3
在庫4,736
600V
96A
161A
2.5V @ 15V, 32A
416W
534µJ (on), 466µJ (off)
Standard
158nC
17ns/112ns
400V, 32A, 4.7 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
APT20GT60BRG
Microsemi Corporation

IGBT 600V 43A 174W TO247

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 43A
  • Current - Collector Pulsed (Icm): 80A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
  • Power - Max: 174W
  • Switching Energy: 215µJ (on), 245µJ (off)
  • Input Type: Standard
  • Gate Charge: 100nC
  • Td (on/off) @ 25°C: 8ns/80ns
  • Test Condition: 400V, 20A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
パッケージ: TO-247-3
在庫3,792
600V
43A
80A
2.5V @ 15V, 20A
174W
215µJ (on), 245µJ (off)
Standard
100nC
8ns/80ns
400V, 20A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
APT15GP60BG
Microsemi Corporation

IGBT 600V 56A 250W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 56A
  • Current - Collector Pulsed (Icm): 65A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 15A
  • Power - Max: 250W
  • Switching Energy: 130µJ (on), 121µJ (off)
  • Input Type: Standard
  • Gate Charge: 55nC
  • Td (on/off) @ 25°C: 8ns/29ns
  • Test Condition: 400V, 15A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
パッケージ: TO-247-3
在庫6,180
600V
56A
65A
2.7V @ 15V, 15A
250W
130µJ (on), 121µJ (off)
Standard
55nC
8ns/29ns
400V, 15A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
APT35GA90B
Microsemi Corporation

IGBT 900V 63A 290W TO-247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 900V
  • Current - Collector (Ic) (Max): 63A
  • Current - Collector Pulsed (Icm): 105A
  • Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 18A
  • Power - Max: 290W
  • Switching Energy: 642µJ (on), 382µJ (off)
  • Input Type: Standard
  • Gate Charge: 84nC
  • Td (on/off) @ 25°C: 12ns/104ns
  • Test Condition: 600V, 18A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
パッケージ: TO-247-3
在庫7,408
900V
63A
105A
3.1V @ 15V, 18A
290W
642µJ (on), 382µJ (off)
Standard
84nC
12ns/104ns
600V, 18A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
APT102GA60L
Microsemi Corporation

IGBT 600V 183A 780W TO264

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 183A
  • Current - Collector Pulsed (Icm): 307A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 62A
  • Power - Max: 780W
  • Switching Energy: 1.354mJ (on), 1.614mJ (off)
  • Input Type: Standard
  • Gate Charge: 294nC
  • Td (on/off) @ 25°C: 28ns/212ns
  • Test Condition: 400V, 62A, 4.7 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264 [L]
パッケージ: TO-264-3, TO-264AA
在庫5,040
600V
183A
307A
2.5V @ 15V, 62A
780W
1.354mJ (on), 1.614mJ (off)
Standard
294nC
28ns/212ns
400V, 62A, 4.7 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264 [L]
APT70GR120L
Microsemi Corporation

IGBT 1200V 160A 961W TO264

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 160A
  • Current - Collector Pulsed (Icm): 280A
  • Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 70A
  • Power - Max: 961W
  • Switching Energy: 3.82mJ (on), 2.58mJ (off)
  • Input Type: Standard
  • Gate Charge: 544nC
  • Td (on/off) @ 25°C: 33ns/278ns
  • Test Condition: 600V, 70A, 4.3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264
パッケージ: TO-264-3, TO-264AA
在庫6,528
1200V
160A
280A
3.2V @ 15V, 70A
961W
3.82mJ (on), 2.58mJ (off)
Standard
544nC
33ns/278ns
600V, 70A, 4.3 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264
APT25GR120BD15
Microsemi Corporation

IGBT 1200V 75A 521W TO247

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 100A
  • Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A
  • Power - Max: 521W
  • Switching Energy: 742µJ (on), 427µJ (off)
  • Input Type: Standard
  • Gate Charge: 203nC
  • Td (on/off) @ 25°C: 16ns/122ns
  • Test Condition: 600V, 25A, 4.3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
パッケージ: TO-247-3
在庫4,640
1200V
75A
100A
3.2V @ 15V, 25A
521W
742µJ (on), 427µJ (off)
Standard
203nC
16ns/122ns
600V, 25A, 4.3 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
APT50GF120LRG
Microsemi Corporation

IGBT 1200V 135A 781W TO264

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 135A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 50A
  • Power - Max: 781W
  • Switching Energy: 3.6mJ (on), 2.64mJ (off)
  • Input Type: Standard
  • Gate Charge: 340nC
  • Td (on/off) @ 25°C: 25ns/260ns
  • Test Condition: 800V, 50A, 1 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264 [L]
パッケージ: TO-264-3, TO-264AA
在庫5,040
1200V
135A
150A
3V @ 15V, 50A
781W
3.6mJ (on), 2.64mJ (off)
Standard
340nC
25ns/260ns
800V, 50A, 1 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264 [L]
APT35GP120B2DQ2G
Microsemi Corporation

IGBT 1200V 96A 543W TMAX

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 96A
  • Current - Collector Pulsed (Icm): 140A
  • Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 35A
  • Power - Max: 543W
  • Switching Energy: 750µJ (on), 680µJ (off)
  • Input Type: Standard
  • Gate Charge: 150nC
  • Td (on/off) @ 25°C: 16ns/95ns
  • Test Condition: 600V, 35A, 4.3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3 Variant
  • Supplier Device Package: -
パッケージ: TO-247-3 Variant
在庫7,968
1200V
96A
140A
3.9V @ 15V, 35A
543W
750µJ (on), 680µJ (off)
Standard
150nC
16ns/95ns
600V, 35A, 4.3 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3 Variant
-
hot APT35GP120BG
Microsemi Corporation

IGBT 1200V 96A 543W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 96A
  • Current - Collector Pulsed (Icm): 140A
  • Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 35A
  • Power - Max: 543W
  • Switching Energy: 750µJ (on), 680µJ (off)
  • Input Type: Standard
  • Gate Charge: 150nC
  • Td (on/off) @ 25°C: 16ns/94ns
  • Test Condition: 600V, 35A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
パッケージ: TO-247-3
在庫50,124
1200V
96A
140A
3.9V @ 15V, 35A
543W
750µJ (on), 680µJ (off)
Standard
150nC
16ns/94ns
600V, 35A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
APT40GP90BG
Microsemi Corporation

IGBT 900V 100A 543W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 900V
  • Current - Collector (Ic) (Max): 100A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 40A
  • Power - Max: 543W
  • Switching Energy: 825µJ (off)
  • Input Type: Standard
  • Gate Charge: 145nC
  • Td (on/off) @ 25°C: 16ns/75ns
  • Test Condition: 600V, 40A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
パッケージ: TO-247-3
在庫4,256
900V
100A
160A
3.9V @ 15V, 40A
543W
825µJ (off)
Standard
145nC
16ns/75ns
600V, 40A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
hot APT40GP60B2DQ2G
Microsemi Corporation

IGBT 600V 100A 543W TMAX

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 100A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A
  • Power - Max: 543W
  • Switching Energy: 385µJ (on), 350µJ (off)
  • Input Type: Standard
  • Gate Charge: 135nC
  • Td (on/off) @ 25°C: 20ns/64ns
  • Test Condition: 400V, 40A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3 Variant
  • Supplier Device Package: -
パッケージ: TO-247-3 Variant
在庫4,352
600V
100A
160A
2.7V @ 15V, 40A
543W
385µJ (on), 350µJ (off)
Standard
135nC
20ns/64ns
400V, 40A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3 Variant
-
APT40GR120B2D30
Microsemi Corporation

IGBT 1200V 88A 500W TO247

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 88A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 40A
  • Power - Max: 500W
  • Switching Energy: 1.38mJ (on), 906µJ (off)
  • Input Type: Standard
  • Gate Charge: 210nC
  • Td (on/off) @ 25°C: 22ns/163ns
  • Test Condition: 600V, 40A, 4.3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
パッケージ: TO-247-3
在庫5,712
1200V
88A
160A
3.2V @ 15V, 40A
500W
1.38mJ (on), 906µJ (off)
Standard
210nC
22ns/163ns
600V, 40A, 4.3 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
APT100GN60B2G
Microsemi Corporation

IGBT 600V 229A 625W TMAX

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 229A
  • Current - Collector Pulsed (Icm): 300A
  • Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 100A
  • Power - Max: 625W
  • Switching Energy: 4.7mJ (on), 2.675mJ (off)
  • Input Type: Standard
  • Gate Charge: 600nC
  • Td (on/off) @ 25°C: 31ns/310ns
  • Test Condition: 400V, 100A, 1 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3 Variant
  • Supplier Device Package: -
パッケージ: TO-247-3 Variant
在庫7,408
600V
229A
300A
1.85V @ 15V, 100A
625W
4.7mJ (on), 2.675mJ (off)
Standard
600nC
31ns/310ns
400V, 100A, 1 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3 Variant
-
APT95GR65B2
Microsemi Corporation

IGBT 650V 208A 892W T-MAX

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 208A
  • Current - Collector Pulsed (Icm): 400A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 95A
  • Power - Max: 892W
  • Switching Energy: 3.12mJ (on), 2.55mJ (off)
  • Input Type: Standard
  • Gate Charge: 420nC
  • Td (on/off) @ 25°C: 29ns/226ns
  • Test Condition: 433V, 95A, 4.3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: T-MAX? [B2]
パッケージ: TO-247-3
在庫4,432
650V
208A
400A
2.4V @ 15V, 95A
892W
3.12mJ (on), 2.55mJ (off)
Standard
420nC
29ns/226ns
433V, 95A, 4.3 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
T-MAX? [B2]
APT43GA90BD30
Microsemi Corporation

IGBT 900V 78A 337W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 900V
  • Current - Collector (Ic) (Max): 78A
  • Current - Collector Pulsed (Icm): 129A
  • Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 47A
  • Power - Max: 337W
  • Switching Energy: 875µJ (on), 425µJ (off)
  • Input Type: Standard
  • Gate Charge: 116nC
  • Td (on/off) @ 25°C: 12ns/82ns
  • Test Condition: 600V, 25A, 4.7 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
パッケージ: TO-247-3
在庫6,084
900V
78A
129A
3.1V @ 15V, 47A
337W
875µJ (on), 425µJ (off)
Standard
116nC
12ns/82ns
600V, 25A, 4.7 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
APT36GA60BD15
Microsemi Corporation

IGBT 600V 65A 290W TO-247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 65A
  • Current - Collector Pulsed (Icm): 109A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
  • Power - Max: 290W
  • Switching Energy: 307µJ (on), 254µJ (off)
  • Input Type: Standard
  • Gate Charge: 18nC
  • Td (on/off) @ 25°C: 16ns/122ns
  • Test Condition: 400V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
パッケージ: TO-247-3
在庫7,056
600V
65A
109A
2.5V @ 15V, 20A
290W
307µJ (on), 254µJ (off)
Standard
18nC
16ns/122ns
400V, 20A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
APT30GS60BRDQ2G
Microsemi Corporation

IGBT 600V 54A 250W SOT227

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 54A
  • Current - Collector Pulsed (Icm): 113A
  • Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 30A
  • Power - Max: 250W
  • Switching Energy: 570µJ (off)
  • Input Type: Standard
  • Gate Charge: 145nC
  • Td (on/off) @ 25°C: 16ns/360ns
  • Test Condition: 400V, 30A, 9.1 Ohm, 15V
  • Reverse Recovery Time (trr): 25ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
パッケージ: TO-247-3
在庫5,936
600V
54A
113A
3.15V @ 15V, 30A
250W
570µJ (off)
Standard
145nC
16ns/360ns
400V, 30A, 9.1 Ohm, 15V
25ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
APT35GA90BD15
Microsemi Corporation

IGBT 900V 63A 290W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 900V
  • Current - Collector (Ic) (Max): 63A
  • Current - Collector Pulsed (Icm): 105A
  • Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 18A
  • Power - Max: 290W
  • Switching Energy: 642µJ (on), 382µJ (off)
  • Input Type: Standard
  • Gate Charge: 84nC
  • Td (on/off) @ 25°C: 12ns/104ns
  • Test Condition: 600V, 18A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
パッケージ: TO-247-3
在庫7,296
900V
63A
105A
3.1V @ 15V, 18A
290W
642µJ (on), 382µJ (off)
Standard
84nC
12ns/104ns
600V, 18A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
APT43GA90B
Microsemi Corporation

IGBT 900V 78A 337W TO-247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 900V
  • Current - Collector (Ic) (Max): 78A
  • Current - Collector Pulsed (Icm): 129A
  • Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 25A
  • Power - Max: 337W
  • Switching Energy: 875µJ (on), 425µJ (off)
  • Input Type: Standard
  • Gate Charge: 116nC
  • Td (on/off) @ 25°C: 12ns/82ns
  • Test Condition: 600V, 25A, 4.7 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
パッケージ: TO-247-3
在庫4,016
900V
78A
129A
3.1V @ 15V, 25A
337W
875µJ (on), 425µJ (off)
Standard
116nC
12ns/82ns
600V, 25A, 4.7 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
hot APT20GT60BRDQ1G
Microsemi Corporation

IGBT 600V 43A 174W TO247

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 43A
  • Current - Collector Pulsed (Icm): 80A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
  • Power - Max: 174W
  • Switching Energy: 215µJ (on), 245µJ (off)
  • Input Type: Standard
  • Gate Charge: 100nC
  • Td (on/off) @ 25°C: 8ns/80ns
  • Test Condition: 400V, 20A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
パッケージ: TO-247-3
在庫20,400
600V
43A
80A
2.5V @ 15V, 20A
174W
215µJ (on), 245µJ (off)
Standard
100nC
8ns/80ns
400V, 20A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]