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APT95GR65JDU60

Microsemi Corporation

INSULATED GATE BIPOLAR TRANSISTO

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 135A
Current - Collector Pulsed (Icm): 380A
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 95A
Power - Max: 446W
Switching Energy: -
Input Type: Standard
Gate Charge: 420nC
Td (on/off) @ 25°C: 29ns/226ns
Test Condition: 433V, 95A, 4.3 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227

パッケージ: SOT-227-4, miniBLOC

在庫5,264

650V

135A

380A

2.4V @ 15V, 95A

446W

-

Standard

420nC

29ns/226ns

433V, 95A, 4.3 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Chassis Mount

SOT-227-4, miniBLOC

SOT-227

APT50GP60LDLG

Microsemi Corporation

IGBT 600V 150A 625W TO264

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 150A
Current - Collector Pulsed (Icm): 190A
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
Power - Max: 625W
Switching Energy: 456µJ (on), 635µJ (off)
Input Type: Standard
Gate Charge: 165nC
Td (on/off) @ 25°C: 19ns/85ns
Test Condition: 400V, 50A, 4.3 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264

パッケージ: TO-264-3, TO-264AA

在庫6,432

600V

150A

190A

2.7V @ 15V, 50A

625W

456µJ (on), 635µJ (off)

Standard

165nC

19ns/85ns

400V, 50A, 4.3 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-264-3, TO-264AA

TO-264

APT30GS60KRG

Microsemi Corporation

IGBT 600V 54A 250W TO220

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 54A
Current - Collector Pulsed (Icm): 113A
Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 30A
Power - Max: 250W
Switching Energy: 570µJ (off)
Input Type: Standard
Gate Charge: 145nC
Td (on/off) @ 25°C: 16ns/360ns
Test Condition: 400V, 30A, 9.1 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220

パッケージ: TO-220-3

在庫3,248

600V

54A

113A

3.15V @ 15V, 30A

250W

570µJ (off)

Standard

145nC

16ns/360ns

400V, 30A, 9.1 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220

APT44GA60BD30C

Microsemi Corporation

IGBT 600V 78A 337W TO247

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 78A
Current - Collector Pulsed (Icm): 130A
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 26A
Power - Max: 337W
Switching Energy: 409µJ (on), 450µJ (off)
Input Type: Standard
Gate Charge: 128nC
Td (on/off) @ 25°C: 16ns/102ns
Test Condition: 400V, 26A, 4.7 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 [B]

パッケージ: TO-247-3

在庫587,100

600V

78A

130A

1.6V @ 15V, 26A

337W

409µJ (on), 450µJ (off)

Standard

128nC

16ns/102ns

400V, 26A, 4.7 Ohm, 15V

-

Through Hole

TO-247-3

TO-247 [B]

APT102GA60B2

Microsemi Corporation

IGBT 600V 183A 780W TO247

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 183A
Current - Collector Pulsed (Icm): 307A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 62A
Power - Max: 780W
Switching Energy: 1.354mJ (on), 1.614mJ (off)
Input Type: Standard
Gate Charge: 294nC
Td (on/off) @ 25°C: 28ns/212ns
Test Condition: 400V, 62A, 4.7 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Supplier Device Package: -

パッケージ: TO-247-3 Variant

在庫4,640

600V

183A

307A

2.5V @ 15V, 62A

780W

1.354mJ (on), 1.614mJ (off)

Standard

294nC

28ns/212ns

400V, 62A, 4.7 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3 Variant

-

APT75GN60B2DQ3G

Microsemi Corporation

IGBT 600V 155A 536W TO264

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 155A
Current - Collector Pulsed (Icm): 225A
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 75A
Power - Max: 536W
Switching Energy: 2500µJ (on), 2140µJ (off)
Input Type: Standard
Gate Charge: 485nC
Td (on/off) @ 25°C: 47ns/385ns
Test Condition: 400V, 75A, 1 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: -

パッケージ: TO-264-3, TO-264AA

在庫2,992

600V

155A

225A

1.85V @ 15V, 75A

536W

2500µJ (on), 2140µJ (off)

Standard

485nC

47ns/385ns

400V, 75A, 1 Ohm, 15V

-

Through Hole

TO-264-3, TO-264AA

-

APT33GF120LRDQ2G

Microsemi Corporation

IGBT 1200V 64A 357W TO264

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 64A
Current - Collector Pulsed (Icm): 75A
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 25A
Power - Max: 357W
Switching Energy: 1.315mJ (on), 1.515mJ (off)
Input Type: Standard
Gate Charge: 170nC
Td (on/off) @ 25°C: 14ns/185ns
Test Condition: 800V, 25A, 4.3 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264 [L]

パッケージ: TO-264-3, TO-264AA

在庫7,888

1200V

64A

75A

3V @ 15V, 25A

357W

1.315mJ (on), 1.515mJ (off)

Standard

170nC

14ns/185ns

800V, 25A, 4.3 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-264-3, TO-264AA

TO-264 [L]

APT30GT60KRG

Microsemi Corporation

IGBT 600V 64A 250W TO220

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 64A
Current - Collector Pulsed (Icm): 110A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Power - Max: 250W
Switching Energy: 525µJ (on), 600µJ (off)
Input Type: Standard
Gate Charge: 145nC
Td (on/off) @ 25°C: 12ns/225ns
Test Condition: 400V, 30A, 10 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220 [K]

パッケージ: TO-220-3

在庫7,408

600V

64A

110A

2.5V @ 15V, 30A

250W

525µJ (on), 600µJ (off)

Standard

145nC

12ns/225ns

400V, 30A, 10 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220 [K]

APT20GF120BRG

Microsemi Corporation

IGBT 1200V 32A 200W TO247

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 32A
Current - Collector Pulsed (Icm): 64A
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 15A
Power - Max: 200W
Switching Energy: 2.7mJ
Input Type: Standard
Gate Charge: 95nC
Td (on/off) @ 25°C: 17ns/105ns
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 [B]

パッケージ: TO-247-3

在庫14,568

1200V

32A

64A

3.2V @ 15V, 15A

200W

2.7mJ

Standard

95nC

17ns/105ns

-

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

TO-247 [B]

APT20GF120BRDQ1G

Microsemi Corporation

IGBT 1200V 36A 200W TO247

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 36A
Current - Collector Pulsed (Icm): 64A
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 15A
Power - Max: 200W
Switching Energy: 895µJ (on), 840µJ (off)
Input Type: Standard
Gate Charge: 100nC
Td (on/off) @ 25°C: 10ns/120ns
Test Condition: 800V, 15A, 4.3 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 [B]

パッケージ: TO-247-3

在庫2,016

1200V

36A

64A

3.2V @ 15V, 15A

200W

895µJ (on), 840µJ (off)

Standard

100nC

10ns/120ns

800V, 15A, 4.3 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

TO-247 [B]

APT15GT60KRG

Microsemi Corporation

IGBT 600V 42A 184W TO220

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 42A
Current - Collector Pulsed (Icm): 45A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Power - Max: 184W
Switching Energy: 150µJ (on), 215µJ (off)
Input Type: Standard
Gate Charge: 75nC
Td (on/off) @ 25°C: 6ns/105ns
Test Condition: 400V, 15A, 10 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220 [K]

パッケージ: TO-220-3

在庫4,976

600V

42A

45A

2.5V @ 15V, 15A

184W

150µJ (on), 215µJ (off)

Standard

75nC

6ns/105ns

400V, 15A, 10 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220 [K]

APT15GP90KG

Microsemi Corporation

IGBT 900V 43A 250W TO220

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 900V
Current - Collector (Ic) (Max): 43A
Current - Collector Pulsed (Icm): 60A
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 15A
Power - Max: 250W
Switching Energy: 200µJ (off)
Input Type: Standard
Gate Charge: 60nC
Td (on/off) @ 25°C: 9ns/33ns
Test Condition: 600V, 15A, 4.3 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220 [K]

パッケージ: TO-220-3

在庫2,016

900V

43A

60A

3.9V @ 15V, 15A

250W

200µJ (off)

Standard

60nC

9ns/33ns

600V, 15A, 4.3 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220 [K]

APT15GP60KG

Microsemi Corporation

IGBT 600V 56A 250W TO220

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 56A
Current - Collector Pulsed (Icm): 65A
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 15A
Power - Max: 250W
Switching Energy: 130µJ (on), 121µJ (off)
Input Type: Standard
Gate Charge: 55nC
Td (on/off) @ 25°C: 8ns/29ns
Test Condition: 400V, 15A, 5 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220 [K]

パッケージ: TO-220-3

在庫2,592

600V

56A

65A

2.7V @ 15V, 15A

250W

130µJ (on), 121µJ (off)

Standard

55nC

8ns/29ns

400V, 15A, 5 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220 [K]

APT15GN120KG

Microsemi Corporation

IGBT 1200V 45A 195W TO220

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 45A
Current - Collector Pulsed (Icm): 45A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Power - Max: 195W
Switching Energy: 410µJ (on), 950µJ (off)
Input Type: Standard
Gate Charge: 90nC
Td (on/off) @ 25°C: 10ns/150ns
Test Condition: 800V, 15A, 4.3 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220 [K]

パッケージ: TO-220-3

在庫5,920

1200V

45A

2.1V @ 15V, 15A

195W

410µJ (on), 950µJ (off)

Standard

90nC

10ns/150ns

800V, 15A, 4.3 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220 [K]

APT13GP120KG

Microsemi Corporation

IGBT 1200V 41A 250W TO220

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 41A
Current - Collector Pulsed (Icm): 50A
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 13A
Power - Max: 250W
Switching Energy: 114µJ (on), 165µJ (off)
Input Type: Standard
Gate Charge: 55nC
Td (on/off) @ 25°C: 9ns/28ns
Test Condition: 600V, 13A, 5 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220 [K]

パッケージ: TO-220-3

在庫3,264

1200V

41A

50A

3.9V @ 15V, 13A

250W

114µJ (on), 165µJ (off)

Standard

55nC

9ns/28ns

600V, 13A, 5 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220 [K]

APT11GF120KRG

Microsemi Corporation

IGBT 1200V 25A 156W TO220

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 25A
Current - Collector Pulsed (Icm): 44A
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 8A
Power - Max: 156W
Switching Energy: 300µJ (on), 285µJ (off)
Input Type: Standard
Gate Charge: 65nC
Td (on/off) @ 25°C: 7ns/100ns
Test Condition: 800V, 8A, 10 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220 [K]

パッケージ: TO-220-3

在庫7,856

1200V

25A

44A

3V @ 15V, 8A

156W

300µJ (on), 285µJ (off)

Standard

65nC

7ns/100ns

800V, 8A, 10 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220 [K]

APT11GF120BRDQ1G

Microsemi Corporation

IGBT 1200V 25A 156W TO247

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 25A
Current - Collector Pulsed (Icm): 24A
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 8A
Power - Max: 156W
Switching Energy: 300µJ (on), 285µJ (off)
Input Type: Standard
Gate Charge: 65nC
Td (on/off) @ 25°C: 7ns/100ns
Test Condition: 800V, 8A, 10 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 [B]

パッケージ: TO-247-3

在庫7,328

1200V

25A

24A

3V @ 15V, 8A

156W

300µJ (on), 285µJ (off)

Standard

65nC

7ns/100ns

800V, 8A, 10 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

TO-247 [B]

APT150GN60LDQ4G

Microsemi Corporation

IGBT 600V 220A 536W TO-264L

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 220A
Current - Collector Pulsed (Icm): 450A
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 150A
Power - Max: 536W
Switching Energy: 8.81mJ (on), 4.295mJ (off)
Input Type: Standard
Gate Charge: 970nC
Td (on/off) @ 25°C: 44ns/430ns
Test Condition: 400V, 150A, 1 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264 [L]

パッケージ: TO-264-3, TO-264AA

在庫5,776

600V

220A

450A

1.85V @ 15V, 150A

536W

8.81mJ (on), 4.295mJ (off)

Standard

970nC

44ns/430ns

400V, 150A, 1 Ohm, 15V

-

-55°C ~ 175°C (TJ)

Through Hole

TO-264-3, TO-264AA

TO-264 [L]

APT50GF120B2RG

Microsemi Corporation

IGBT 1200V 135A 781W TMAX

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 135A
Current - Collector Pulsed (Icm): 150A
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 50A
Power - Max: 781W
Switching Energy: 3.6mJ (on), 2.64mJ (off)
Input Type: Standard
Gate Charge: 340nC
Td (on/off) @ 25°C: 25ns/260ns
Test Condition: 800V, 50A, 1 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Supplier Device Package: -

パッケージ: TO-247-3 Variant

在庫3,504

1200V

135A

150A

3V @ 15V, 50A

781W

3.6mJ (on), 2.64mJ (off)

Standard

340nC

25ns/260ns

800V, 50A, 1 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3 Variant

-

APT50GT120B2RDLG

Microsemi Corporation

IGBT 1200V 106A 694W TO-247

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 106A
Current - Collector Pulsed (Icm): 150A
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
Power - Max: 694W
Switching Energy: 3585µJ (on), 1910µJ (off)
Input Type: Standard
Gate Charge: 240nC
Td (on/off) @ 25°C: 23ns/215ns
Test Condition: 800V, 50A, 4.7 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Supplier Device Package: -

パッケージ: TO-247-3 Variant

在庫6,496

1200V

106A

150A

3.7V @ 15V, 50A

694W

3585µJ (on), 1910µJ (off)

Standard

240nC

23ns/215ns

800V, 50A, 4.7 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3 Variant

-

APT65GP60L2DQ2G

Microsemi Corporation

IGBT 600V 198A 833W TO264

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 198A
Current - Collector Pulsed (Icm): 250A
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 65A
Power - Max: 833W
Switching Energy: 605µJ (on), 895µJ (off)
Input Type: Standard
Gate Charge: 210nC
Td (on/off) @ 25°C: 30ns/90ns
Test Condition: 400V, 65A, 5 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: -

パッケージ: TO-264-3, TO-264AA

在庫17,748

600V

198A

250A

2.7V @ 15V, 65A

833W

605µJ (on), 895µJ (off)

Standard

210nC

30ns/90ns

400V, 65A, 5 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-264-3, TO-264AA

-

APT40GP90B2DQ2G

Microsemi Corporation

IGBT 900V 101A 543W TMAX

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 900V
Current - Collector (Ic) (Max): 101A
Current - Collector Pulsed (Icm): 160A
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 40A
Power - Max: 543W
Switching Energy: 795µJ (off)
Input Type: Standard
Gate Charge: 145nC
Td (on/off) @ 25°C: 14ns/90ns
Test Condition: 600V, 40A, 4.3 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Supplier Device Package: -

パッケージ: TO-247-3 Variant

在庫4,592

900V

101A

160A

3.9V @ 15V, 40A

543W

795µJ (off)

Standard

145nC

14ns/90ns

600V, 40A, 4.3 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3 Variant

-

APT50GT120LRDQ2G

Microsemi Corporation

IGBT 1200V 106A 694W TO264

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 106A
Current - Collector Pulsed (Icm): 150A
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
Power - Max: 694W
Switching Energy: 2585µJ (on), 1910µJ (off)
Input Type: Standard
Gate Charge: 240nC
Td (on/off) @ 25°C: 23ns/215ns
Test Condition: 800V, 50A, 1 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264 [L]

パッケージ: TO-264-3, TO-264AA

在庫7,504

1200V

106A

150A

3.7V @ 15V, 50A

694W

2585µJ (on), 1910µJ (off)

Standard

240nC

23ns/215ns

800V, 50A, 1 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-264-3, TO-264AA

TO-264 [L]

APT100GT60B2RG

Microsemi Corporation

IGBT 600V 148A 500W SOT247

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 148A
Current - Collector Pulsed (Icm): 300A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
Power - Max: 500W
Switching Energy: 3.25mJ (on), 3.125mJ (off)
Input Type: Standard
Gate Charge: 460nC
Td (on/off) @ 25°C: 40ns/320ns
Test Condition: 400V, 100A, 4.3 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Supplier Device Package: -

パッケージ: TO-247-3 Variant

在庫4,512

600V

148A

300A

2.5V @ 15V, 100A

500W

3.25mJ (on), 3.125mJ (off)

Standard

460nC

40ns/320ns

400V, 100A, 4.3 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3 Variant

-

部品番号	メーカ	説明	パッケージ	在庫	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Power - Max	Switching Energy	Input Type	Gate Charge	Td (on/off) @ 25°C	Test Condition	Reverse Recovery Time (trr)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
APT95GR65JDU60	Microsemi Corporation	INSULATED GATE BIPOLAR TRANSISTO IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 135A Current - Collector Pulsed (Icm): 380A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 95A Power - Max: 446W Switching Energy: - Input Type: Standard Gate Charge: 420nC Td (on/off) @ 25°C: 29ns/226ns Test Condition: 433V, 95A, 4.3 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227	パッケージ: SOT-227-4, miniBLOC	在庫5,264	650V	135A	380A	2.4V @ 15V, 95A	446W	-	Standard	420nC	29ns/226ns	433V, 95A, 4.3 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227-4, miniBLOC	SOT-227
APT50GP60LDLG	Microsemi Corporation	IGBT 600V 150A 625W TO264 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 150A Current - Collector Pulsed (Icm): 190A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A Power - Max: 625W Switching Energy: 456µJ (on), 635µJ (off) Input Type: Standard Gate Charge: 165nC Td (on/off) @ 25°C: 19ns/85ns Test Condition: 400V, 50A, 4.3 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Supplier Device Package: TO-264	パッケージ: TO-264-3, TO-264AA	在庫6,432	600V	150A	190A	2.7V @ 15V, 50A	625W	456µJ (on), 635µJ (off)	Standard	165nC	19ns/85ns	400V, 50A, 4.3 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-264-3, TO-264AA	TO-264
APT30GS60KRG	Microsemi Corporation	IGBT 600V 54A 250W TO220 IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 54A Current - Collector Pulsed (Icm): 113A Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 30A Power - Max: 250W Switching Energy: 570µJ (off) Input Type: Standard Gate Charge: 145nC Td (on/off) @ 25°C: 16ns/360ns Test Condition: 400V, 30A, 9.1 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	パッケージ: TO-220-3	在庫3,248	600V	54A	113A	3.15V @ 15V, 30A	250W	570µJ (off)	Standard	145nC	16ns/360ns	400V, 30A, 9.1 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220
APT44GA60BD30C	Microsemi Corporation	IGBT 600V 78A 337W TO247 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 78A Current - Collector Pulsed (Icm): 130A Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 26A Power - Max: 337W Switching Energy: 409µJ (on), 450µJ (off) Input Type: Standard Gate Charge: 128nC Td (on/off) @ 25°C: 16ns/102ns Test Condition: 400V, 26A, 4.7 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	パッケージ: TO-247-3	在庫587,100	600V	78A	130A	1.6V @ 15V, 26A	337W	409µJ (on), 450µJ (off)	Standard	128nC	16ns/102ns	400V, 26A, 4.7 Ohm, 15V	-	-	Through Hole	TO-247-3	TO-247 [B]
APT102GA60B2	Microsemi Corporation	IGBT 600V 183A 780W TO247 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 183A Current - Collector Pulsed (Icm): 307A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 62A Power - Max: 780W Switching Energy: 1.354mJ (on), 1.614mJ (off) Input Type: Standard Gate Charge: 294nC Td (on/off) @ 25°C: 28ns/212ns Test Condition: 400V, 62A, 4.7 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Variant Supplier Device Package: -	パッケージ: TO-247-3 Variant	在庫4,640	600V	183A	307A	2.5V @ 15V, 62A	780W	1.354mJ (on), 1.614mJ (off)	Standard	294nC	28ns/212ns	400V, 62A, 4.7 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3 Variant	-
APT75GN60B2DQ3G	Microsemi Corporation	IGBT 600V 155A 536W TO264 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 155A Current - Collector Pulsed (Icm): 225A Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 75A Power - Max: 536W Switching Energy: 2500µJ (on), 2140µJ (off) Input Type: Standard Gate Charge: 485nC Td (on/off) @ 25°C: 47ns/385ns Test Condition: 400V, 75A, 1 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Supplier Device Package: -	パッケージ: TO-264-3, TO-264AA	在庫2,992	600V	155A	225A	1.85V @ 15V, 75A	536W	2500µJ (on), 2140µJ (off)	Standard	485nC	47ns/385ns	400V, 75A, 1 Ohm, 15V	-	-	Through Hole	TO-264-3, TO-264AA	-
APT33GF120LRDQ2G	Microsemi Corporation	IGBT 1200V 64A 357W TO264 IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 64A Current - Collector Pulsed (Icm): 75A Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 25A Power - Max: 357W Switching Energy: 1.315mJ (on), 1.515mJ (off) Input Type: Standard Gate Charge: 170nC Td (on/off) @ 25°C: 14ns/185ns Test Condition: 800V, 25A, 4.3 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Supplier Device Package: TO-264 [L]	パッケージ: TO-264-3, TO-264AA	在庫7,888	1200V	64A	75A	3V @ 15V, 25A	357W	1.315mJ (on), 1.515mJ (off)	Standard	170nC	14ns/185ns	800V, 25A, 4.3 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-264-3, TO-264AA	TO-264 [L]
APT30GT60KRG	Microsemi Corporation	IGBT 600V 64A 250W TO220 IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 64A Current - Collector Pulsed (Icm): 110A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A Power - Max: 250W Switching Energy: 525µJ (on), 600µJ (off) Input Type: Standard Gate Charge: 145nC Td (on/off) @ 25°C: 12ns/225ns Test Condition: 400V, 30A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220 [K]	パッケージ: TO-220-3	在庫7,408	600V	64A	110A	2.5V @ 15V, 30A	250W	525µJ (on), 600µJ (off)	Standard	145nC	12ns/225ns	400V, 30A, 10 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220 [K]
APT20GF120BRG	Microsemi Corporation	IGBT 1200V 32A 200W TO247 IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 32A Current - Collector Pulsed (Icm): 64A Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 15A Power - Max: 200W Switching Energy: 2.7mJ Input Type: Standard Gate Charge: 95nC Td (on/off) @ 25°C: 17ns/105ns Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	パッケージ: TO-247-3	在庫14,568	1200V	32A	64A	3.2V @ 15V, 15A	200W	2.7mJ	Standard	95nC	17ns/105ns	-	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247 [B]
APT20GF120BRDQ1G	Microsemi Corporation	IGBT 1200V 36A 200W TO247 IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 36A Current - Collector Pulsed (Icm): 64A Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 15A Power - Max: 200W Switching Energy: 895µJ (on), 840µJ (off) Input Type: Standard Gate Charge: 100nC Td (on/off) @ 25°C: 10ns/120ns Test Condition: 800V, 15A, 4.3 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	パッケージ: TO-247-3	在庫2,016	1200V	36A	64A	3.2V @ 15V, 15A	200W	895µJ (on), 840µJ (off)	Standard	100nC	10ns/120ns	800V, 15A, 4.3 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247 [B]
APT15GT60KRG	Microsemi Corporation	IGBT 600V 42A 184W TO220 IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 42A Current - Collector Pulsed (Icm): 45A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A Power - Max: 184W Switching Energy: 150µJ (on), 215µJ (off) Input Type: Standard Gate Charge: 75nC Td (on/off) @ 25°C: 6ns/105ns Test Condition: 400V, 15A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220 [K]	パッケージ: TO-220-3	在庫4,976	600V	42A	45A	2.5V @ 15V, 15A	184W	150µJ (on), 215µJ (off)	Standard	75nC	6ns/105ns	400V, 15A, 10 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220 [K]
APT15GP90KG	Microsemi Corporation	IGBT 900V 43A 250W TO220 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 900V Current - Collector (Ic) (Max): 43A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 15A Power - Max: 250W Switching Energy: 200µJ (off) Input Type: Standard Gate Charge: 60nC Td (on/off) @ 25°C: 9ns/33ns Test Condition: 600V, 15A, 4.3 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220 [K]	パッケージ: TO-220-3	在庫2,016	900V	43A	60A	3.9V @ 15V, 15A	250W	200µJ (off)	Standard	60nC	9ns/33ns	600V, 15A, 4.3 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220 [K]
APT15GP60KG	Microsemi Corporation	IGBT 600V 56A 250W TO220 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 56A Current - Collector Pulsed (Icm): 65A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 15A Power - Max: 250W Switching Energy: 130µJ (on), 121µJ (off) Input Type: Standard Gate Charge: 55nC Td (on/off) @ 25°C: 8ns/29ns Test Condition: 400V, 15A, 5 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220 [K]	パッケージ: TO-220-3	在庫2,592	600V	56A	65A	2.7V @ 15V, 15A	250W	130µJ (on), 121µJ (off)	Standard	55nC	8ns/29ns	400V, 15A, 5 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220 [K]
APT15GN120KG	Microsemi Corporation	IGBT 1200V 45A 195W TO220 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 45A Current - Collector Pulsed (Icm): 45A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A Power - Max: 195W Switching Energy: 410µJ (on), 950µJ (off) Input Type: Standard Gate Charge: 90nC Td (on/off) @ 25°C: 10ns/150ns Test Condition: 800V, 15A, 4.3 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220 [K]	パッケージ: TO-220-3	在庫5,920	1200V	45A	45A	2.1V @ 15V, 15A	195W	410µJ (on), 950µJ (off)	Standard	90nC	10ns/150ns	800V, 15A, 4.3 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220 [K]
APT13GP120KG	Microsemi Corporation	IGBT 1200V 41A 250W TO220 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 41A Current - Collector Pulsed (Icm): 50A Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 13A Power - Max: 250W Switching Energy: 114µJ (on), 165µJ (off) Input Type: Standard Gate Charge: 55nC Td (on/off) @ 25°C: 9ns/28ns Test Condition: 600V, 13A, 5 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220 [K]	パッケージ: TO-220-3	在庫3,264	1200V	41A	50A	3.9V @ 15V, 13A	250W	114µJ (on), 165µJ (off)	Standard	55nC	9ns/28ns	600V, 13A, 5 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220 [K]
APT11GF120KRG	Microsemi Corporation	IGBT 1200V 25A 156W TO220 IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 25A Current - Collector Pulsed (Icm): 44A Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 8A Power - Max: 156W Switching Energy: 300µJ (on), 285µJ (off) Input Type: Standard Gate Charge: 65nC Td (on/off) @ 25°C: 7ns/100ns Test Condition: 800V, 8A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220 [K]	パッケージ: TO-220-3	在庫7,856	1200V	25A	44A	3V @ 15V, 8A	156W	300µJ (on), 285µJ (off)	Standard	65nC	7ns/100ns	800V, 8A, 10 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220 [K]
APT11GF120BRDQ1G	Microsemi Corporation	IGBT 1200V 25A 156W TO247 IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 25A Current - Collector Pulsed (Icm): 24A Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 8A Power - Max: 156W Switching Energy: 300µJ (on), 285µJ (off) Input Type: Standard Gate Charge: 65nC Td (on/off) @ 25°C: 7ns/100ns Test Condition: 800V, 8A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	パッケージ: TO-247-3	在庫7,328	1200V	25A	24A	3V @ 15V, 8A	156W	300µJ (on), 285µJ (off)	Standard	65nC	7ns/100ns	800V, 8A, 10 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247 [B]
APT150GN60LDQ4G	Microsemi Corporation	IGBT 600V 220A 536W TO-264L IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 220A Current - Collector Pulsed (Icm): 450A Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 150A Power - Max: 536W Switching Energy: 8.81mJ (on), 4.295mJ (off) Input Type: Standard Gate Charge: 970nC Td (on/off) @ 25°C: 44ns/430ns Test Condition: 400V, 150A, 1 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Supplier Device Package: TO-264 [L]	パッケージ: TO-264-3, TO-264AA	在庫5,776	600V	220A	450A	1.85V @ 15V, 150A	536W	8.81mJ (on), 4.295mJ (off)	Standard	970nC	44ns/430ns	400V, 150A, 1 Ohm, 15V	-	-55°C ~ 175°C (TJ)	Through Hole	TO-264-3, TO-264AA	TO-264 [L]
APT50GF120B2RG	Microsemi Corporation	IGBT 1200V 135A 781W TMAX IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 135A Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 50A Power - Max: 781W Switching Energy: 3.6mJ (on), 2.64mJ (off) Input Type: Standard Gate Charge: 340nC Td (on/off) @ 25°C: 25ns/260ns Test Condition: 800V, 50A, 1 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Variant Supplier Device Package: -	パッケージ: TO-247-3 Variant	在庫3,504	1200V	135A	150A	3V @ 15V, 50A	781W	3.6mJ (on), 2.64mJ (off)	Standard	340nC	25ns/260ns	800V, 50A, 1 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3 Variant	-
APT50GT120B2RDLG	Microsemi Corporation	IGBT 1200V 106A 694W TO-247 IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 106A Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A Power - Max: 694W Switching Energy: 3585µJ (on), 1910µJ (off) Input Type: Standard Gate Charge: 240nC Td (on/off) @ 25°C: 23ns/215ns Test Condition: 800V, 50A, 4.7 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Variant Supplier Device Package: -	パッケージ: TO-247-3 Variant	在庫6,496	1200V	106A	150A	3.7V @ 15V, 50A	694W	3585µJ (on), 1910µJ (off)	Standard	240nC	23ns/215ns	800V, 50A, 4.7 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3 Variant	-
APT65GP60L2DQ2G	Microsemi Corporation	IGBT 600V 198A 833W TO264 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 198A Current - Collector Pulsed (Icm): 250A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 65A Power - Max: 833W Switching Energy: 605µJ (on), 895µJ (off) Input Type: Standard Gate Charge: 210nC Td (on/off) @ 25°C: 30ns/90ns Test Condition: 400V, 65A, 5 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Supplier Device Package: -	パッケージ: TO-264-3, TO-264AA	在庫17,748	600V	198A	250A	2.7V @ 15V, 65A	833W	605µJ (on), 895µJ (off)	Standard	210nC	30ns/90ns	400V, 65A, 5 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-264-3, TO-264AA	-
APT40GP90B2DQ2G	Microsemi Corporation	IGBT 900V 101A 543W TMAX IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 900V Current - Collector (Ic) (Max): 101A Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 40A Power - Max: 543W Switching Energy: 795µJ (off) Input Type: Standard Gate Charge: 145nC Td (on/off) @ 25°C: 14ns/90ns Test Condition: 600V, 40A, 4.3 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Variant Supplier Device Package: -	パッケージ: TO-247-3 Variant	在庫4,592	900V	101A	160A	3.9V @ 15V, 40A	543W	795µJ (off)	Standard	145nC	14ns/90ns	600V, 40A, 4.3 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3 Variant	-
APT50GT120LRDQ2G	Microsemi Corporation	IGBT 1200V 106A 694W TO264 IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 106A Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A Power - Max: 694W Switching Energy: 2585µJ (on), 1910µJ (off) Input Type: Standard Gate Charge: 240nC Td (on/off) @ 25°C: 23ns/215ns Test Condition: 800V, 50A, 1 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Supplier Device Package: TO-264 [L]	パッケージ: TO-264-3, TO-264AA	在庫7,504	1200V	106A	150A	3.7V @ 15V, 50A	694W	2585µJ (on), 1910µJ (off)	Standard	240nC	23ns/215ns	800V, 50A, 1 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-264-3, TO-264AA	TO-264 [L]
APT100GT60B2RG	Microsemi Corporation	IGBT 600V 148A 500W SOT247 IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 148A Current - Collector Pulsed (Icm): 300A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A Power - Max: 500W Switching Energy: 3.25mJ (on), 3.125mJ (off) Input Type: Standard Gate Charge: 460nC Td (on/off) @ 25°C: 40ns/320ns Test Condition: 400V, 100A, 4.3 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Variant Supplier Device Package: -	パッケージ: TO-247-3 Variant	在庫4,512	600V	148A	300A	2.5V @ 15V, 100A	500W	3.25mJ (on), 3.125mJ (off)	Standard	460nC	40ns/320ns	400V, 100A, 4.3 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3 Variant	-