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Microsemi Corporation 製品 - トランジスタ - IGBT - シングル

レコード 144
ページ  3/5
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部品番号
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説明
パッケージ
在庫
数量
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
APT44GA60BD30
Microsemi Corporation

IGBT 600V 78A 337W TO-247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 78A
  • Current - Collector Pulsed (Icm): 130A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 26A
  • Power - Max: 337W
  • Switching Energy: 409µJ (on), 258µJ (off)
  • Input Type: Standard
  • Gate Charge: 128nC
  • Td (on/off) @ 25°C: 16ns/84ns
  • Test Condition: 400V, 26A, 4.7 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
パッケージ: TO-247-3
在庫4,560
600V
78A
130A
2.5V @ 15V, 26A
337W
409µJ (on), 258µJ (off)
Standard
128nC
16ns/84ns
400V, 26A, 4.7 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
APT45GR65B2DU30
Microsemi Corporation

INSULATED GATE BIPOLAR TRANSISTO

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 118A
  • Current - Collector Pulsed (Icm): 224A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 45A
  • Power - Max: 543W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 203nC
  • Td (on/off) @ 25°C: 15ns/100ns
  • Test Condition: 433V, 45A, 4.3 Ohm, 15V
  • Reverse Recovery Time (trr): 80ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: T-MAX? [B2]
パッケージ: TO-247-3
在庫2,800
650V
118A
224A
2.4V @ 15V, 45A
543W
-
Standard
203nC
15ns/100ns
433V, 45A, 4.3 Ohm, 15V
80ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
T-MAX? [B2]
APT44GA60B
Microsemi Corporation

IGBT 600V 78A 337W TO-247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 78A
  • Current - Collector Pulsed (Icm): 130A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 26A
  • Power - Max: 337W
  • Switching Energy: 409µJ (on), 258µJ (off)
  • Input Type: Standard
  • Gate Charge: 128nC
  • Td (on/off) @ 25°C: 16ns/84ns
  • Test Condition: 400V, 26A, 4.7 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
パッケージ: TO-247-3
在庫6,060
600V
78A
130A
2.5V @ 15V, 26A
337W
409µJ (on), 258µJ (off)
Standard
128nC
16ns/84ns
400V, 26A, 4.7 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
APT30GT60BRG
Microsemi Corporation

IGBT 600V 64A 250W TO247

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 64A
  • Current - Collector Pulsed (Icm): 110A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
  • Power - Max: 250W
  • Switching Energy: 525µJ (on), 600µJ (off)
  • Input Type: Standard
  • Gate Charge: 145nC
  • Td (on/off) @ 25°C: 12ns/225ns
  • Test Condition: 400V, 30A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
パッケージ: TO-247-3
在庫5,872
600V
64A
110A
2.5V @ 15V, 30A
250W
525µJ (on), 600µJ (off)
Standard
145nC
12ns/225ns
400V, 30A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
APT15GN120BDQ1G
Microsemi Corporation

IGBT 1200V 45A 195W TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 45A
  • Current - Collector Pulsed (Icm): 45A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
  • Power - Max: 195W
  • Switching Energy: 410µJ (on), 950µJ (off)
  • Input Type: Standard
  • Gate Charge: 90nC
  • Td (on/off) @ 25°C: 10ns/150ns
  • Test Condition: 800V, 15A, 4.3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
パッケージ: TO-247-3
在庫6,624
1200V
45A
45A
2.1V @ 15V, 15A
195W
410µJ (on), 950µJ (off)
Standard
90nC
10ns/150ns
800V, 15A, 4.3 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
APT13GP120BG
Microsemi Corporation

IGBT 1200V 41A 250W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 41A
  • Current - Collector Pulsed (Icm): 50A
  • Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 13A
  • Power - Max: 250W
  • Switching Energy: 115µJ (on), 165µJ (off)
  • Input Type: Standard
  • Gate Charge: 55nC
  • Td (on/off) @ 25°C: 9ns/28ns
  • Test Condition: 600V, 13A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
パッケージ: TO-247-3
在庫6,944
1200V
41A
50A
3.9V @ 15V, 13A
250W
115µJ (on), 165µJ (off)
Standard
55nC
9ns/28ns
600V, 13A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
APT15GT60BRG
Microsemi Corporation

IGBT 600V 42A 184W TO247

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 42A
  • Current - Collector Pulsed (Icm): 45A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
  • Power - Max: 184W
  • Switching Energy: 150µJ (on), 215µJ (off)
  • Input Type: Standard
  • Gate Charge: 75nC
  • Td (on/off) @ 25°C: 6ns/105ns
  • Test Condition: 400V, 15A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
パッケージ: TO-247-3
在庫6,880
600V
42A
45A
2.5V @ 15V, 15A
184W
150µJ (on), 215µJ (off)
Standard
75nC
6ns/105ns
400V, 15A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
hot APT15GP60BDQ1G
Microsemi Corporation

IGBT 600V 56A 250W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 56A
  • Current - Collector Pulsed (Icm): 65A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 15A
  • Power - Max: 250W
  • Switching Energy: 130µJ (on), 120µJ (off)
  • Input Type: Standard
  • Gate Charge: 55nC
  • Td (on/off) @ 25°C: 8ns/29ns
  • Test Condition: 400V, 15A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
パッケージ: TO-247-3
在庫5,104
600V
56A
65A
2.7V @ 15V, 15A
250W
130µJ (on), 120µJ (off)
Standard
55nC
8ns/29ns
400V, 15A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
APT50GN60BG
Microsemi Corporation

IGBT 600V 107A 366W TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 107A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 50A
  • Power - Max: 366W
  • Switching Energy: 1185µJ (on), 1565µJ (off)
  • Input Type: Standard
  • Gate Charge: 325nC
  • Td (on/off) @ 25°C: 20ns/230ns
  • Test Condition: 400V, 50A, 4.3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
パッケージ: TO-247-3
在庫3,216
600V
107A
150A
1.85V @ 15V, 50A
366W
1185µJ (on), 1565µJ (off)
Standard
325nC
20ns/230ns
400V, 50A, 4.3 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
APT20GN60BDQ1G
Microsemi Corporation

IGBT 600V 40A 136W TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
  • Power - Max: 136W
  • Switching Energy: 230µJ (on), 580µJ (off)
  • Input Type: Standard
  • Gate Charge: 120nC
  • Td (on/off) @ 25°C: 9ns/140ns
  • Test Condition: 400V, 20A, 4.3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
パッケージ: TO-247-3
在庫7,600
600V
40A
60A
1.9V @ 15V, 20A
136W
230µJ (on), 580µJ (off)
Standard
120nC
9ns/140ns
400V, 20A, 4.3 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
APT15GT60BRDQ1G
Microsemi Corporation

IGBT 600V 42A 184W TO247

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 42A
  • Current - Collector Pulsed (Icm): 45A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
  • Power - Max: 184W
  • Switching Energy: 150µJ (on), 215µJ (off)
  • Input Type: Standard
  • Gate Charge: 75nC
  • Td (on/off) @ 25°C: 6ns/105ns
  • Test Condition: 400V, 15A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
パッケージ: TO-247-3
在庫6,352
600V
42A
45A
2.5V @ 15V, 15A
184W
150µJ (on), 215µJ (off)
Standard
75nC
6ns/105ns
400V, 15A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
hot APT30GN60BDQ2G
Microsemi Corporation

IGBT 600V 63A 203W TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 63A
  • Current - Collector Pulsed (Icm): 90A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
  • Power - Max: 203W
  • Switching Energy: 525µJ (on), 700µJ (off)
  • Input Type: Standard
  • Gate Charge: 165nC
  • Td (on/off) @ 25°C: 12ns/155ns
  • Test Condition: 400V, 30A, 4.3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
パッケージ: TO-247-3
在庫19,020
600V
63A
90A
1.9V @ 15V, 30A
203W
525µJ (on), 700µJ (off)
Standard
165nC
12ns/155ns
400V, 30A, 4.3 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
APT20GN60BG
Microsemi Corporation

IGBT 600V 40A 136W TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
  • Power - Max: 136W
  • Switching Energy: 230µJ (on), 580µJ (off)
  • Input Type: Standard
  • Gate Charge: 120nC
  • Td (on/off) @ 25°C: 9ns/140ns
  • Test Condition: 400V, 20A, 4.3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
パッケージ: TO-247-3
在庫4,720
600V
40A
60A
1.9V @ 15V, 20A
136W
230µJ (on), 580µJ (off)
Standard
120nC
9ns/140ns
400V, 20A, 4.3 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
APT30GN60BG
Microsemi Corporation

IGBT 600V 63A 203W TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 63A
  • Current - Collector Pulsed (Icm): 90A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
  • Power - Max: 203W
  • Switching Energy: 525µJ (on), 700µJ (off)
  • Input Type: Standard
  • Gate Charge: 165nC
  • Td (on/off) @ 25°C: 12ns/155ns
  • Test Condition: 400V, 30A, 4.3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
パッケージ: TO-247-3
在庫4,800
600V
63A
90A
1.9V @ 15V, 30A
203W
525µJ (on), 700µJ (off)
Standard
165nC
12ns/155ns
400V, 30A, 4.3 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
APT40GR120B2SCD10
Microsemi Corporation

IGBT 1200V 88A 500W TO247

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 88A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 40A
  • Power - Max: 500W
  • Switching Energy: 929µJ (on), 1070µJ (off)
  • Input Type: Standard
  • Gate Charge: 210nC
  • Td (on/off) @ 25°C: 20ns/166ns
  • Test Condition: 600V, 40A, 4.3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
パッケージ: TO-247-3
在庫7,504
1200V
88A
160A
3.2V @ 15V, 40A
500W
929µJ (on), 1070µJ (off)
Standard
210nC
20ns/166ns
600V, 40A, 4.3 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
APT150GN60B2G
Microsemi Corporation

IGBT 600V 220A 536W SOT227

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 220A
  • Current - Collector Pulsed (Icm): 450A
  • Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 150A
  • Power - Max: 536W
  • Switching Energy: 8.81mJ (on), 4.295mJ (off)
  • Input Type: Standard
  • Gate Charge: 970nC
  • Td (on/off) @ 25°C: 44ns/430ns
  • Test Condition: 400V, 150A, 1 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3 Variant
  • Supplier Device Package: -
パッケージ: TO-247-3 Variant
在庫4,448
600V
220A
450A
1.85V @ 15V, 150A
536W
8.81mJ (on), 4.295mJ (off)
Standard
970nC
44ns/430ns
400V, 150A, 1 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3 Variant
-
APT25GR120SSCD10
Microsemi Corporation

IGBT 1200V 75A 521W D3PAK

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 100A
  • Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A
  • Power - Max: 521W
  • Switching Energy: 434µJ (on), 466µJ (off)
  • Input Type: Standard
  • Gate Charge: 203nC
  • Td (on/off) @ 25°C: 16ns/122ns
  • Test Condition: 600V, 25A, 4.3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Supplier Device Package: D3Pak
パッケージ: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
在庫2,112
1200V
75A
100A
3.2V @ 15V, 25A
521W
434µJ (on), 466µJ (off)
Standard
203nC
16ns/122ns
600V, 25A, 4.3 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
D3Pak
APT50GP60B2DQ2G
Microsemi Corporation

IGBT 600V 150A 625W TMAX

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 150A
  • Current - Collector Pulsed (Icm): 190A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
  • Power - Max: 625W
  • Switching Energy: 465µJ (on), 635µJ (off)
  • Input Type: Standard
  • Gate Charge: 165nC
  • Td (on/off) @ 25°C: 19ns/85ns
  • Test Condition: 400V, 50A, 4.3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3 Variant
  • Supplier Device Package: -
パッケージ: TO-247-3 Variant
在庫6,800
600V
150A
190A
2.7V @ 15V, 50A
625W
465µJ (on), 635µJ (off)
Standard
165nC
19ns/85ns
400V, 50A, 4.3 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3 Variant
-
APT64GA90B2D30
Microsemi Corporation

IGBT 900V 117A 500W TO-247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 900V
  • Current - Collector (Ic) (Max): 117A
  • Current - Collector Pulsed (Icm): 193A
  • Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 38A
  • Power - Max: 500W
  • Switching Energy: 1192µJ (on), 1088µJ (off)
  • Input Type: Standard
  • Gate Charge: 162nC
  • Td (on/off) @ 25°C: 18ns/131ns
  • Test Condition: 600V, 38A, 4.7 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3 Variant
  • Supplier Device Package: -
パッケージ: TO-247-3 Variant
在庫5,136
900V
117A
193A
3.1V @ 15V, 38A
500W
1192µJ (on), 1088µJ (off)
Standard
162nC
18ns/131ns
600V, 38A, 4.7 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3 Variant
-
APT50GR120B2
Microsemi Corporation

IGBT 1200V 117A 694W TO247

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 117A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 50A
  • Power - Max: 694W
  • Switching Energy: 2.14mJ (on), 1.48mJ (off)
  • Input Type: Standard
  • Gate Charge: 445nC
  • Td (on/off) @ 25°C: 28ns/237ns
  • Test Condition: 600V, 50A, 4.3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
パッケージ: TO-247-3
在庫4,176
1200V
117A
200A
3.2V @ 15V, 50A
694W
2.14mJ (on), 1.48mJ (off)
Standard
445nC
28ns/237ns
600V, 50A, 4.3 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
APT50GN120B2G
Microsemi Corporation

IGBT 1200V 134A 543W TO-247

  • IGBT Type: NPT, Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 134A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
  • Power - Max: 543W
  • Switching Energy: 4495µJ (off)
  • Input Type: Standard
  • Gate Charge: 315nC
  • Td (on/off) @ 25°C: 28ns/320ns
  • Test Condition: 800V, 50A, 2.2 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3 Variant
  • Supplier Device Package: -
パッケージ: TO-247-3 Variant
在庫3,808
1200V
134A
150A
2.1V @ 15V, 50A
543W
4495µJ (off)
Standard
315nC
28ns/320ns
800V, 50A, 2.2 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3 Variant
-
hot APT64GA90B
Microsemi Corporation

IGBT 900V 117A 500W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 900V
  • Current - Collector (Ic) (Max): 117A
  • Current - Collector Pulsed (Icm): 193A
  • Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 38A
  • Power - Max: 500W
  • Switching Energy: 1857µJ (on), 2311µJ (off)
  • Input Type: Standard
  • Gate Charge: 162nC
  • Td (on/off) @ 25°C: 18ns/131ns
  • Test Condition: 600V, 38A, 4.7 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
パッケージ: TO-247-3
在庫5,248
900V
117A
193A
3.1V @ 15V, 38A
500W
1857µJ (on), 2311µJ (off)
Standard
162nC
18ns/131ns
600V, 38A, 4.7 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
APT68GA60B
Microsemi Corporation

IGBT 600V 121A 520W TO-247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 121A
  • Current - Collector Pulsed (Icm): 202A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
  • Power - Max: 520W
  • Switching Energy: 715µJ (on), 607µJ (off)
  • Input Type: Standard
  • Gate Charge: 298nC
  • Td (on/off) @ 25°C: 21ns/133ns
  • Test Condition: 400V, 40A, 4.7 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
パッケージ: TO-247-3
在庫7,504
600V
121A
202A
2.5V @ 15V, 40A
520W
715µJ (on), 607µJ (off)
Standard
298nC
21ns/133ns
400V, 40A, 4.7 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
APT25GR120S
Microsemi Corporation

IGBT 1200V 75A 521W D3PAK

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 100A
  • Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A
  • Power - Max: 521W
  • Switching Energy: 742µJ (on), 427µJ (off)
  • Input Type: Standard
  • Gate Charge: 203nC
  • Td (on/off) @ 25°C: 16ns/122ns
  • Test Condition: 600V, 25A, 4.3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Supplier Device Package: D3Pak
パッケージ: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
在庫5,408
1200V
75A
100A
3.2V @ 15V, 25A
521W
742µJ (on), 427µJ (off)
Standard
203nC
16ns/122ns
600V, 25A, 4.3 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
D3Pak
hot APT75GN60BG
Microsemi Corporation

IGBT 600V 155A 536W TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 155A
  • Current - Collector Pulsed (Icm): 225A
  • Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 75A
  • Power - Max: 536W
  • Switching Energy: 2500µJ (on), 2140µJ (off)
  • Input Type: Standard
  • Gate Charge: 485nC
  • Td (on/off) @ 25°C: 47ns/385ns
  • Test Condition: 400V, 75A, 1 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
パッケージ: TO-247-3
在庫22,476
600V
155A
225A
1.85V @ 15V, 75A
536W
2500µJ (on), 2140µJ (off)
Standard
485nC
47ns/385ns
400V, 75A, 1 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
APT25GN120BG
Microsemi Corporation

IGBT 1200V 67A 272W TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 67A
  • Current - Collector Pulsed (Icm): 75A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
  • Power - Max: 272W
  • Switching Energy: 2.15µJ (off)
  • Input Type: Standard
  • Gate Charge: 155nC
  • Td (on/off) @ 25°C: 22ns/280ns
  • Test Condition: 800V, 25A, 1 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
パッケージ: TO-247-3
在庫4,368
1200V
67A
75A
2.1V @ 15V, 25A
272W
2.15µJ (off)
Standard
155nC
22ns/280ns
800V, 25A, 1 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
APT27GA90BD15
Microsemi Corporation

IGBT 900V 48A 223W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 900V
  • Current - Collector (Ic) (Max): 48A
  • Current - Collector Pulsed (Icm): 79A
  • Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 14A
  • Power - Max: 223W
  • Switching Energy: 413µJ (on), 287µJ (off)
  • Input Type: Standard
  • Gate Charge: 62nC
  • Td (on/off) @ 25°C: 9ns/98ns
  • Test Condition: 600V, 14A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
パッケージ: TO-247-3
在庫7,824
900V
48A
79A
3.1V @ 15V, 14A
223W
413µJ (on), 287µJ (off)
Standard
62nC
9ns/98ns
600V, 14A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
APT33GF120B2RDQ2G
Microsemi Corporation

IGBT 1200V 64A 357W TMAX

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 64A
  • Current - Collector Pulsed (Icm): 75A
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 25A
  • Power - Max: 357W
  • Switching Energy: 1.315µJ (on), 1.515µJ (off)
  • Input Type: Standard
  • Gate Charge: 170nC
  • Td (on/off) @ 25°C: 14ns/185ns
  • Test Condition: 800V, 25A, 4.3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3 Variant
  • Supplier Device Package: -
パッケージ: TO-247-3 Variant
在庫5,248
1200V
64A
75A
3V @ 15V, 25A
357W
1.315µJ (on), 1.515µJ (off)
Standard
170nC
14ns/185ns
800V, 25A, 4.3 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3 Variant
-
APT85GR120B2
Microsemi Corporation

IGBT 1200V 170A 962W TO247

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 170A
  • Current - Collector Pulsed (Icm): 340A
  • Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 85A
  • Power - Max: 962W
  • Switching Energy: 6mJ (on), 3.8mJ (off)
  • Input Type: Standard
  • Gate Charge: 660nC
  • Td (on/off) @ 25°C: 43ns/300ns
  • Test Condition: 600V, 85A, 4.3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: T-MAX?
パッケージ: TO-247-3
在庫2,016
1200V
170A
340A
3.2V @ 15V, 85A
962W
6mJ (on), 3.8mJ (off)
Standard
660nC
43ns/300ns
600V, 85A, 4.3 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
T-MAX?
APT85GR120L
Microsemi Corporation

IGBT 1200V 170A 962W TO264

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 170A
  • Current - Collector Pulsed (Icm): 340A
  • Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 85A
  • Power - Max: 962W
  • Switching Energy: 6mJ (on), 3.8mJ (off)
  • Input Type: Standard
  • Gate Charge: 660nC
  • Td (on/off) @ 25°C: 43ns/300ns
  • Test Condition: 600V, 85A, 4.3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264
パッケージ: TO-264-3, TO-264AA
在庫6,816
1200V
170A
340A
3.2V @ 15V, 85A
962W
6mJ (on), 3.8mJ (off)
Standard
660nC
43ns/300ns
600V, 85A, 4.3 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264