ページ 91 - Toshiba Semiconductor and Storage 製品

部品番号	メーカ	説明	パッケージ	在庫
TK5A50D(STA4,Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 500V 5A TO220SIS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	パッケージ: TO-220-3 Full Pack	在庫120,000
TK11A65W,S5X	Toshiba Semiconductor and Storage	MOSFET N-CH 650V 11.1A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 450µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 300V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 390 mOhm @ 5.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack, Isolated Tab	パッケージ: TO-220-3 Full Pack, Isolated Tab	在庫6,992
TK15J60U(F)	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 15A TO-3PN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 10V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 170W (Tc) Rds On (Max) @ Id, Vgs: 300 mOhm @ 7.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P(N) Package / Case: TO-3P-3, SC-65-3	パッケージ: TO-3P-3, SC-65-3	在庫23,100
TPN2R304PL,L1Q	Toshiba Semiconductor and Storage	MOSFET N-CH 40V 80A TSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 0.3mA Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 630mW (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 40A, 10V Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: 8-TSON Advance (3.3x3.3) Package / Case: 8-PowerVDFN	パッケージ: 8-PowerVDFN	在庫4,176
2SB1495,Q(M	Toshiba Semiconductor and Storage	TRANS PNP 3A 100V TO220-3 Transistor Type: PNP Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.5mA, 1.5A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V Power - Max: 2W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	パッケージ: TO-220-3 Full Pack	在庫3,680
2SA965-O(TE6,F,M)	Toshiba Semiconductor and Storage	TRANS PNP 800MA 120V TO226-3 Transistor Type: PNP Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V Power - Max: 900mW Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: LSTM	パッケージ: TO-226-3, TO-92-3 Long Body	在庫5,888
RN1909FE(TE85L,F)	Toshiba Semiconductor and Storage	TRANS 2NPN PREBIAS 0.1W ES6 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 22k DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	パッケージ: SOT-563, SOT-666	在庫3,392
TCV7113F(TE12L,Q)	Toshiba Semiconductor and Storage	IC REG BUCK ADJ 6A SYNC 8SOP-ADV Function: Step-Down Output Configuration: Positive Topology: Buck Output Type: Adjustable Number of Outputs: 1 Voltage - Input (Min): 2.7V Voltage - Input (Max): 5.6V Voltage - Output (Min/Fixed): 0.8V Voltage - Output (Max): 5.6V Current - Output: 6A Frequency - Switching: 1MHz Synchronous Rectifier: Yes Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: 8-SOP Advance (5x5)	パッケージ: 8-PowerVDFN	在庫5,568
TB67S215FTAG,EL	Toshiba Semiconductor and Storage	IC STEP MOTOR DRVR PWM 36WQFN Motor Type - Stepper: Bipolar Motor Type - AC, DC: - Function: Driver - Fully Integrated, Control and Power Stage Output Configuration: Half Bridge (4) Interface: PWM Technology: Power MOSFET Step Resolution: 1, 1/2, 1/4 Applications: General Purpose Current - Output: 2A Voltage - Supply: 4.75 V ~ 5.25 V Voltage - Load: 10 V ~ 35 V Operating Temperature: -20°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 36-WFQFN Exposed Pad Supplier Device Package: 36-WQFN (6x6)	パッケージ: 36-WFQFN Exposed Pad	在庫35,562
TC7SBL66CFU,LF	Toshiba Semiconductor and Storage	IC BUS SWITCH LOCAP USV Switch Circuit: SPST - NC Multiplexer/Demultiplexer Circuit: 1:1 Number of Circuits: 1 On-State Resistance (Max): 18 Ohm Channel-to-Channel Matching (ΔRon): - Voltage - Supply, Single (V+): 1.65 V ~ 3.6 V Voltage - Supply, Dual (V±): - Switch Time (Ton, Toff) (Max): 6ns, 6ns -3db Bandwidth: - Charge Injection: - Channel Capacitance (CS(off), CD(off)): 3.5pF Current - Leakage (IS(off)) (Max): 1µA Crosstalk: - Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Supplier Device Package: USV	パッケージ: 5-TSSOP, SC-70-5, SOT-353	在庫816,000
TMP91FY22FG	Toshiba Semiconductor and Storage	IC MCU 16BIT 256KB FLASH 100QFP Core Processor: 900/L1 Core Size: 16-Bit Speed: 27MHz Connectivity: EBI/EMI, IrDA, UART/USART Peripherals: DMA Number of I/O: 81 Program Memory Size: 256KB (256K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 16K x 8 Voltage - Supply (Vcc/Vdd): - Data Converters: A/D 8x10b Oscillator Type: Internal Operating Temperature: -20°C ~ 70°C (TA) Mounting Type: - Package / Case: 100-BQFP Supplier Device Package: 100-QFP (14x20)	パッケージ: 100-BQFP	在庫2,064
TMP19A43FDXBG	Toshiba Semiconductor and Storage	IC MCU 32BIT 512KB FLASH 193FBGA Core Processor: TX19A Core Size: 32-Bit Speed: 40MHz Connectivity: EBI/EMI, I2C, UART/USART Peripherals: DMA, WDT Number of I/O: 143 Program Memory Size: 512KB (512K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 24K x 8 Voltage - Supply (Vcc/Vdd): 1.35 V ~ 3.6 V Data Converters: A/D 16x10b; D/A 2x8b Oscillator Type: External Operating Temperature: -20°C ~ 85°C (TA) Mounting Type: - Package / Case: 193-FBGA Supplier Device Package: -	パッケージ: 193-FBGA	在庫19,680
TLP175A(TPL,E	Toshiba Semiconductor and Storage	PHOTO RELAY LOW TRIG CURR SO6 Circuit: SPST-NO (1 Form A) Output Type: AC, DC On-State Resistance (Max): 50 Ohm Load Current: 100mA Voltage - Input: 1.27VDC Voltage - Load: 0 ~ 60 V Mounting Type: Surface Mount Termination Style: Gull Wing Package / Case: 6-SMD (4 Leads), Gull Wing Supplier Device Package: 6-SO, 4 Lead Relay Type: Relay	パッケージ: 6-SMD (4 Leads), Gull Wing	在庫241,596
TLP209D(F)	Toshiba Semiconductor and Storage	PHOTORELAY MOSFET 50MA 8-SOP Circuit: DPST (2 Form A) Output Type: AC, DC On-State Resistance (Max): 50 Ohm Load Current: 50mA Voltage - Input: 1.15VDC Voltage - Load: 0 ~ 200 V Mounting Type: Surface Mount Termination Style: Gull Wing Package / Case: 8-SOP (0.173", 4.40mm Width) Supplier Device Package: 8-SOP Relay Type: Relay	パッケージ: 8-SOP (0.173", 4.40mm Width)	在庫7,038
TLP3052(S,C,F)	Toshiba Semiconductor and Storage	OPTOISOLATOR 5KV TRIAC 6DIP 5L Output Type: Triac Zero Crossing Circuit: No Number of Channels: 1 Voltage - Isolation: 5000Vrms Voltage - Off State: 600V Static dV/dt (Min): 500V/µs (Typ) Current - LED Trigger (Ift) (Max): 10mA Current - On State (It (RMS)) (Max): 100mA Current - Hold (Ih): 1mA (Typ) Turn On Time: - Voltage - Forward (Vf) (Typ): 1.15V Current - DC Forward (If) (Max): 50mA Operating Temperature: -40°C ~ 100°C Mounting Type: Through Hole Package / Case: 6-DIP (0.300", 7.62mm), 5 Leads Supplier Device Package: 6-DIP (Cut), 5 Lead Approvals: BSI, SEMKO, UR	パッケージ: 6-DIP (0.300", 7.62mm), 5 Leads	在庫15,678
TLP748J(D4,F)	Toshiba Semiconductor and Storage	OPTOISOLATOR 4KV SCR 6DIP Output Type: SCR Zero Crossing Circuit: No Number of Channels: 1 Voltage - Isolation: 4000Vrms Voltage - Off State: 600V Static dV/dt (Min): 5V/µs Current - LED Trigger (Ift) (Max): 10mA Current - On State (It (RMS)) (Max): 150mA Current - Hold (Ih): 1mA Turn On Time: 15µs Voltage - Forward (Vf) (Typ): 1.15V Current - DC Forward (If) (Max): 50mA Operating Temperature: -40°C ~ 100°C Mounting Type: Through Hole Package / Case: 6-DIP (0.300", 7.62mm) Supplier Device Package: 6-DIP Approvals: BSI, SEMKO, UR, VDE	パッケージ: 6-DIP (0.300", 7.62mm)	在庫28,860
TLP293-4(V4GBTRE	Toshiba Semiconductor and Storage	OPTOISOLATOR 3.75KV TRANS SO16 Number of Channels: 4 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 5mA Current Transfer Ratio (Max): 600% @ 5mA Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Input Type: DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 300mV Operating Temperature: -55°C ~ 125°C Mounting Type: Surface Mount Package / Case: 16-SOIC (0.179", 4.55mm Width) Supplier Device Package: 16-SO	パッケージ: 16-SOIC (0.179", 4.55mm Width)	在庫7,974
TLP7820(D4BLF4,E	Toshiba Semiconductor and Storage	ISO AMP ANALOG OUTPUT GAIN SAFE Amplifier Type: Isolation Number of Circuits: 1 Output Type: Differential Slew Rate: - Gain Bandwidth Product: - -3db Bandwidth: 230kHz Current - Input Bias: 5.5nA Voltage - Input Offset: 900µV Current - Supply: 12mA Current - Output / Channel: - Voltage - Supply, Single/Dual (±): 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 105°C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.295", 7.50mm Width) Supplier Device Package: 8-SO	パッケージ: 8-SOIC (0.295", 7.50mm Width)	在庫6,992
RN2908-LXHF-CT	Toshiba Semiconductor and Storage	AUTO AEC-Q TR PNPX2 BRT, Q1BSR=2 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	パッケージ: -	在庫17,988
7UL1T86FS-LF-B	Toshiba Semiconductor and Storage	L-MOS LVP IC VCC: 2.3V-3.6V, SOT Logic Type: XOR (Exclusive OR) Number of Circuits: 1 Number of Inputs: 2 Features: - Voltage - Supply: 2.3V ~ 3.6V Current - Quiescent (Max): 1 µA Current - Output High, Low: 8mA, 8mA Logic Level - Low: 0.35V ~ 0.5V Logic Level - High: 1.1V ~ 1.2V Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 15pF Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Supplier Device Package: fSV Package / Case: SOT-953	パッケージ: -	Request a Quote
TC62D748CFG-O-EL	Toshiba Semiconductor and Storage	IC LED DRIVER LINEAR Type: Linear Topology: Shift Register Internal Switch(s): No Number of Outputs: 16 Voltage - Supply (Min): 3V Voltage - Supply (Max): 5.5V Voltage - Output: 17V Current - Output / Channel: 90mA Frequency: - Dimming: No Applications: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 24-SOP (0.236", 6.00mm Width) Supplier Device Package: 24-SSOP	パッケージ: -	Request a Quote
RN2418-LF	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 50V 0.1A SMINI Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 47 kOhms Resistor - Emitter Base (R2) (Ohms): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200 MHz Power - Max: 200 mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	パッケージ: -	在庫9,000
RN4904FE-LF-CT	Toshiba Semiconductor and Storage	TRANS NPN/PNP PREBIAS 0.1W ES6 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz, 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	パッケージ: -	在庫12,000
2SA2097-TE16L1-NQ	Toshiba Semiconductor and Storage	TRANS PNP 50V 5A PW-MOLD Transistor Type: PNP Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 270mV @ 53mA, 1.6A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Power - Max: 1 W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: PW-MOLD	パッケージ: -	Request a Quote
TK28E65W-S1X	Toshiba Semiconductor and Storage	PB-F POWER MOSFET TRANSISTOR TO- FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 27.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1.6mA Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 13.8A, 10V Operating Temperature: 150°C Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	パッケージ: -	在庫150
TC74LCX541FT	Toshiba Semiconductor and Storage	IC BUF NON-INVERT 3.6V 20TSSOP Logic Type: Buffer, Non-Inverting Number of Elements: 1 Number of Bits per Element: 8 Input Type: - Output Type: 3-State Current - Output High, Low: 24mA, 24mA Voltage - Supply: 1.65V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 20-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 20-TSSOP	パッケージ: -	Request a Quote
CMS02-TE12L	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 3A MFLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 400 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 30 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: M-FLAT (2.4x3.8) Operating Temperature - Junction: -40°C ~ 125°C	パッケージ: -	Request a Quote
7UL2T86FK-LF-B	Toshiba Semiconductor and Storage	L-MOS LVP IC SOT-765(US8) VCC:2. Logic Type: XOR (Exclusive OR) Number of Circuits: 2 Number of Inputs: 2 Features: - Voltage - Supply: 2.3V ~ 3.6V Current - Quiescent (Max): 1 µA Current - Output High, Low: 8mA, 8mA Logic Level - Low: 0.35V ~ 0.5V Logic Level - High: 1.1V ~ 1.2V Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 15pF Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Supplier Device Package: US8 Package / Case: 8-VFSOP (0.091", 2.30mm Width)	パッケージ: -	在庫18,000

TK5A50D(STA4,Q,M)

Toshiba Semiconductor and Storage

MOSFET N-CH 500V 5A TO220SIS

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.5A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220SIS
Package / Case: TO-220-3 Full Pack

パッケージ: TO-220-3 Full Pack

在庫120,000

TK11A65W,S5X

Toshiba Semiconductor and Storage

MOSFET N-CH 650V 11.1A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 450µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 300V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 390 mOhm @ 5.5A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220SIS
Package / Case: TO-220-3 Full Pack, Isolated Tab

パッケージ: TO-220-3 Full Pack, Isolated Tab

在庫6,992

TK15J60U(F)

Toshiba Semiconductor and Storage

MOSFET N-CH 600V 15A TO-3PN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 10V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 300 mOhm @ 7.5A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-3P(N)
Package / Case: TO-3P-3, SC-65-3

パッケージ: TO-3P-3, SC-65-3

在庫23,100

TPN2R304PL,L1Q

Toshiba Semiconductor and Storage

MOSFET N-CH 40V 80A TSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.4V @ 0.3mA
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 20V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 630mW (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 40A, 10V
Operating Temperature: 175°C
Mounting Type: Surface Mount
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Package / Case: 8-PowerVDFN

パッケージ: 8-PowerVDFN

在庫4,176

2SB1495,Q(M

Toshiba Semiconductor and Storage

TRANS PNP 3A 100V TO220-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.5mA, 1.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V
Power - Max: 2W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220NIS

パッケージ: TO-220-3 Full Pack

在庫3,680

2SA965-O(TE6,F,M)

Toshiba Semiconductor and Storage

TRANS PNP 800MA 120V TO226-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
Power - Max: 900mW
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: LSTM

パッケージ: TO-226-3, TO-92-3 Long Body

在庫5,888

RN1909FE(TE85L,F)

Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.1W ES6

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 22k
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

パッケージ: SOT-563, SOT-666

在庫3,392

TCV7113F(TE12L,Q)

Toshiba Semiconductor and Storage

IC REG BUCK ADJ 6A SYNC 8SOP-ADV

Function: Step-Down
Output Configuration: Positive
Topology: Buck
Output Type: Adjustable
Number of Outputs: 1
Voltage - Input (Min): 2.7V
Voltage - Input (Max): 5.6V
Voltage - Output (Min/Fixed): 0.8V
Voltage - Output (Max): 5.6V
Current - Output: 6A
Frequency - Switching: 1MHz
Synchronous Rectifier: Yes
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-SOP Advance (5x5)

パッケージ: 8-PowerVDFN

在庫5,568

TB67S215FTAG,EL

Toshiba Semiconductor and Storage

IC STEP MOTOR DRVR PWM 36WQFN

Motor Type - Stepper: Bipolar
Motor Type - AC, DC: -
Function: Driver - Fully Integrated, Control and Power Stage
Output Configuration: Half Bridge (4)
Interface: PWM
Technology: Power MOSFET
Step Resolution: 1, 1/2, 1/4
Applications: General Purpose
Current - Output: 2A
Voltage - Supply: 4.75 V ~ 5.25 V
Voltage - Load: 10 V ~ 35 V
Operating Temperature: -20°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 36-WFQFN Exposed Pad
Supplier Device Package: 36-WQFN (6x6)

パッケージ: 36-WFQFN Exposed Pad

在庫35,562

TC7SBL66CFU,LF

Toshiba Semiconductor and Storage

IC BUS SWITCH LOCAP USV

Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Number of Circuits: 1
On-State Resistance (Max): 18 Ohm
Channel-to-Channel Matching (ΔRon): -
Voltage - Supply, Single (V+): 1.65 V ~ 3.6 V
Voltage - Supply, Dual (V±): -
Switch Time (Ton, Toff) (Max): 6ns, 6ns
-3db Bandwidth: -
Charge Injection: -
Channel Capacitance (CS(off), CD(off)): 3.5pF
Current - Leakage (IS(off)) (Max): 1µA
Crosstalk: -
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Supplier Device Package: USV

パッケージ: 5-TSSOP, SC-70-5, SOT-353

在庫816,000

TMP91FY22FG

Toshiba Semiconductor and Storage

IC MCU 16BIT 256KB FLASH 100QFP

Core Processor: 900/L1
Core Size: 16-Bit
Speed: 27MHz
Connectivity: EBI/EMI, IrDA, UART/USART
Peripherals: DMA
Number of I/O: 81
Program Memory Size: 256KB (256K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 16K x 8
Voltage - Supply (Vcc/Vdd): -
Data Converters: A/D 8x10b
Oscillator Type: Internal
Operating Temperature: -20°C ~ 70°C (TA)
Mounting Type: -
Package / Case: 100-BQFP
Supplier Device Package: 100-QFP (14x20)

パッケージ: 100-BQFP

在庫2,064

TMP19A43FDXBG

Toshiba Semiconductor and Storage

IC MCU 32BIT 512KB FLASH 193FBGA

Core Processor: TX19A
Core Size: 32-Bit
Speed: 40MHz
Connectivity: EBI/EMI, I2C, UART/USART
Peripherals: DMA, WDT
Number of I/O: 143
Program Memory Size: 512KB (512K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 24K x 8
Voltage - Supply (Vcc/Vdd): 1.35 V ~ 3.6 V
Data Converters: A/D 16x10b; D/A 2x8b
Oscillator Type: External
Operating Temperature: -20°C ~ 85°C (TA)
Mounting Type: -
Package / Case: 193-FBGA
Supplier Device Package: -

パッケージ: 193-FBGA

在庫19,680

TLP175A(TPL,E

Toshiba Semiconductor and Storage

PHOTO RELAY LOW TRIG CURR SO6

Circuit: SPST-NO (1 Form A)
Output Type: AC, DC
On-State Resistance (Max): 50 Ohm
Load Current: 100mA
Voltage - Input: 1.27VDC
Voltage - Load: 0 ~ 60 V
Mounting Type: Surface Mount
Termination Style: Gull Wing
Package / Case: 6-SMD (4 Leads), Gull Wing
Supplier Device Package: 6-SO, 4 Lead
Relay Type: Relay

パッケージ: 6-SMD (4 Leads), Gull Wing

在庫241,596

TLP209D(F)

Toshiba Semiconductor and Storage

PHOTORELAY MOSFET 50MA 8-SOP

Circuit: DPST (2 Form A)
Output Type: AC, DC
On-State Resistance (Max): 50 Ohm
Load Current: 50mA
Voltage - Input: 1.15VDC
Voltage - Load: 0 ~ 200 V
Mounting Type: Surface Mount
Termination Style: Gull Wing
Package / Case: 8-SOP (0.173", 4.40mm Width)
Supplier Device Package: 8-SOP
Relay Type: Relay

パッケージ: 8-SOP (0.173", 4.40mm Width)

在庫7,038

TLP3052(S,C,F)

Toshiba Semiconductor and Storage

OPTOISOLATOR 5KV TRIAC 6DIP 5L

Output Type: Triac
Zero Crossing Circuit: No
Number of Channels: 1
Voltage - Isolation: 5000Vrms
Voltage - Off State: 600V
Static dV/dt (Min): 500V/µs (Typ)
Current - LED Trigger (Ift) (Max): 10mA
Current - On State (It (RMS)) (Max): 100mA
Current - Hold (Ih): 1mA (Typ)
Turn On Time: -
Voltage - Forward (Vf) (Typ): 1.15V
Current - DC Forward (If) (Max): 50mA
Operating Temperature: -40°C ~ 100°C
Mounting Type: Through Hole
Package / Case: 6-DIP (0.300", 7.62mm), 5 Leads
Supplier Device Package: 6-DIP (Cut), 5 Lead
Approvals: BSI, SEMKO, UR

パッケージ: 6-DIP (0.300", 7.62mm), 5 Leads

在庫15,678

TLP748J(D4,F)

Toshiba Semiconductor and Storage

OPTOISOLATOR 4KV SCR 6DIP

Output Type: SCR
Zero Crossing Circuit: No
Number of Channels: 1
Voltage - Isolation: 4000Vrms
Voltage - Off State: 600V
Static dV/dt (Min): 5V/µs
Current - LED Trigger (Ift) (Max): 10mA
Current - On State (It (RMS)) (Max): 150mA
Current - Hold (Ih): 1mA
Turn On Time: 15µs
Voltage - Forward (Vf) (Typ): 1.15V
Current - DC Forward (If) (Max): 50mA
Operating Temperature: -40°C ~ 100°C
Mounting Type: Through Hole
Package / Case: 6-DIP (0.300", 7.62mm)
Supplier Device Package: 6-DIP
Approvals: BSI, SEMKO, UR, VDE

パッケージ: 6-DIP (0.300", 7.62mm)

在庫28,860

TLP293-4(V4GBTRE

Toshiba Semiconductor and Storage

OPTOISOLATOR 3.75KV TRANS SO16

Number of Channels: 4
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Current Transfer Ratio (Max): 600% @ 5mA
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Input Type: DC
Output Type: Transistor
Voltage - Output (Max): 80V
Current - Output / Channel: 50mA
Voltage - Forward (Vf) (Typ): 1.25V
Current - DC Forward (If) (Max): 50mA
Vce Saturation (Max): 300mV
Operating Temperature: -55°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Supplier Device Package: 16-SO

パッケージ: 16-SOIC (0.179", 4.55mm Width)

在庫7,974

TLP7820(D4BLF4,E

Toshiba Semiconductor and Storage

ISO AMP ANALOG OUTPUT GAIN SAFE

Amplifier Type: Isolation
Number of Circuits: 1
Output Type: Differential
Slew Rate: -
Gain Bandwidth Product: -
-3db Bandwidth: 230kHz
Current - Input Bias: 5.5nA
Voltage - Input Offset: 900µV
Current - Supply: 12mA
Current - Output / Channel: -
Voltage - Supply, Single/Dual (±): 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 8-SO

パッケージ: 8-SOIC (0.295", 7.50mm Width)

在庫6,992

RN2908-LXHF-CT

Toshiba Semiconductor and Storage

AUTO AEC-Q TR PNPX2 BRT, Q1BSR=2

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

パッケージ: -

在庫17,988

7UL1T86FS-LF-B

Toshiba Semiconductor and Storage

L-MOS LVP IC VCC: 2.3V-3.6V, SOT

Logic Type: XOR (Exclusive OR)
Number of Circuits: 1
Number of Inputs: 2
Features: -
Voltage - Supply: 2.3V ~ 3.6V
Current - Quiescent (Max): 1 µA
Current - Output High, Low: 8mA, 8mA
Logic Level - Low: 0.35V ~ 0.5V
Logic Level - High: 1.1V ~ 1.2V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 15pF
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Supplier Device Package: fSV
Package / Case: SOT-953

パッケージ: -

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TC62D748CFG-O-EL

Toshiba Semiconductor and Storage

IC LED DRIVER LINEAR

Type: Linear
Topology: Shift Register
Internal Switch(s): No
Number of Outputs: 16
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Voltage - Output: 17V
Current - Output / Channel: 90mA
Frequency: -
Dimming: No
Applications: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-SOP (0.236", 6.00mm Width)
Supplier Device Package: 24-SSOP

パッケージ: -

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RN2418-LF

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A SMINI

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 47 kOhms
Resistor - Emitter Base (R2) (Ohms): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: S-Mini

パッケージ: -

在庫9,000

RN4904FE-LF-CT

Toshiba Semiconductor and Storage

TRANS NPN/PNP PREBIAS 0.1W ES6

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz, 200MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

パッケージ: -

在庫12,000

2SA2097-TE16L1-NQ

Toshiba Semiconductor and Storage

TRANS PNP 50V 5A PW-MOLD

Transistor Type: PNP
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: 270mV @ 53mA, 1.6A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Power - Max: 1 W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: PW-MOLD

パッケージ: -

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TK28E65W-S1X

Toshiba Semiconductor and Storage

PB-F POWER MOSFET TRANSISTOR TO-

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 27.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 1.6mA
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 13.8A, 10V
Operating Temperature: 150°C
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3

パッケージ: -

在庫150

TC74LCX541FT

Toshiba Semiconductor and Storage

IC BUF NON-INVERT 3.6V 20TSSOP

Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Number of Bits per Element: 8
Input Type: -
Output Type: 3-State
Current - Output High, Low: 24mA, 24mA
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 20-TSSOP

パッケージ: -

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CMS02-TE12L

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 3A MFLAT

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 400 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 125°C

パッケージ: -

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7UL2T86FK-LF-B

Toshiba Semiconductor and Storage

L-MOS LVP IC SOT-765(US8) VCC:2.

Logic Type: XOR (Exclusive OR)
Number of Circuits: 2
Number of Inputs: 2
Features: -
Voltage - Supply: 2.3V ~ 3.6V
Current - Quiescent (Max): 1 µA
Current - Output High, Low: 8mA, 8mA
Logic Level - Low: 0.35V ~ 0.5V
Logic Level - High: 1.1V ~ 1.2V
Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 15pF
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Supplier Device Package: US8
Package / Case: 8-VFSOP (0.091", 2.30mm Width)

パッケージ: -

在庫18,000