The InnoSwitch3-EP IC's 750V PowiGaN switch achieves lower on-off and on-off losses, eliminates the need for metal fins and reduces the associated vibration effects. Powigan-based devices are also extremely reliable and durable, protecting the system from voltage spikes even during longer-lasting input surges and quickly recovering after the surge is over.
Nexperia has announced the availability of its first E-mode (enhanced) power GaN FeTs for low voltage (100/150 V) and high voltage (650 V) applications. Nexperia has added seven new E-mode devices to its cascading GaN nitride product portfolio, providing designers with the best options from gan FeTs to other silicon-based power devices.
Onsemi has launched the latest generation of 1200V EliteSiC Silicon Carbide (SiC) M3S devices to help power electronics engineers achieve greater energy efficiency and lower system costs. The new product line includes EliteSiC MosFeTs and modules that help increase switching speeds for a growing number of 800-V electric vehicle (EV) on-board chargers (OBCs) and energy infrastructure applications such as EV DC fast charging, solar solutions, and energy storage.
Microchip Technology announced the launch of Silicon Carbide (SiC) electronic Fuse (E-Fuse) demo boards. The device is available in six models for 400-800V battery systems with current ratings up to 30 amps. SiC power solutions offer the industry's broadest and most flexible portfolio of MosFETs, diodes and grid drivers, including bare chip, discrete devices, modules and customizable power modules.
Infineon Technologies AG, a global leader in automotive semiconductors, and FoxconnTechnology Group, the world's largest technology manufacturer and service provider, announced that they have signed a memorandum of understanding to establish a long-term partnership in the field of electric vehicles. The two sides will work together to develop electric vehicles with high energy efficiency and advanced intelligent features.
ScioSense, the industry leader in environmental and high-precision flow and time measurement sensor chips, announced the introduction of ENS161, a low-power, multi-gas sensor that enables continuous air quality monitoring in wearable and portable devices powered only by small capacity batteries.
Power Integrations offers new single-channel plug and play gate drivers for IHM and IHV IGBT modules up to 190mmx140mm. The 1SP0635V2A0D combines Power Integrations proven and reliable SCALE-2™ switching performance and protection with a configurable isolated serial output interface to enhance driver setup flexibility and provide comprehensive telemeting reporting for accurate lifetime estimates
Infineon Technologies extends the technology process of the SECORA™ Pay solution portfolio to 28nm. Innovative product design enables Infineon to further break the limits of payment card technology. In doing so, the product also provides the latest technology in a reliable sourcing option for payment ecosystems in major regional markets. The new product family is the first of its kind in the market to apply the leading 28 nm chip technology to embedded nonvolatile memory.
Rohm, the world's leading semiconductor manufacturer, will participate in 2023PCIM Europe, which will be held in Nuremberg, Germany, from May 9 to 11. PCIM Europe is the world's top exhibition and seminar for the power electronics industry. At that time, ROM will showcase its new power semiconductors that advance sustainable technologies, including high-performance solutions for the electric vehicle sector and beyond
Transphorm has announced the release of its 1200 volt FET simulation model and preliminary data sheet. TP120H070WS Field effect transistor is the only 1200 volt GaN-on-Sapphire power semiconductor launched to date, which is the first of its kind. Its launch demonstrates Transphorm's ability to support future automotive power systems, as well as three-phase power systems already commonly used in the industrial, data communications and renewable energy markets.
Power Integrations introduces SCALE-iFlex™ LT NTC Series IGBT/SiC module gate drivers. The new gate drivers are compatible with popular 100mmx140mm IGBT half-bridge modules such as Mitsubishi LV100 and Infineon XHP 2, as well as silicon carbide (SiC) derived modules with voltages up to 2300V.
With the advent of the 5G era, the network is evolving in the direction of openness. Mobile network operators (Mnos) and communications service providers (CSPS) are looking for solutions that will reduce costs and speed up deployment to meet demanding network coverage and capacity targets in the coming years. This makes it a challenge for cellular providers to balance cost and performance in providing 4G, 5G, dual-mode, acer stations, and small indoor and outdoor base stations
While auto theft remains a legitimate concern, the security threat associated with internal electronic control units (ECUs) and their communications inside and outside the vehicle is significantly greater. About 50 percent of all new cars sold this year will be connected, and many estimate that number will be around 95 percent by 2030.
Following the EiceDRIVER™ 6ED223xS12T series of Silicon on Insulator (SOI) three-phase gate drivers, Infineon now further expands its product portfolio with the EiceDRIVER 2ED132xS12x series. The half-bridge configuration of the drive IC family complements the existing 1200V SOI family, providing customers with more choice as well as design flexibility.
As an authorized distributor of TE Connectivity, Heilind provides market services and support for related products. In addition, Heilind supplies products from many of the world's top manufacturers across 25 different component categories, focusing on all market segments and all customers, and continuously seeking a wide range of product offerings to cover all markets.
Infineon Technologies introduces a new automotive power module, HybridPACK™ Drive G2. The module inherits the mature HybridPACK Drive G1 integrated B6 package concept, offering scalability at the same size and scaling to higher power and ease of use. The HybridPACK Drive G2 family comes in different current and voltage ratings (750 V and 1200 V) and uses Infineon's next generation chip technologies, EDT3 (Silicon IGBT) and CoolSiC™ G2 MOSFET.
Infineon's NGC1081 will further expand its portfolio of NFC tag side controllers. This new single-chip IC solution enables Internet of Things industry customers to develop lower cost and smaller smart edge computing/sensing devices, ultimately maximizing benefits for end users and manufacturers.
Memsic, the world's leading supplier of inertial MEMS sensors, has released a new AMR geomagnetic sensor MMC5616WA, which is a new upgrade of the ultra-small AMR geomagnetic sensor MMC56x3 series produced by Meisin in large scale to meet the rich application scenarios including smart phones, wearable devices, drones, AR/VR, etc.
