ページ 49 - トランジスタ - バイポーラ（BJT） - RF | ディスクリート半導体製品

部品番号	メーカ	説明	パッケージ	在庫	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BFP 405F E6327	Infineon Technologies	TRANSISTOR RF NPN 4.5V TSFP-4 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 25GHz Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz Gain: 22.5dB Power - Max: 55mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V Current - Collector (Ic) (Max): 12mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Supplier Device Package: 4-TSFP	パッケージ: 4-SMD, Flat Leads	在庫6,048	5V	25GHz	1.25dB @ 1.8GHz	22.5dB	55mW	60 @ 5mA, 4V	12mA	150°C (TJ)	Surface Mount	4-SMD, Flat Leads	4-TSFP
NE85639-T1-R28-A	CEL	SAME AS 2SC4093 NPN SILICON AMPL Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Gain: 13dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: SOT-143	パッケージ: TO-253-4, TO-253AA	在庫3,072	12V	9GHz	1.1dB @ 1GHz	13dB	200mW	50 @ 20mA, 10V	100mA	150°C (TJ)	Surface Mount	TO-253-4, TO-253AA	SOT-143
2SC4228-T1-A	CEL	RF TRANSISTOR NPN SOT-323 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1.9dB @ 2GHz Gain: 7.5dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 3V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	パッケージ: SC-70, SOT-323	在庫327,360	10V	8GHz	1.9dB @ 2GHz	7.5dB	150mW	50 @ 5mA, 3V	35mA	150°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323
BFY90	Microsemi Corporation	TRANS RF NPN 200MW 50MA TO72 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 1.3GHz Noise Figure (dB Typ @ f): 2.5dB ~ 5dB @ 500MHz Gain: 20dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 25mA, 1V Current - Collector (Ic) (Max): 50mA Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-206AF, TO-72-4 Metal Can Supplier Device Package: TO-72	パッケージ: TO-206AF, TO-72-4 Metal Can	在庫2,912	15V	1.3GHz	2.5dB ~ 5dB @ 500MHz	20dB	200mW	20 @ 25mA, 1V	50mA	-	Through Hole	TO-206AF, TO-72-4 Metal Can	TO-72
PN918_D74Z	Fairchild/ON Semiconductor	TRANS RF NPN 15V 50MA TO-92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 600MHz Noise Figure (dB Typ @ f): 6dB @ 60MHz Gain: 15dB Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V Current - Collector (Ic) (Max): 50mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	パッケージ: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	在庫7,664	15V	600MHz	6dB @ 60MHz	15dB	350mW	20 @ 3mA, 1V	50mA	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
MPSH11_D27Z	Fairchild/ON Semiconductor	TRANS RF NPN 25V 50MA TO-92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 25V Frequency - Transition: 650MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	パッケージ: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	在庫6,928	25V	650MHz	-	-	350mW	60 @ 4mA, 10V	50mA	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
NE97733-A	CEL	RF TRANSISTOR PNP SOT-23 Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8.5GHz Noise Figure (dB Typ @ f): 1.5dB @ 1GHz Gain: 12dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 8V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	パッケージ: TO-236-3, SC-59, SOT-23-3	在庫4,928	12V	8.5GHz	1.5dB @ 1GHz	12dB	200mW	20 @ 20mA, 8V	50mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
AT-32011-TR1	Broadcom Limited	IC TRANS NPN BIPOLAR SOT-143 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5.5V Frequency - Transition: - Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 900MHz Gain: 12.5dB ~ 14dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 2.7V Current - Collector (Ic) (Max): 32mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: SOT-143	パッケージ: TO-253-4, TO-253AA	在庫101,472	5.5V	-	1dB ~ 1.3dB @ 900MHz	12.5dB ~ 14dB	200mW	70 @ 2mA, 2.7V	32mA	150°C (TJ)	Surface Mount	TO-253-4, TO-253AA	SOT-143
BFG21W,115	NXP	TRANS NPN 15V .5A 18GHZ CMPAK-4 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.5V Frequency - Transition: 18GHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 600mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 2V Current - Collector (Ic) (Max): 500mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: CMPAK-4	パッケージ: SC-82A, SOT-343	在庫3,456	4.5V	18GHz	-	-	600mW	40 @ 200mA, 2V	500mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	CMPAK-4
BFG94,115	NXP	TRANS NPN 10V 60MA SOT223 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 6GHz Noise Figure (dB Typ @ f): 2.7dB ~ 3dB @ 500MHz ~ 1GHz Gain: - Power - Max: 700mW DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 30mA, 5V Current - Collector (Ic) (Max): 60mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	パッケージ: TO-261-4, TO-261AA	在庫6,320	12V	6GHz	2.7dB ~ 3dB @ 500MHz ~ 1GHz	-	700mW	45 @ 30mA, 5V	60mA	175°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223
BFR340L3E6327XTMA1	Infineon Technologies	TRANSISTOR RF NPN 6V TSLP-3 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 9V Frequency - Transition: 14GHz Noise Figure (dB Typ @ f): 1.15dB @ 1.8GHz Gain: 17.5dB Power - Max: 60mW DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 5mA, 3V Current - Collector (Ic) (Max): 10mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: PG-TSLP-3	パッケージ: SC-101, SOT-883	在庫4,592	9V	14GHz	1.15dB @ 1.8GHz	17.5dB	60mW	90 @ 5mA, 3V	10mA	150°C (TJ)	Surface Mount	SC-101, SOT-883	PG-TSLP-3
0204-125	Microsemi Corporation	TRANS RF BIPO 125W 500MHZ 55JT2 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 60V Frequency - Transition: 225MHz ~ 400MHz Noise Figure (dB Typ @ f): - Gain: 7dB ~ 8.5dB Power - Max: 270W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V Current - Collector (Ic) (Max): 16A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55JT Supplier Device Package: 55JT	パッケージ: 55JT	在庫4,816	60V	225MHz ~ 400MHz	-	7dB ~ 8.5dB	270W	20 @ 1A, 5V	16A	200°C (TJ)	Chassis Mount	55JT	55JT
10A030	Microsemi Corporation	TRANS RF BIPO 13W 1.5A 55FT2 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 24V Frequency - Transition: 2.5GHz Noise Figure (dB Typ @ f): - Gain: 7.8dB ~ 8.5dB Power - Max: 13W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 200mA, 5V Current - Collector (Ic) (Max): 1.5A Operating Temperature: 200°C (TJ) Mounting Type: Stud Mount Package / Case: 55FT Supplier Device Package: 55FT	パッケージ: 55FT	在庫7,936	24V	2.5GHz	-	7.8dB ~ 8.5dB	13W	20 @ 200mA, 5V	1.5A	200°C (TJ)	Stud Mount	55FT	55FT
MS1402	Microsemi Corporation	TRANS RF BIPO 5W 750MA M122 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 16V Frequency - Transition: 450MHz ~ 512MHz Noise Figure (dB Typ @ f): - Gain: 10dB Power - Max: 5W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V Current - Collector (Ic) (Max): 750mA Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M122 Supplier Device Package: M122	パッケージ: M122	在庫2,896	16V	450MHz ~ 512MHz	-	10dB	5W	20 @ 100mA, 5V	750mA	200°C (TJ)	Chassis Mount	M122	M122
JAN2N4957UB	Microsemi Corporation	TRANS PNP 30V 30MA Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: - Noise Figure (dB Typ @ f): 3.5dB @ 450MHz Gain: 25dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V Current - Collector (Ic) (Max): 30mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	パッケージ: 3-SMD, No Lead	在庫6,032	30V	-	3.5dB @ 450MHz	25dB	200mW	30 @ 5mA, 10V	30mA	-65°C ~ 200°C (TJ)	Surface Mount	3-SMD, No Lead	UB
2SC5551AE-TD-E	ON Semiconductor	TRANS NPN BIPO HI FREQ PCP Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: 3.5GHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 1.3W DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 50mA, 5V Current - Collector (Ic) (Max): 300mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PCP	パッケージ: TO-243AA	在庫3,008	30V	3.5GHz	-	-	1.3W	90 @ 50mA, 5V	300mA	150°C (TJ)	Surface Mount	TO-243AA	PCP
AT-31011-BLKG	Broadcom Limited	TRANS NPN BIPO 5.5V 16MA SOT-143 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5.5V Frequency - Transition: - Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz Gain: 11dB ~ 13dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 2.7V Current - Collector (Ic) (Max): 16mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: SOT-143	パッケージ: TO-253-4, TO-253AA	在庫3,664	5.5V	-	0.9dB ~ 1.2dB @ 900MHz	11dB ~ 13dB	150mW	70 @ 1mA, 2.7V	16mA	150°C (TJ)	Surface Mount	TO-253-4, TO-253AA	SOT-143
2SC4853A-4-TL-E	ON Semiconductor	TRANS NPN BIPO 15MA 6V MCP Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 6V Frequency - Transition: 5GHz Noise Figure (dB Typ @ f): 2.6dB ~ 1.9dB @ 1GHz Gain: 7dB ~ 10.5dB @ 1GHz Power - Max: 90mW DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 1mA, 1V Current - Collector (Ic) (Max): 15mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: 3-MCP	パッケージ: SC-70, SOT-323	在庫360,000	6V	5GHz	2.6dB ~ 1.9dB @ 1GHz	7dB ~ 10.5dB @ 1GHz	90mW	90 @ 1mA, 1V	15mA	150°C (TJ)	Surface Mount	SC-70, SOT-323	3-MCP
DSC9G0200L	Panasonic Electronic Components	TRANS RF NPN 20V 15MA SSMINI3 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 650MHz Noise Figure (dB Typ @ f): 3.3dB @ 100MHz Gain: 24dB Power - Max: 125mW DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 1mA, 6V Current - Collector (Ic) (Max): 15mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-89, SOT-490 Supplier Device Package: SSMini3-F3-B	パッケージ: SC-89, SOT-490	在庫2,512	20V	650MHz	3.3dB @ 100MHz	24dB	125mW	65 @ 1mA, 6V	15mA	150°C (TJ)	Surface Mount	SC-89, SOT-490	SSMini3-F3-B
15GN01CA-TB-E	ON Semiconductor	TRANS NPN VHF-UHF HI FREQ CP Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 8V Frequency - Transition: 1.5GHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 5V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: 3-CP	パッケージ: TO-236-3, SC-59, SOT-23-3	在庫36,000	8V	1.5GHz	-	-	200mW	200 @ 10mA, 5V	50mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	3-CP
MRF393	M/A-Com Technology Solutions	TRANS RF NPN 30V 16A 744A-01 Transistor Type: 2 NPN (Dual) Common Emitter Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 8.5dB Power - Max: 100W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V Current - Collector (Ic) (Max): 16A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 744A-01 Supplier Device Package: 744A-01, Style 1	パッケージ: 744A-01	在庫7,040	30V	-	-	8.5dB	100W	20 @ 1A, 5V	16A	200°C (TJ)	Chassis Mount	744A-01	744A-01, Style 1
BFR 193 E6327	Infineon Technologies	TRANSISTOR NPN RF 12V SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz Gain: 10dB ~ 15dB Power - Max: 580mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V Current - Collector (Ic) (Max): 80mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	パッケージ: TO-236-3, SC-59, SOT-23-3	在庫95,058	12V	8GHz	1dB ~ 1.6dB @ 900MHz ~ 1.8GHz	10dB ~ 15dB	580mW	70 @ 30mA, 8V	80mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3
BFR750L3RHE6327	Infineon Technologies	RF BIPOLAR TRANSISTOR Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.7V Frequency - Transition: 37GHz Noise Figure (dB Typ @ f): 0.6dB ~ 1.1dB @ 1.8GHz ~ 6GHz Gain: 21dB Power - Max: 360mW DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 60mA, 3V Current - Collector (Ic) (Max): 90mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: PG-TSLP-3	パッケージ: -	Request a Quote	4.7V	37GHz	0.6dB ~ 1.1dB @ 1.8GHz ~ 6GHz	21dB	360mW	160 @ 60mA, 3V	90mA	150°C (TJ)	Surface Mount	SC-101, SOT-883	PG-TSLP-3
2SC4571-T1-A	Renesas Electronics Corporation	SMALL SIGNAL BIPOLAR TRANSTR NPN Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 5GHz Noise Figure (dB Typ @ f): - Gain: 5dB Power - Max: 120mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5mA, 5V Current - Collector (Ic) (Max): 60mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70	パッケージ: -	Request a Quote	12V	5GHz	-	5dB	120mW	40 @ 5mA, 5V	60mA	125°C (TJ)	Surface Mount	SC-70, SOT-323	SC-70
MS2840	Microsemi Corporation	TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
NSVF5488SKT3G	onsemi	BIP NPN 70MA 10V FT=7G Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1dB @ 1GHz Gain: 12dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 5V Current - Collector (Ic) (Max): 70mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-623F Supplier Device Package: SOT-623/SSFP	パッケージ: -	在庫23,004	10V	7GHz	1dB @ 1GHz	12dB	100mW	90 @ 20mA, 5V	70mA	-55°C ~ 150°C (TJ)	Surface Mount	SOT-623F	SOT-623/SSFP
NSVF4017SG4T1G	onsemi	RF TRANS NPN 12V 10GHZ SC82FL/ Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 1.2dB @ 1GHz Gain: 17dB Power - Max: 450mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V Current - Collector (Ic) (Max): 100mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Supplier Device Package: SC-82FL/MCPH4	パッケージ: -	Request a Quote	12V	10GHz	1.2dB @ 1GHz	17dB	450mW	60 @ 50mA, 5V	100mA	-55°C ~ 150°C (TJ)	Surface Mount	4-SMD, Flat Leads	SC-82FL/MCPH4
2SA1702S-AN	onsemi	2SA1702S - SMALL SIGNAL BIPOLAR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-

BFP 405F E6327

Infineon Technologies

TRANSISTOR RF NPN 4.5V TSFP-4

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz
Gain: 22.5dB
Power - Max: 55mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V
Current - Collector (Ic) (Max): 12mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Supplier Device Package: 4-TSFP

パッケージ: 4-SMD, Flat Leads

在庫6,048

5V

25GHz

1.25dB @ 1.8GHz

22.5dB

55mW

60 @ 5mA, 4V

12mA

150°C (TJ)

Surface Mount

4-SMD, Flat Leads

4-TSFP

NE85639-T1-R28-A

CEL

SAME AS 2SC4093 NPN SILICON AMPL

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Gain: 13dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143

パッケージ: TO-253-4, TO-253AA

在庫3,072

12V

9GHz

1.1dB @ 1GHz

13dB

200mW

50 @ 20mA, 10V

100mA

150°C (TJ)

Surface Mount

TO-253-4, TO-253AA

SOT-143

2SC4228-T1-A

CEL

RF TRANSISTOR NPN SOT-323

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.9dB @ 2GHz
Gain: 7.5dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 3V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

パッケージ: SC-70, SOT-323

在庫327,360

10V

8GHz

1.9dB @ 2GHz

7.5dB

150mW

50 @ 5mA, 3V

35mA

150°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323

BFY90

Microsemi Corporation

TRANS RF NPN 200MW 50MA TO72

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 1.3GHz
Noise Figure (dB Typ @ f): 2.5dB ~ 5dB @ 500MHz
Gain: 20dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 25mA, 1V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-206AF, TO-72-4 Metal Can
Supplier Device Package: TO-72

パッケージ: TO-206AF, TO-72-4 Metal Can

在庫2,912

15V

1.3GHz

2.5dB ~ 5dB @ 500MHz

20dB

200mW

20 @ 25mA, 1V

50mA

-

Through Hole

TO-206AF, TO-72-4 Metal Can

TO-72

PN918_D74Z

Fairchild/ON Semiconductor

TRANS RF NPN 15V 50MA TO-92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 600MHz
Noise Figure (dB Typ @ f): 6dB @ 60MHz
Gain: 15dB
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

パッケージ: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

在庫7,664

15V

600MHz

6dB @ 60MHz

15dB

350mW

20 @ 3mA, 1V

50mA

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

MPSH11_D27Z

Fairchild/ON Semiconductor

TRANS RF NPN 25V 50MA TO-92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: 650MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

パッケージ: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

在庫6,928

25V

650MHz

-

350mW

60 @ 4mA, 10V

50mA

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

NE97733-A

CEL

RF TRANSISTOR PNP SOT-23

Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8.5GHz
Noise Figure (dB Typ @ f): 1.5dB @ 1GHz
Gain: 12dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 8V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

パッケージ: TO-236-3, SC-59, SOT-23-3

在庫4,928

12V

8.5GHz

1.5dB @ 1GHz

12dB

200mW

20 @ 20mA, 8V

50mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

AT-32011-TR1

Broadcom Limited

IC TRANS NPN BIPOLAR SOT-143

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5.5V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 900MHz
Gain: 12.5dB ~ 14dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 2.7V
Current - Collector (Ic) (Max): 32mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143

パッケージ: TO-253-4, TO-253AA

在庫101,472

5.5V

-

1dB ~ 1.3dB @ 900MHz

12.5dB ~ 14dB

200mW

70 @ 2mA, 2.7V

32mA

150°C (TJ)

Surface Mount

TO-253-4, TO-253AA

SOT-143

BFG21W,115

NXP

TRANS NPN 15V .5A 18GHZ CMPAK-4

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 4.5V
Frequency - Transition: 18GHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 600mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 2V
Current - Collector (Ic) (Max): 500mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: CMPAK-4

パッケージ: SC-82A, SOT-343

在庫3,456

4.5V

18GHz

-

600mW

40 @ 200mA, 2V

500mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

CMPAK-4

BFG94,115

NXP

TRANS NPN 10V 60MA SOT223

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 6GHz
Noise Figure (dB Typ @ f): 2.7dB ~ 3dB @ 500MHz ~ 1GHz
Gain: -
Power - Max: 700mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 30mA, 5V
Current - Collector (Ic) (Max): 60mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

パッケージ: TO-261-4, TO-261AA

在庫6,320

12V

6GHz

2.7dB ~ 3dB @ 500MHz ~ 1GHz

-

700mW

45 @ 30mA, 5V

60mA

175°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223

BFR340L3E6327XTMA1

Infineon Technologies

TRANSISTOR RF NPN 6V TSLP-3

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 9V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1.15dB @ 1.8GHz
Gain: 17.5dB
Power - Max: 60mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 5mA, 3V
Current - Collector (Ic) (Max): 10mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: PG-TSLP-3

パッケージ: SC-101, SOT-883

在庫4,592

9V

14GHz

1.15dB @ 1.8GHz

17.5dB

60mW

90 @ 5mA, 3V

10mA

150°C (TJ)

Surface Mount

SC-101, SOT-883

PG-TSLP-3

0204-125

Microsemi Corporation

TRANS RF BIPO 125W 500MHZ 55JT2

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 60V
Frequency - Transition: 225MHz ~ 400MHz
Noise Figure (dB Typ @ f): -
Gain: 7dB ~ 8.5dB
Power - Max: 270W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
Current - Collector (Ic) (Max): 16A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55JT
Supplier Device Package: 55JT

パッケージ: 55JT

在庫4,816

60V

225MHz ~ 400MHz

-

7dB ~ 8.5dB

270W

20 @ 1A, 5V

16A

200°C (TJ)

Chassis Mount

55JT

10A030

Microsemi Corporation

TRANS RF BIPO 13W 1.5A 55FT2

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 24V
Frequency - Transition: 2.5GHz
Noise Figure (dB Typ @ f): -
Gain: 7.8dB ~ 8.5dB
Power - Max: 13W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 200mA, 5V
Current - Collector (Ic) (Max): 1.5A
Operating Temperature: 200°C (TJ)
Mounting Type: Stud Mount
Package / Case: 55FT
Supplier Device Package: 55FT

パッケージ: 55FT

在庫7,936

24V

2.5GHz

-

7.8dB ~ 8.5dB

13W

20 @ 200mA, 5V

1.5A

200°C (TJ)

Stud Mount

55FT

MS1402

Microsemi Corporation

TRANS RF BIPO 5W 750MA M122

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 16V
Frequency - Transition: 450MHz ~ 512MHz
Noise Figure (dB Typ @ f): -
Gain: 10dB
Power - Max: 5W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
Current - Collector (Ic) (Max): 750mA
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M122
Supplier Device Package: M122

パッケージ: M122

在庫2,896

16V

450MHz ~ 512MHz

-

10dB

5W

20 @ 100mA, 5V

750mA

200°C (TJ)

Chassis Mount

M122

JAN2N4957UB

Microsemi Corporation

TRANS PNP 30V 30MA

Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 30V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 3.5dB @ 450MHz
Gain: 25dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: UB

パッケージ: 3-SMD, No Lead

在庫6,032

30V

-

3.5dB @ 450MHz

25dB

200mW

30 @ 5mA, 10V

30mA

-65°C ~ 200°C (TJ)

Surface Mount

3-SMD, No Lead

UB

2SC5551AE-TD-E

ON Semiconductor

TRANS NPN BIPO HI FREQ PCP

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 30V
Frequency - Transition: 3.5GHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 1.3W
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 50mA, 5V
Current - Collector (Ic) (Max): 300mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: PCP

パッケージ: TO-243AA

在庫3,008

30V

3.5GHz

-

1.3W

90 @ 50mA, 5V

300mA

150°C (TJ)

Surface Mount

TO-243AA

PCP

AT-31011-BLKG

Broadcom Limited

TRANS NPN BIPO 5.5V 16MA SOT-143

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5.5V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz
Gain: 11dB ~ 13dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 2.7V
Current - Collector (Ic) (Max): 16mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143

パッケージ: TO-253-4, TO-253AA

在庫3,664

5.5V

-

0.9dB ~ 1.2dB @ 900MHz

11dB ~ 13dB

150mW

70 @ 1mA, 2.7V

16mA

150°C (TJ)

Surface Mount

TO-253-4, TO-253AA

SOT-143

2SC4853A-4-TL-E

ON Semiconductor

TRANS NPN BIPO 15MA 6V MCP

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 6V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 2.6dB ~ 1.9dB @ 1GHz
Gain: 7dB ~ 10.5dB @ 1GHz
Power - Max: 90mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 1mA, 1V
Current - Collector (Ic) (Max): 15mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: 3-MCP

パッケージ: SC-70, SOT-323

在庫360,000

6V

5GHz

2.6dB ~ 1.9dB @ 1GHz

7dB ~ 10.5dB @ 1GHz

90mW

90 @ 1mA, 1V

15mA

150°C (TJ)

Surface Mount

SC-70, SOT-323

3-MCP

DSC9G0200L

Panasonic Electronic Components

TRANS RF NPN 20V 15MA SSMINI3

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 650MHz
Noise Figure (dB Typ @ f): 3.3dB @ 100MHz
Gain: 24dB
Power - Max: 125mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 1mA, 6V
Current - Collector (Ic) (Max): 15mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Supplier Device Package: SSMini3-F3-B

パッケージ: SC-89, SOT-490

在庫2,512

20V

650MHz

3.3dB @ 100MHz

24dB

125mW

65 @ 1mA, 6V

15mA

150°C (TJ)

Surface Mount

SC-89, SOT-490

SSMini3-F3-B

15GN01CA-TB-E

ON Semiconductor

TRANS NPN VHF-UHF HI FREQ CP

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 8V
Frequency - Transition: 1.5GHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 5V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: 3-CP

パッケージ: TO-236-3, SC-59, SOT-23-3

在庫36,000

8V

1.5GHz

-

200mW

200 @ 10mA, 5V

50mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

3-CP

MRF393

M/A-Com Technology Solutions

TRANS RF NPN 30V 16A 744A-01

Transistor Type: 2 NPN (Dual) Common Emitter
Voltage - Collector Emitter Breakdown (Max): 30V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 8.5dB
Power - Max: 100W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
Current - Collector (Ic) (Max): 16A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 744A-01
Supplier Device Package: 744A-01, Style 1

パッケージ: 744A-01

在庫7,040

30V

-

8.5dB

100W

20 @ 1A, 5V

16A

200°C (TJ)

Chassis Mount

744A-01

744A-01, Style 1

BFR 193 E6327

Infineon Technologies

TRANSISTOR NPN RF 12V SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Gain: 10dB ~ 15dB
Power - Max: 580mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

パッケージ: TO-236-3, SC-59, SOT-23-3

在庫95,058

12V

8GHz

1dB ~ 1.6dB @ 900MHz ~ 1.8GHz

10dB ~ 15dB

580mW

70 @ 30mA, 8V

80mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23-3

BFR750L3RHE6327

Infineon Technologies

RF BIPOLAR TRANSISTOR

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 4.7V
Frequency - Transition: 37GHz
Noise Figure (dB Typ @ f): 0.6dB ~ 1.1dB @ 1.8GHz ~ 6GHz
Gain: 21dB
Power - Max: 360mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 60mA, 3V
Current - Collector (Ic) (Max): 90mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: PG-TSLP-3

パッケージ: -

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4.7V

37GHz

0.6dB ~ 1.1dB @ 1.8GHz ~ 6GHz

21dB

360mW

160 @ 60mA, 3V

90mA

150°C (TJ)

Surface Mount

SC-101, SOT-883

PG-TSLP-3

2SC4571-T1-A

Renesas Electronics Corporation

SMALL SIGNAL BIPOLAR TRANSTR NPN

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): -
Gain: 5dB
Power - Max: 120mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5mA, 5V
Current - Collector (Ic) (Max): 60mA
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70

パッケージ: -

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12V

5GHz

-

5dB

120mW

40 @ 5mA, 5V

60mA

125°C (TJ)

Surface Mount

SC-70, SOT-323

SC-70

MS2840

Microsemi Corporation

TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

Request a Quote

-

NSVF5488SKT3G

onsemi

BIP NPN 70MA 10V FT=7G

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 1GHz
Gain: 12dB
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 5V
Current - Collector (Ic) (Max): 70mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-623F
Supplier Device Package: SOT-623/SSFP

パッケージ: -

在庫23,004

10V

7GHz

1dB @ 1GHz

12dB

100mW

90 @ 20mA, 5V

70mA

-55°C ~ 150°C (TJ)

Surface Mount

SOT-623F

SOT-623/SSFP

NSVF4017SG4T1G

onsemi

RF TRANS NPN 12V 10GHZ SC82FL/

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Gain: 17dB
Power - Max: 450mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Supplier Device Package: SC-82FL/MCPH4

パッケージ: -

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12V

10GHz

1.2dB @ 1GHz

17dB

450mW

60 @ 50mA, 5V

100mA

-55°C ~ 150°C (TJ)

Surface Mount

4-SMD, Flat Leads

SC-82FL/MCPH4

2SA1702S-AN

onsemi

2SA1702S - SMALL SIGNAL BIPOLAR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

Request a Quote

-