ページ 52 - トランジスタ - バイポーラ(BJT) - RF | ディスクリート半導体製品 | Heisener Electronics
連絡先
SalesDept@heisener.com 86-755-83210559-817
Language Translation

* Please refer to the English Version as our Official Version.

トランジスタ - バイポーラ(BJT) - RF

レコード 1,633
ページ  52/55
画像
部品番号
メーカ
説明
パッケージ
在庫
数量
Voltage - Collector Emitter Breakdown (Max)
Frequency - Transition
Noise Figure (dB Typ @ f)
Gain
Power - Max
DC Current Gain (hFE) (Min) @ Ic, Vce
Current - Collector (Ic) (Max)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
MRF553T
Microsemi Corporation

TRANS NPN 16V 500MA POWERMACRO

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 16V
  • Frequency - Transition: 175MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 11.5dB
  • Power - Max: 3W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 5V
  • Current - Collector (Ic) (Max): 500mA
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: Power Macro
  • Supplier Device Package: Power Macro
パッケージ: Power Macro
在庫6,080
16V
175MHz
-
11.5dB
3W
30 @ 250mA, 5V
500mA
-
Surface Mount
Power Macro
Power Macro
hot NE66219-A
CEL

RF TRANSISTOR NPN SOT-523

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 3.3V
  • Frequency - Transition: 21GHz
  • Noise Figure (dB Typ @ f): 1.2dB @ 2GHz
  • Gain: 14dB
  • Power - Max: 115mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 2V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-523
  • Supplier Device Package: SOT-523
パッケージ: SOT-523
在庫36,000
3.3V
21GHz
1.2dB @ 2GHz
14dB
115mW
60 @ 5mA, 2V
35mA
150°C (TJ)
Surface Mount
SOT-523
SOT-523
MRF555
Microsemi Corporation

TRANS NPN 16V 500MA POWERMACRO

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 16V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: 11dB ~ 13dB
  • Power - Max: 3W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 5V
  • Current - Collector (Ic) (Max): 500mA
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: Power Macro
  • Supplier Device Package: Power Macro
パッケージ: Power Macro
在庫7,664
16V
-
-
11dB ~ 13dB
3W
30 @ 250mA, 5V
500mA
-
Surface Mount
Power Macro
Power Macro
2SC3937G0L
Panasonic Electronic Components

TRANS NPN 10VCEO 80MA SMINI-3

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 6GHz
  • Noise Figure (dB Typ @ f): 1dB ~ 1.7dB @ 800MHz
  • Gain: 13dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 8V
  • Current - Collector (Ic) (Max): 80mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-85
  • Supplier Device Package: SMini3-F2
パッケージ: SC-85
在庫3,600
10V
6GHz
1dB ~ 1.7dB @ 800MHz
13dB
150mW
50 @ 20mA, 8V
80mA
150°C (TJ)
Surface Mount
SC-85
SMini3-F2
hot CA3127MZ
Intersil

TRANSISTOR ARRAY NPN 16-SOIC

  • Transistor Type: 5 NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 1.15GHz
  • Noise Figure (dB Typ @ f): 3.5dB @ 100MHz
  • Gain: 27dB ~ 30dB
  • Power - Max: 85mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 6V
  • Current - Collector (Ic) (Max): 20mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 16-SOIC
パッケージ: 16-SOIC (0.154", 3.90mm Width)
在庫183,948
15V
1.15GHz
3.5dB @ 100MHz
27dB ~ 30dB
85mW
35 @ 5mA, 6V
20mA
150°C (TJ)
Surface Mount
16-SOIC (0.154", 3.90mm Width)
16-SOIC
AT-41532-BLKG
Broadcom Limited

TRANS NPN BIPO 12V 50MA SOT-323

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 1dB ~ 1.9dB @ 900MHz ~ 2.4GHz
  • Gain: 9dB ~ 15.5dB
  • Power - Max: 225mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SC-70-3
パッケージ: SC-70, SOT-323
在庫2,032
12V
-
1dB ~ 1.9dB @ 900MHz ~ 2.4GHz
9dB ~ 15.5dB
225mW
30 @ 5mA, 5V
50mA
150°C (TJ)
Surface Mount
SC-70, SOT-323
SC-70-3
NE85630-T1-R25-A
CEL

RF TRANSISTOR NPN SOT-323

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 4.5GHz
  • Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
  • Gain: 9dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 7mA, 3V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
パッケージ: SC-70, SOT-323
在庫6,416
12V
4.5GHz
1.2dB @ 1GHz
9dB
150mW
125 @ 7mA, 3V
100mA
150°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323
NE85630-T1-R24-A
CEL

RF TRANSISTOR NPN SOT-323

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 4.5GHz
  • Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
  • Gain: 9dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 7mA, 3V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
パッケージ: SC-70, SOT-323
在庫7,648
12V
4.5GHz
1.2dB @ 1GHz
9dB
150mW
70 @ 7mA, 3V
100mA
150°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323
NE687M03-T1-A
CEL

TRANSISTOR NPN 2GHZ MINIMOLD

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 3V
  • Frequency - Transition: 14GHz
  • Noise Figure (dB Typ @ f): 1.3dB ~ 2dB @ 2GHz
  • Gain: -
  • Power - Max: 90mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 20mA, 2V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-623F
  • Supplier Device Package: 3-SuperMiniMold (M03)
パッケージ: SOT-623F
在庫4,704
3V
14GHz
1.3dB ~ 2dB @ 2GHz
-
90mW
70 @ 20mA, 2V
30mA
150°C (TJ)
Surface Mount
SOT-623F
3-SuperMiniMold (M03)
NE68133-A
CEL

RF TRANSISTOR NPN SOT-23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 9GHz
  • Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
  • Gain: 13dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 8V
  • Current - Collector (Ic) (Max): 65mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
パッケージ: TO-236-3, SC-59, SOT-23-3
在庫4,416
10V
9GHz
1.2dB @ 1GHz
13dB
200mW
50 @ 20mA, 8V
65mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
2SC39320SL
Panasonic Electronic Components

TRANS NPN 20VCEO 50MA SMINI-3P

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 1.6GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 20dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 2mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SMini3-G1
パッケージ: SC-70, SOT-323
在庫2,032
20V
1.6GHz
-
20dB
150mW
1000 @ 2mA, 10V
50mA
150°C (TJ)
Surface Mount
SC-70, SOT-323
SMini3-G1
BFG425W,115
NXP

TRANS NPN 4.5V 25GHZ SOT-343R

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 4.5V
  • Frequency - Transition: 25GHz
  • Noise Figure (dB Typ @ f): 0.8dB ~ 1.2dB @ 900MHz ~ 2GHz
  • Gain: 20dB
  • Power - Max: 135mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 25mA, 2V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: CMPAK-4
パッケージ: SC-82A, SOT-343
在庫4,304
4.5V
25GHz
0.8dB ~ 1.2dB @ 900MHz ~ 2GHz
20dB
135mW
50 @ 25mA, 2V
30mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
CMPAK-4
BFR520,215
NXP

TRANS NPN 70MA 15V 9GHZ SOT23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 9GHz
  • Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz
  • Gain: -
  • Power - Max: 300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V
  • Current - Collector (Ic) (Max): 70mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
パッケージ: TO-236-3, SC-59, SOT-23-3
在庫3,232
15V
9GHz
1.1dB ~ 2.1dB @ 900MHz
-
300mW
60 @ 20mA, 6V
70mA
175°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB (SOT23)
PH3134-55L
M/A-Com Technology Solutions

TRANSISTOR BIPOLAR 3.10-3.40GHZ

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: 7.5dB
  • Power - Max: 55W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): 6.5A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫5,104
65V
-
-
7.5dB
55W
-
6.5A
200°C (TJ)
Chassis Mount
-
-
MSC1350M
Microsemi Corporation

TRANS RF BIPO 720W 19.8A M218

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.025GHz ~ 1.15GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 7dB ~ 7.1dB
  • Power - Max: 720W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V
  • Current - Collector (Ic) (Max): 19.8A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M218
  • Supplier Device Package: M218
パッケージ: M218
在庫6,816
65V
1.025GHz ~ 1.15GHz
-
7dB ~ 7.1dB
720W
15 @ 1A, 5V
19.8A
200°C (TJ)
Chassis Mount
M218
M218
15GN03CA-TB-E
ON Semiconductor

TRANS NPN BIPO 70MA 10V CP

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 1.5GHz
  • Noise Figure (dB Typ @ f): 1.6dB @ 0.4GHz
  • Gain: 13dB @ 0.4GHz
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
  • Current - Collector (Ic) (Max): 70mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: 3-CP
パッケージ: TO-236-3, SC-59, SOT-23-3
在庫5,024
10V
1.5GHz
1.6dB @ 0.4GHz
13dB @ 0.4GHz
200mW
100 @ 10mA, 5V
70mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
3-CP
hot HFA3102BZ
Intersil

IC TRANS ARRAY DUAL NPN 14-SOIC

  • Transistor Type: 6 NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 10GHz
  • Noise Figure (dB Typ @ f): 1.8dB ~ 2.1dB @ 500MHz ~ 1GHz
  • Gain: 12.4dB ~ 17.5dB
  • Power - Max: 250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 3V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 14-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 14-SOIC
パッケージ: 14-SOIC (0.154", 3.90mm Width)
在庫5,328
12V
10GHz
1.8dB ~ 2.1dB @ 500MHz ~ 1GHz
12.4dB ~ 17.5dB
250mW
40 @ 10mA, 3V
30mA
150°C (TJ)
Surface Mount
14-SOIC (0.154", 3.90mm Width)
14-SOIC
CMPTH81 TR
Central Semiconductor Corp

TRANS PNP 20V 50MA SOT23

  • Transistor Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 600MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 225mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
パッケージ: TO-236-3, SC-59, SOT-23-3
在庫2,880
20V
600MHz
-
-
225mW
60 @ 5mA, 10V
50mA
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
2SC393700L
Panasonic Electronic Components

TRANS NPN 10VCEO 80MA SMINI-3

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 6GHz
  • Noise Figure (dB Typ @ f): 1dB ~ 1.7dB @ 800MHz
  • Gain: 13dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 8V
  • Current - Collector (Ic) (Max): 80mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SMini3-G1
パッケージ: SC-70, SOT-323
在庫25,380
10V
6GHz
1dB ~ 1.7dB @ 800MHz
13dB
150mW
50 @ 20mA, 8V
80mA
150°C (TJ)
Surface Mount
SC-70, SOT-323
SMini3-G1
hot MMBTH24
Fairchild/ON Semiconductor

TRANSISTOR RF NPN SOT-23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Frequency - Transition: 400MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 225mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 8mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
パッケージ: TO-236-3, SC-59, SOT-23-3
在庫37,908
30V
400MHz
-
-
225mW
30 @ 8mA, 10V
50mA
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
hot MMBTH10-4LT1G
ON Semiconductor

TRANS VHF/UHF NPN 25V SOT-23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Frequency - Transition: 800MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 225mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 4mA, 10V
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
パッケージ: TO-236-3, SC-59, SOT-23-3
在庫569,856
25V
800MHz
-
-
225mW
120 @ 4mA, 10V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
hot HFA3127BZ
Intersil

IC TRANSISTOR ARRAY UHF 16-SOIC

  • Transistor Type: 5 NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 3.5dB @ 1GHz
  • Gain: -
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 2V
  • Current - Collector (Ic) (Max): 65mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 16-SOIC
パッケージ: 16-SOIC (0.154", 3.90mm Width)
在庫6,336
12V
8GHz
3.5dB @ 1GHz
-
150mW
40 @ 10mA, 2V
65mA
150°C (TJ)
Surface Mount
16-SOIC (0.154", 3.90mm Width)
16-SOIC
SD1372-01H
Microsemi Corporation

RF POWER TRANSISTOR

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
2SA1461-T2B-A
Renesas Electronics Corporation

HIGH FREQUENCY PNP TRANSISTOR

  • Transistor Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Frequency - Transition: 510MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 1V
  • Current - Collector (Ic) (Max): 200mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SC-59
パッケージ: -
Request a Quote
40V
510MHz
-
-
200mW
75 @ 10mA, 1V
200mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SC-59
MT3S113P-TE12L-F
Toshiba Semiconductor and Storage

RF TRANS NPN 5.3V 7.7GHZ PW-MINI

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5.3V
  • Frequency - Transition: 7.7GHz
  • Noise Figure (dB Typ @ f): 1.45dB @ 1GHz
  • Gain: 10.5dB
  • Power - Max: 1.6W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: PW-MINI
パッケージ: -
在庫18
5.3V
7.7GHz
1.45dB @ 1GHz
10.5dB
1.6W
200 @ 30mA, 5V
100mA
150°C (TJ)
Surface Mount
TO-243AA
PW-MINI
BFR193L3E6327XTMA1
Infineon Technologies

RF TRANS NPN 12V 8GHZ TSLP-3-1

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
  • Gain: 12.5dB ~ 19dB
  • Power - Max: 580mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
  • Current - Collector (Ic) (Max): 80mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: PG-TSLP-3-1
パッケージ: -
Request a Quote
12V
8GHz
1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
12.5dB ~ 19dB
580mW
70 @ 30mA, 8V
80mA
150°C (TJ)
Surface Mount
SC-101, SOT-883
PG-TSLP-3-1
NTE224
NTE Electronics, Inc

RF TRANS NPN 60V 300MHZ TO39

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Frequency - Transition: 300MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 10W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V
  • Current - Collector (Ic) (Max): 2A
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-39 W/flange 
  • Supplier Device Package: TO-39 W/flange 
パッケージ: -
Request a Quote
60V
300MHz
-
-
10W
10 @ 500mA, 5V
2A
175°C (TJ)
Through Hole
TO-39 W/flange 
TO-39 W/flange 
NTE235
NTE Electronics, Inc

RF TRANS NPN 75V 150MHZ TO220

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 75V
  • Frequency - Transition: 150MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 1.2W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 500mA, 5V
  • Current - Collector (Ic) (Max): 3A
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
パッケージ: -
Request a Quote
75V
150MHz
-
-
1.2W
25 @ 500mA, 5V
3A
150°C (TJ)
Through Hole
TO-220-3
TO-220
CP229-2N5109-WN
Central Semiconductor Corp

RF TRANSISTOR TO-39

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 1.2GHz
  • Noise Figure (dB Typ @ f): 3dB @ 200MHz
  • Gain: 11dB
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 15V
  • Current - Collector (Ic) (Max): 400mA
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
パッケージ: -
Request a Quote
20V
1.2GHz
3dB @ 200MHz
11dB
-
40 @ 50mA, 15V
400mA
-65°C ~ 200°C (TJ)
Surface Mount
Die
Die
MS2502A
Microsemi Corporation

RF POWER TRANSISTOR

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-