ページ 50 - トランジスタ - バイポーラ（BJT） - RF | ディスクリート半導体製品

部品番号	メーカ	説明	パッケージ	在庫	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BFP450E6433BTMA1	Infineon Technologies	TRANSISTOR NPN RF 4.5V SOT-343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 24GHz Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz Gain: 15.5dB Power - Max: 450mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 4V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	パッケージ: SC-82A, SOT-343	在庫2,384	5V	24GHz	1.25dB @ 1.8GHz	15.5dB	450mW	60 @ 50mA, 4V	100mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	PG-SOT343-4
BFP420E6327BTSA1	Infineon Technologies	TRANS NPN RF 4.5V SOT-343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 25GHz Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz Gain: 21dB Power - Max: 160mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	パッケージ: SC-82A, SOT-343	在庫3,776	5V	25GHz	1.1dB @ 1.8GHz	21dB	160mW	60 @ 20mA, 4V	35mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	PG-SOT343-4
NE67718-T1-A	CEL	RF TRANSISTOR NPN SOT-343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 6V Frequency - Transition: 15GHz Noise Figure (dB Typ @ f): 1.7dB @ 2GHz Gain: 15dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 20mA, 3V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: SOT-343	パッケージ: SC-82A, SOT-343	在庫6,128	6V	15GHz	1.7dB @ 2GHz	15dB	200mW	75 @ 20mA, 3V	50mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	SOT-343
MS2321	Microsemi Corporation	TRANS RF BIPO 87.5W 1.5A M104 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 10dB Power - Max: 87.5W DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 1.5A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M105 Supplier Device Package: M105	パッケージ: M105	在庫2,768	65V	1.025GHz ~ 1.15GHz	-	10dB	87.5W	-	1.5A	200°C (TJ)	Chassis Mount	M105	M105
2225-4L	Microsemi Corporation	TRANS RF BIPO 10W 600MA 55LV1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 40V Frequency - Transition: 2.2GHz ~ 2.5GHz Noise Figure (dB Typ @ f): - Gain: 8.5dB Power - Max: 10W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 200mA, 5V Current - Collector (Ic) (Max): 600mA Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55LV Supplier Device Package: 55LV	パッケージ: 55LV	在庫3,712	40V	2.2GHz ~ 2.5GHz	-	8.5dB	10W	20 @ 200mA, 5V	600mA	200°C (TJ)	Chassis Mount	55LV	55LV
NE68030-T1-R45-A	CEL	RF TRANSISTOR NPN SOT-323 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 1.9dB @ 2GHz Gain: 9.4dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 5mA, 3V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	パッケージ: SC-70, SOT-323	在庫2,720	10V	10GHz	1.9dB @ 2GHz	9.4dB	150mW	125 @ 5mA, 3V	35mA	150°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323
MRF555T	Microsemi Corporation	TRANS NPN 16V 500MA POWERMACRO Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 16V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 11dB ~ 12.5dB Power - Max: 3W DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 5V Current - Collector (Ic) (Max): 500mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: Power Macro Supplier Device Package: Power Macro	パッケージ: Power Macro	在庫2,192	16V	-	-	11dB ~ 12.5dB	3W	50 @ 100mA, 5V	500mA	-	Surface Mount	Power Macro	Power Macro
PN3563_D74Z	Fairchild/ON Semiconductor	TRANS RF NPN 15V 50MA TO-92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 1.5GHz Noise Figure (dB Typ @ f): - Gain: 14dB ~ 26dB Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 8mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	パッケージ: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	在庫7,088	15V	1.5GHz	-	14dB ~ 26dB	350mW	20 @ 8mA, 10V	50mA	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
BF959ZL1	ON Semiconductor	TRANS RF NPN 20V 100MA TO-92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 700MHz Noise Figure (dB Typ @ f): 3dB @ 200MHz Gain: - Power - Max: 625mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	パッケージ: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	在庫6,416	20V	700MHz	3dB @ 200MHz	-	625mW	40 @ 20mA, 10V	100mA	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
CA3127M	Intersil	TRANSISTOR ARRAY NPN 16-SOIC Transistor Type: 5 NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 1.15GHz Noise Figure (dB Typ @ f): 3.5dB @ 100MHz Gain: 27dB ~ 30dB Power - Max: 85mW DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 6V Current - Collector (Ic) (Max): 20mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	パッケージ: 16-SOIC (0.154", 3.90mm Width)	在庫3,536	15V	1.15GHz	3.5dB @ 100MHz	27dB ~ 30dB	85mW	35 @ 5mA, 6V	20mA	150°C (TJ)	Surface Mount	16-SOIC (0.154", 3.90mm Width)	16-SOIC
KSC2786YTA	Fairchild/ON Semiconductor	TRANSISTOR NPN 20V 20MA TO-92S Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 600MHz Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz Gain: 18dB ~ 22dB Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Current - Collector (Ic) (Max): 20mA Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads) Supplier Device Package: TO-92S	パッケージ: TO-226-3, TO-92-3 Short Body (Formed Leads)	在庫6,928	20V	600MHz	3dB ~ 5dB @ 100MHz	18dB ~ 22dB	250mW	120 @ 1mA, 6V	20mA	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Short Body (Formed Leads)	TO-92S
KSC3123YMTF	Fairchild/ON Semiconductor	TRANSISTOR NPN 20V 50MA SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 1.4GHz Noise Figure (dB Typ @ f): 3.8dB ~ 5.5dB @ 200MHz Gain: 20dB ~ 23dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	パッケージ: TO-236-3, SC-59, SOT-23-3	在庫432,000	20V	1.4GHz	3.8dB ~ 5.5dB @ 200MHz	20dB ~ 23dB	150mW	120 @ 5mA, 10V	50mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
MPSH17	ON Semiconductor	TRANS NPN RF SS 15V TO92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 800MHz Noise Figure (dB Typ @ f): 6dB @ 200MHz Gain: 24dB Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 5mA, 10V Current - Collector (Ic) (Max): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	パッケージ: TO-226-3, TO-92-3 (TO-226AA)	在庫36,000	15V	800MHz	6dB @ 200MHz	24dB	350mW	25 @ 5mA, 10V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
BFQ67,215	NXP	TRANS NPN 50MA 10V 8GHZ SOT23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1.3dB ~ 3dB @ 1GHz ~ 2GHz Gain: - Power - Max: 300mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 5V Current - Collector (Ic) (Max): 50mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB (SOT23)	パッケージ: TO-236-3, SC-59, SOT-23-3	在庫7,184	10V	8GHz	1.3dB ~ 3dB @ 1GHz ~ 2GHz	-	300mW	60 @ 15mA, 5V	50mA	175°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB (SOT23)
MS2422	Microsemi Corporation	TRANS RF BIPO 875W 22A M138 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 960MHz ~ 1.215GHz Noise Figure (dB Typ @ f): - Gain: 6.3dB Power - Max: 875W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V Current - Collector (Ic) (Max): 22A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M138 Supplier Device Package: M138	パッケージ: M138	在庫5,552	65V	960MHz ~ 1.215GHz	-	6.3dB	875W	10 @ 1A, 5V	22A	200°C (TJ)	Chassis Mount	M138	M138
2SC5415AE-TD-E	ON Semiconductor	TRANS NPN BIPO HI FREQ PCP Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 6.7GHz Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Gain: 9dB Power - Max: 800mW DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 30mA, 5V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PCP	パッケージ: TO-243AA	在庫5,136	12V	6.7GHz	1.1dB @ 1GHz	9dB	800mW	90 @ 30mA, 5V	100mA	150°C (TJ)	Surface Mount	TO-243AA	PCP
BFU530WF	NXP	TRANS RF NPN 12V 40MA SOT-323 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 11GHz Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz Gain: 12.5dB Power - Max: 450mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 8V Current - Collector (Ic) (Max): 40mA Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323-3	パッケージ: SC-70, SOT-323	在庫6,752	12V	11GHz	1.1dB @ 1.8GHz	12.5dB	450mW	60 @ 10mA, 8V	40mA	-40°C ~ 150°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323-3
NSVMMBTH10LT1G	ON Semiconductor	TRANS SS VHF MIXER NPN 25V SOT23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 25V Frequency - Transition: 650MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 225mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V Current - Collector (Ic) (Max): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	パッケージ: TO-236-3, SC-59, SOT-23-3	在庫5,504	25V	650MHz	-	-	225mW	60 @ 4mA, 10V	-	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
NE664M04-T2-A	CEL	RF TRANSISTOR NPN SOT-343F Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 20GHz Noise Figure (dB Typ @ f): - Gain: 12dB Power - Max: 735mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 3V Current - Collector (Ic) (Max): 500mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-343F Supplier Device Package: SOT-343F	パッケージ: SOT-343F	在庫5,136	5V	20GHz	-	12dB	735mW	40 @ 100mA, 3V	500mA	150°C (TJ)	Surface Mount	SOT-343F	SOT-343F
PH1090-175L	M/A-Com Technology Solutions	TRANSISTOR BIPOLAR 175W 1090MHZ Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 80V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 8.58dB Power - Max: 188W DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 10.5A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: - Supplier Device Package: -	パッケージ: -	在庫3,904	80V	-	-	8.58dB	188W	-	10.5A	200°C (TJ)	Chassis Mount	-	-
2SC5085-O(TE85L,F)	Toshiba Semiconductor and Storage	TRANS RF NPN 12V 1MHZ USM Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1dB @ 500MHz Gain: - Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V Current - Collector (Ic) (Max): 80mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM	パッケージ: SC-70, SOT-323	在庫5,664	12V	7GHz	1dB @ 500MHz	-	100mW	80 @ 20mA, 10V	80mA	125°C (TJ)	Surface Mount	SC-70, SOT-323	USM
MMBTH10LT1G	ON Semiconductor	TRANS SS VHF MIXER NPN 25V SOT23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 25V Frequency - Transition: 650MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 225mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V Current - Collector (Ic) (Max): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	パッケージ: TO-236-3, SC-59, SOT-23-3	在庫2,540,220	25V	650MHz	-	-	225mW	60 @ 4mA, 10V	-	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
MPSH17-D26Z	Fairchild Semiconductor	TRANS NPN 15V TO-92 Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
2SC5455-A	CEL	RF TRANS NPN 6V 12GHZ SOT143 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 6V Frequency - Transition: 12GHz Noise Figure (dB Typ @ f): 1.5dB @ 2GHz Gain: 10dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 30mA, 3V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: -	パッケージ: -	Request a Quote	6V	12GHz	1.5dB @ 2GHz	10dB	200mW	75 @ 30mA, 3V	100mA	150°C (TJ)	Surface Mount	TO-253-4, TO-253AA	-
SS9018HBU-FS	Fairchild Semiconductor	RF 0.05A, VERY HIGH FREQUENCY BA Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 1.1GHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 400mW DC Current Gain (hFE) (Min) @ Ic, Vce: 28 @ 1mA, 5V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	パッケージ: -	Request a Quote	15V	1.1GHz	-	-	400mW	28 @ 1mA, 5V	50mA	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
PH1214-220M	MACOM Technology Solutions	TRANSISTOR,220W,1.2-1.4GHZ,150US Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 70V Frequency - Transition: 1.4GHz Noise Figure (dB Typ @ f): - Gain: 7.4dB Power - Max: 700W DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 21A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 2L-FLG Supplier Device Package: 2L-FLG	パッケージ: -	Request a Quote	70V	1.4GHz	-	7.4dB	700W	-	21A	200°C (TJ)	Chassis Mount	2L-FLG	2L-FLG
MAPR-001090-350S00	MACOM Technology Solutions	TRANSISTOR,350WPK,1.09GHZ Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 9dB Power - Max: 1100W DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 25A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 2L-FLG Supplier Device Package: 2L-FLG	パッケージ: -	Request a Quote	65V	-	-	9dB	1100W	-	25A	200°C (TJ)	Chassis Mount	2L-FLG	2L-FLG
MSC1450A	Microsemi Corporation	RF TRANS 65V M216 Transistor Type: - Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 7dB Power - Max: 910W DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V Current - Collector (Ic) (Max): 28A Operating Temperature: 250°C Mounting Type: Chassis Mount Package / Case: M216 Supplier Device Package: M216	パッケージ: -	Request a Quote	65V	-	-	7dB	910W	15 @ 1A, 5V	28A	250°C	Chassis Mount	M216	M216

BFP450E6433BTMA1

Infineon Technologies

TRANSISTOR NPN RF 4.5V SOT-343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5V
Frequency - Transition: 24GHz
Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz
Gain: 15.5dB
Power - Max: 450mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 4V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: PG-SOT343-4

パッケージ: SC-82A, SOT-343

在庫2,384

5V

24GHz

1.25dB @ 1.8GHz

15.5dB

450mW

60 @ 50mA, 4V

100mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

PG-SOT343-4

BFP420E6327BTSA1

Infineon Technologies

TRANS NPN RF 4.5V SOT-343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Gain: 21dB
Power - Max: 160mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: PG-SOT343-4

パッケージ: SC-82A, SOT-343

在庫3,776

5V

25GHz

1.1dB @ 1.8GHz

21dB

160mW

60 @ 20mA, 4V

35mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

PG-SOT343-4

NE67718-T1-A

CEL

RF TRANSISTOR NPN SOT-343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 6V
Frequency - Transition: 15GHz
Noise Figure (dB Typ @ f): 1.7dB @ 2GHz
Gain: 15dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 20mA, 3V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: SOT-343

パッケージ: SC-82A, SOT-343

在庫6,128

6V

15GHz

1.7dB @ 2GHz

15dB

200mW

75 @ 20mA, 3V

50mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

SOT-343

MS2321

Microsemi Corporation

TRANS RF BIPO 87.5W 1.5A M104

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f): -
Gain: 10dB
Power - Max: 87.5W
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 1.5A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M105
Supplier Device Package: M105

パッケージ: M105

在庫2,768

65V

1.025GHz ~ 1.15GHz

-

10dB

87.5W

-

1.5A

200°C (TJ)

Chassis Mount

M105

2225-4L

Microsemi Corporation

TRANS RF BIPO 10W 600MA 55LV1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 40V
Frequency - Transition: 2.2GHz ~ 2.5GHz
Noise Figure (dB Typ @ f): -
Gain: 8.5dB
Power - Max: 10W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 200mA, 5V
Current - Collector (Ic) (Max): 600mA
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55LV
Supplier Device Package: 55LV

パッケージ: 55LV

在庫3,712

40V

2.2GHz ~ 2.5GHz

-

8.5dB

10W

20 @ 200mA, 5V

600mA

200°C (TJ)

Chassis Mount

55LV

NE68030-T1-R45-A

CEL

RF TRANSISTOR NPN SOT-323

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.9dB @ 2GHz
Gain: 9.4dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 5mA, 3V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

パッケージ: SC-70, SOT-323

在庫2,720

10V

10GHz

1.9dB @ 2GHz

9.4dB

150mW

125 @ 5mA, 3V

35mA

150°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323

MRF555T

Microsemi Corporation

TRANS NPN 16V 500MA POWERMACRO

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 16V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 11dB ~ 12.5dB
Power - Max: 3W
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 5V
Current - Collector (Ic) (Max): 500mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: Power Macro
Supplier Device Package: Power Macro

パッケージ: Power Macro

在庫2,192

16V

-

11dB ~ 12.5dB

3W

50 @ 100mA, 5V

500mA

-

Surface Mount

Power Macro

PN3563_D74Z

Fairchild/ON Semiconductor

TRANS RF NPN 15V 50MA TO-92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 1.5GHz
Noise Figure (dB Typ @ f): -
Gain: 14dB ~ 26dB
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 8mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

パッケージ: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

在庫7,088

15V

1.5GHz

-

14dB ~ 26dB

350mW

20 @ 8mA, 10V

50mA

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

BF959ZL1

ON Semiconductor

TRANS RF NPN 20V 100MA TO-92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 700MHz
Noise Figure (dB Typ @ f): 3dB @ 200MHz
Gain: -
Power - Max: 625mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

パッケージ: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

在庫6,416

20V

700MHz

3dB @ 200MHz

-

625mW

40 @ 20mA, 10V

100mA

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

CA3127M

Intersil

TRANSISTOR ARRAY NPN 16-SOIC

Transistor Type: 5 NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 1.15GHz
Noise Figure (dB Typ @ f): 3.5dB @ 100MHz
Gain: 27dB ~ 30dB
Power - Max: 85mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 6V
Current - Collector (Ic) (Max): 20mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC

パッケージ: 16-SOIC (0.154", 3.90mm Width)

在庫3,536

15V

1.15GHz

3.5dB @ 100MHz

27dB ~ 30dB

85mW

35 @ 5mA, 6V

20mA

150°C (TJ)

Surface Mount

16-SOIC (0.154", 3.90mm Width)

16-SOIC

KSC2786YTA

Fairchild/ON Semiconductor

TRANSISTOR NPN 20V 20MA TO-92S

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 600MHz
Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz
Gain: 18dB ~ 22dB
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector (Ic) (Max): 20mA
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads)
Supplier Device Package: TO-92S

パッケージ: TO-226-3, TO-92-3 Short Body (Formed Leads)

在庫6,928

20V

600MHz

3dB ~ 5dB @ 100MHz

18dB ~ 22dB

250mW

120 @ 1mA, 6V

20mA

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Short Body (Formed Leads)

TO-92S

KSC3123YMTF

Fairchild/ON Semiconductor

TRANSISTOR NPN 20V 50MA SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 1.4GHz
Noise Figure (dB Typ @ f): 3.8dB ~ 5.5dB @ 200MHz
Gain: 20dB ~ 23dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)

パッケージ: TO-236-3, SC-59, SOT-23-3

在庫432,000

20V

1.4GHz

3.8dB ~ 5.5dB @ 200MHz

20dB ~ 23dB

150mW

120 @ 5mA, 10V

50mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

MPSH17

ON Semiconductor

TRANS NPN RF SS 15V TO92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 800MHz
Noise Figure (dB Typ @ f): 6dB @ 200MHz
Gain: 24dB
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 5mA, 10V
Current - Collector (Ic) (Max): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

パッケージ: TO-226-3, TO-92-3 (TO-226AA)

在庫36,000

15V

800MHz

6dB @ 200MHz

24dB

350mW

25 @ 5mA, 10V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

BFQ67,215

NXP

TRANS NPN 50MA 10V 8GHZ SOT23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 3dB @ 1GHz ~ 2GHz
Gain: -
Power - Max: 300mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 5V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)

パッケージ: TO-236-3, SC-59, SOT-23-3

在庫7,184

10V

8GHz

1.3dB ~ 3dB @ 1GHz ~ 2GHz

-

300mW

60 @ 15mA, 5V

50mA

175°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

TO-236AB (SOT23)

MS2422

Microsemi Corporation

TRANS RF BIPO 875W 22A M138

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 960MHz ~ 1.215GHz
Noise Figure (dB Typ @ f): -
Gain: 6.3dB
Power - Max: 875W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
Current - Collector (Ic) (Max): 22A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M138
Supplier Device Package: M138

パッケージ: M138

在庫5,552

65V

960MHz ~ 1.215GHz

-

6.3dB

875W

10 @ 1A, 5V

22A

200°C (TJ)

Chassis Mount

M138

2SC5415AE-TD-E

ON Semiconductor

TRANS NPN BIPO HI FREQ PCP

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 6.7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Gain: 9dB
Power - Max: 800mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 30mA, 5V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: PCP

パッケージ: TO-243AA

在庫5,136

12V

6.7GHz

1.1dB @ 1GHz

9dB

800mW

90 @ 30mA, 5V

100mA

150°C (TJ)

Surface Mount

TO-243AA

PCP

BFU530WF

NXP

TRANS RF NPN 12V 40MA SOT-323

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 11GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Gain: 12.5dB
Power - Max: 450mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 8V
Current - Collector (Ic) (Max): 40mA
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323-3

パッケージ: SC-70, SOT-323

在庫6,752

12V

11GHz

1.1dB @ 1.8GHz

12.5dB

450mW

60 @ 10mA, 8V

40mA

-40°C ~ 150°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323-3

NSVMMBTH10LT1G

ON Semiconductor

TRANS SS VHF MIXER NPN 25V SOT23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: 650MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 225mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Current - Collector (Ic) (Max): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

パッケージ: TO-236-3, SC-59, SOT-23-3

在庫5,504

25V

650MHz

-

225mW

60 @ 4mA, 10V

-

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

NE664M04-T2-A

CEL

RF TRANSISTOR NPN SOT-343F

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5V
Frequency - Transition: 20GHz
Noise Figure (dB Typ @ f): -
Gain: 12dB
Power - Max: 735mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 3V
Current - Collector (Ic) (Max): 500mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-343F
Supplier Device Package: SOT-343F

パッケージ: SOT-343F

在庫5,136

5V

20GHz

-

12dB

735mW

40 @ 100mA, 3V

500mA

150°C (TJ)

Surface Mount

SOT-343F

PH1090-175L

M/A-Com Technology Solutions

TRANSISTOR BIPOLAR 175W 1090MHZ

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 80V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 8.58dB
Power - Max: 188W
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 10.5A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫3,904

80V

-

8.58dB

188W

-

10.5A

200°C (TJ)

Chassis Mount

-

2SC5085-O(TE85L,F)

Toshiba Semiconductor and Storage

TRANS RF NPN 12V 1MHZ USM

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 500MHz
Gain: -
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: USM

パッケージ: SC-70, SOT-323

在庫5,664

12V

7GHz

1dB @ 500MHz

-

100mW

80 @ 20mA, 10V

80mA

125°C (TJ)

Surface Mount

SC-70, SOT-323

USM

MMBTH10LT1G

ON Semiconductor

TRANS SS VHF MIXER NPN 25V SOT23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: 650MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 225mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Current - Collector (Ic) (Max): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)

パッケージ: TO-236-3, SC-59, SOT-23-3

在庫2,540,220

25V

650MHz

-

225mW

60 @ 4mA, 10V

-

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

MPSH17-D26Z

Fairchild Semiconductor

TRANS NPN 15V TO-92

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

Request a Quote

-

2SC5455-A

CEL

RF TRANS NPN 6V 12GHZ SOT143

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 6V
Frequency - Transition: 12GHz
Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
Gain: 10dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 30mA, 3V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: -

パッケージ: -

Request a Quote

6V

12GHz

1.5dB @ 2GHz

10dB

200mW

75 @ 30mA, 3V

100mA

150°C (TJ)

Surface Mount

TO-253-4, TO-253AA

-

SS9018HBU-FS

Fairchild Semiconductor

RF 0.05A, VERY HIGH FREQUENCY BA

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 1.1GHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 400mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 28 @ 1mA, 5V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

パッケージ: -

Request a Quote

15V

1.1GHz

-

400mW

28 @ 1mA, 5V

50mA

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

PH1214-220M

MACOM Technology Solutions

TRANSISTOR,220W,1.2-1.4GHZ,150US

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 70V
Frequency - Transition: 1.4GHz
Noise Figure (dB Typ @ f): -
Gain: 7.4dB
Power - Max: 700W
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 21A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 2L-FLG
Supplier Device Package: 2L-FLG

パッケージ: -

Request a Quote

70V

1.4GHz

-

7.4dB

700W

-

21A

200°C (TJ)

Chassis Mount

2L-FLG

MAPR-001090-350S00

MACOM Technology Solutions

TRANSISTOR,350WPK,1.09GHZ

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 9dB
Power - Max: 1100W
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 25A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 2L-FLG
Supplier Device Package: 2L-FLG

パッケージ: -

Request a Quote

65V

-

9dB

1100W

-

25A

200°C (TJ)

Chassis Mount

2L-FLG

MSC1450A

Microsemi Corporation

RF TRANS 65V M216

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 7dB
Power - Max: 910W
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V
Current - Collector (Ic) (Max): 28A
Operating Temperature: 250°C
Mounting Type: Chassis Mount
Package / Case: M216
Supplier Device Package: M216

パッケージ: -

Request a Quote

65V

-

7dB

910W

15 @ 1A, 5V

28A

250°C

Chassis Mount

M216