ページ 101 - トランジスタ - FET、MOSFET - アレイ | ディスクリート半導体製品

部品番号	メーカ	説明	パッケージ	在庫	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
AO9926BL_101	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7.6A Rds On (Max) @ Id, Vgs: 23 mOhm @ 7.6A, 10V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫7,952	Standard	20V	7.6A	23 mOhm @ 7.6A, 10V	1.1V @ 250µA	12.5nC @ 10V	630pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
EMH2409-TL-H	ON Semiconductor	MOSFET 2N-CH 30V 4A EMH8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 59 mOhm @ 2A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 10V Power - Max: 1.2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-EMH	パッケージ: 8-SMD, Flat Lead	在庫5,040	Logic Level Gate	30V	4A	59 mOhm @ 2A, 10V	-	4.4nC @ 10V	240pF @ 10V	1.2W	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	8-EMH
SI4942DY-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 40V 5.3A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 5.3A Rds On (Max) @ Id, Vgs: 21 mOhm @ 7.4A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫2,208	Logic Level Gate	40V	5.3A	21 mOhm @ 7.4A, 10V	3V @ 250µA	32nC @ 10V	-	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI4539ADY-T1-GE3	Vishay Siliconix	MOSFET N/P-CH 30V 4.4A 8-SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.4A, 3.7A Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.9A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫435,036	Logic Level Gate	30V	4.4A, 3.7A	36 mOhm @ 5.9A, 10V	1V @ 250µA (Min)	20nC @ 10V	-	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI3909DV-T1-E3	Vishay Siliconix	MOSFET 2P-CH 20V 6TSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.8A, 4.5V Vgs(th) (Max) @ Id: 500mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.15W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP	パッケージ: SOT-23-6 Thin, TSOT-23-6	在庫535,764	Logic Level Gate	20V	-	200 mOhm @ 1.8A, 4.5V	500mV @ 250µA (Min)	4nC @ 4.5V	-	1.15W	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	6-TSOP
SI4804BDY-T1-E3	Vishay Siliconix	MOSFET 2N-CH 30V 5.7A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.7A Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫1,059,888	Logic Level Gate	30V	5.7A	22 mOhm @ 7.5A, 10V	3V @ 250µA	11nC @ 4.5V	-	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
IPG20N04S4L07AATMA1	Infineon Technologies	MOSFET 2N-CH 8TDSON FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 2.2V @ 30µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3980pF @ 25V Power - Max: 65W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-10	パッケージ: 8-PowerVDFN	在庫2,752	Logic Level Gate	40V	20A	7.2 mOhm @ 17A, 10V	2.2V @ 30µA	50nC @ 10V	3980pF @ 25V	65W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PG-TDSON-8-10
IRF7104PBF	Infineon Technologies	MOSFET 2P-CH 20V 2.3A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.3A Rds On (Max) @ Id, Vgs: 250 mOhm @ 1A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫5,536	Logic Level Gate	20V	2.3A	250 mOhm @ 1A, 10V	3V @ 250µA	25nC @ 10V	290pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
GMM3X120-0075X2-SMDSAM	IXYS	MOSFET 6N-CH 75V 110A 24-SMD FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 110A Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 24-SMD, Gull Wing Supplier Device Package: 24-SMD	パッケージ: 24-SMD, Gull Wing	在庫2,112	Standard	75V	110A	-	4V @ 1mA	115nC @ 10V	-	-	-55°C ~ 175°C (TJ)	Surface Mount	24-SMD, Gull Wing	24-SMD
NVMFD5853NLWFT1G	ON Semiconductor	MOSFET 2N-CH 40V 12A SO8FL FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 12A Rds On (Max) @ Id, Vgs: 10 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V Power - Max: 3W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)	パッケージ: 8-PowerTDFN	在庫2,112	Logic Level Gate	40V	12A	10 mOhm @ 15A, 10V	2.4V @ 250µA	23nC @ 10V	1100pF @ 25V	3W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
FDWS9420_F085	Fairchild/ON Semiconductor	40V DUAL AUTO N-CH POWER TRENCH FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 20V Power - Max: 75W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-PQFN (5x6)	パッケージ: 8-PowerTDFN	在庫3,248	Standard	40V	20A (Tc)	5.8 mOhm @ 20A, 10V	4V @ 250µA	43nC @ 10V	2100pF @ 20V	75W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	8-PQFN (5x6)
SH8M41GZETB	Rohm Semiconductor	MOSFET N/P-CH 80V 3.4A/2.6A 8SOP FET Type: N and P-Channel FET Feature: Logic Level Gate, 4V Drive Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.6A Rds On (Max) @ Id, Vgs: 130 mOhm @ 3.4A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫3,888	Logic Level Gate, 4V Drive	80V	3.4A, 2.6A	130 mOhm @ 3.4A, 10V	2.5V @ 1mA	9.2nC @ 5V	600pF @ 10V	2W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
AON6906A	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 9.1A/10A 8DFN FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.1A, 10A Rds On (Max) @ Id, Vgs: 14.4 mOhm @ 9.1A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 15V Power - Max: 1.9W, 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: 8-DFN (5x6)	パッケージ: 8-PowerVDFN	在庫5,424	Logic Level Gate	30V	9.1A, 10A	14.4 mOhm @ 9.1A, 10V	2.4V @ 250µA	9nC @ 10V	670pF @ 15V	1.9W, 2W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	8-DFN (5x6)
PHN203,518	Nexperia USA Inc.	MOSFET 2N-CH 30V 6.3A SOT96-1 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.3A Rds On (Max) @ Id, Vgs: 30 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 14.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 20V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫7,232	Logic Level Gate	30V	6.3A	30 mOhm @ 7A, 10V	2V @ 1mA	14.6nC @ 10V	560pF @ 20V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
NVMFD5877NLT1G	ON Semiconductor	MOSFET 2N-CH 60V 6A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 39 mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V Power - Max: 3.2W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)	パッケージ: 8-PowerTDFN	在庫4,944	Logic Level Gate	60V	6A	39 mOhm @ 7.5A, 10V	3V @ 250µA	20nC @ 10V	540pF @ 25V	3.2W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
DI9942T	Diodes Incorporated	MOSFET N/P-CH 20V 2.5A 8-SOIC FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.5A Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.6W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫7,264	Standard	20V	2.5A	-	-	-	-	1.6W	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
BUK7K29-100EX	Nexperia USA Inc.	MOSFET 2N-CH 100V 29.5A LFPAK56 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 29.5A Rds On (Max) @ Id, Vgs: 24.5 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 38.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2436pF @ 25V Power - Max: 68W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Supplier Device Package: LFPAK56D	パッケージ: SOT-1205, 8-LFPAK56	在庫2,272	Standard	100V	29.5A	24.5 mOhm @ 10A, 10V	4V @ 1mA	38.1nC @ 10V	2436pF @ 25V	68W	-55°C ~ 175°C (TJ)	Surface Mount	SOT-1205, 8-LFPAK56	LFPAK56D
NTZD5110NT1G	ON Semiconductor	MOSFET 2N-CH 60V 0.294A SOT563 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 294mA Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 24.5pF @ 20V Power - Max: 250mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	パッケージ: SOT-563, SOT-666	在庫2,114,760	Logic Level Gate	60V	294mA	1.6 Ohm @ 500mA, 10V	2.5V @ 250µA	0.7nC @ 4.5V	24.5pF @ 20V	250mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
DMN2991UDJ-7A	Diodes Incorporated	MOSFET 2N-CH 20V 0.52A SOT963 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 520mA (Ta) Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 21.5pF @ 15V Power - Max: 400mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-963 Supplier Device Package: SOT-963	パッケージ: -	在庫29,895	-	20V	520mA (Ta)	990mOhm @ 100mA, 4.5V	1V @ 250µA	0.35nC @ 4.5V	21.5pF @ 15V	400mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-963	SOT-963
MCQD08N06-TP	Micro Commercial Co	MOSFET 2N-CH 60V 8A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 22mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 30V Power - Max: 9.2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	パッケージ: -	Request a Quote	-	60V	8A	22mOhm @ 8A, 10V	3V @ 250µA	41.9nC @ 10V	2000pF @ 30V	9.2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
DMN2022UCA4-7	Diodes Incorporated	MOSFET BVDSS: 8V~24V X4-DSN1717- FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta) Rds On (Max) @ Id, Vgs: 22mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 1438pF @ 10V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-XFBGA, DSBGA Supplier Device Package: X4-DSN1717-4	パッケージ: -	Request a Quote	-	24V	7.8A (Ta)	22mOhm @ 3A, 4.5V	1.4V @ 1mA	12.5nC @ 4V	1438pF @ 10V	1W	-55°C ~ 150°C (TJ)	Surface Mount	4-XFBGA, DSBGA	X4-DSN1717-4
NTTFD4D1N03P1E	onsemi	MOSFET 2N-CH 30V 12A/54A 12WQFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 54A (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 10A, 10V, 3.5mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.2V @ 270µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1103pF @ 15V, 972pF @ 15V Power - Max: 1W (Ta), 20W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 12-PowerWQFN Supplier Device Package: 12-WQFN (3.3x3.3)	パッケージ: -	在庫8,247	-	30V	12A (Ta), 54A (Tc)	4.3mOhm @ 10A, 10V, 3.5mOhm @ 10A, 10V	2.2V @ 270µA	15nC @ 10V, 14nC @ 10V	1103pF @ 15V, 972pF @ 15V	1W (Ta), 20W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	12-PowerWQFN	12-WQFN (3.3x3.3)
SIA922EDJ-T4-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 4.4A SC70-6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 4.5A (Tc) Rds On (Max) @ Id, Vgs: 64mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.9W (Ta), 7.8W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SC-70-6 Dual Supplier Device Package: PowerPAK® SC-70-6 Dual	パッケージ: -	Request a Quote	-	30V	4.4A (Ta), 4.5A (Tc)	64mOhm @ 3A, 4.5V	1.4V @ 250µA	12nC @ 10V	-	1.9W (Ta), 7.8W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SC-70-6 Dual	PowerPAK® SC-70-6 Dual
SSM6N7002BFU-T5L-F	Toshiba Semiconductor and Storage	MOSFET 2N-CH 60V 0.2A US6 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 200mA Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 3.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V Power - Max: 300mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	パッケージ: -	Request a Quote	Logic Level Gate	60V	200mA	2.1Ohm @ 500mA, 10V	3.1V @ 250µA	-	17pF @ 25V	300mW	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	US6
UPA672CT-T1-AT	Renesas Electronics Corporation	MOSFET 2N-CH 60V 0.1A SC88 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate, 4.5V Drive Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 2.7Ohm @ 100mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 10V Power - Max: 200mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-88	パッケージ: -	Request a Quote	Logic Level Gate, 4.5V Drive	60V	100mA (Ta)	2.7Ohm @ 100mA, 10V	2.5V @ 250µA	2nC @ 10V	20pF @ 10V	200mW (Ta)	150°C	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-88
IRF40H233ATMA1	Infineon Technologies	MOSFET 2N-CH 40V 65A 8TDSON FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 35A, 10V Vgs(th) (Max) @ Id: 3.9V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 20V Power - Max: 3.8W (Ta), 50W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-4	パッケージ: -	Request a Quote	-	40V	65A (Tc)	6.2mOhm @ 35A, 10V	3.9V @ 50µA	57nC @ 10V	2200pF @ 20V	3.8W (Ta), 50W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PG-TDSON-8-4
SQJB02ELP-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 40V 30A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 20V Power - Max: 27W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	パッケージ: -	在庫25,422	-	40V	30A (Tc)	7.5mOhm @ 6A, 10V	2.2V @ 250µA	32nC @ 10V	1700pF @ 20V	27W	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual
PSMN6R8-40HSX	Nexperia USA Inc.	MOSFET 2N-CH 40V 40A LFPAK56D FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Rds On (Max) @ Id, Vgs: 6.8mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 28.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1947pF @ 25V Power - Max: 64W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Supplier Device Package: LFPAK56D	パッケージ: -	在庫4,653	-	40V	40A (Ta)	6.8mOhm @ 20A, 10V	4V @ 1mA	28.9nC @ 10V	1947pF @ 25V	64W (Ta)	-55°C ~ 175°C (TJ)	Surface Mount	SOT-1205, 8-LFPAK56	LFPAK56D

AO9926BL_101

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7.6A
Rds On (Max) @ Id, Vgs: 23 mOhm @ 7.6A, 10V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫7,952

Standard

20V

7.6A

23 mOhm @ 7.6A, 10V

1.1V @ 250µA

12.5nC @ 10V

630pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

EMH2409-TL-H

ON Semiconductor

MOSFET 2N-CH 30V 4A EMH8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 59 mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 10V
Power - Max: 1.2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 8-EMH

パッケージ: 8-SMD, Flat Lead

在庫5,040

Logic Level Gate

30V

4A

59 mOhm @ 2A, 10V

-

4.4nC @ 10V

240pF @ 10V

1.2W

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

8-EMH

SI4942DY-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 40V 5.3A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Rds On (Max) @ Id, Vgs: 21 mOhm @ 7.4A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫2,208

Logic Level Gate

40V

5.3A

21 mOhm @ 7.4A, 10V

3V @ 250µA

32nC @ 10V

-

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SI4539ADY-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 30V 4.4A 8-SOIC

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.4A, 3.7A
Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.9A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫435,036

Logic Level Gate

30V

4.4A, 3.7A

36 mOhm @ 5.9A, 10V

1V @ 250µA (Min)

20nC @ 10V

-

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SI3909DV-T1-E3

Vishay Siliconix

MOSFET 2P-CH 20V 6TSOP

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.8A, 4.5V
Vgs(th) (Max) @ Id: 500mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.15W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP

パッケージ: SOT-23-6 Thin, TSOT-23-6

在庫535,764

Logic Level Gate

20V

-

200 mOhm @ 1.8A, 4.5V

500mV @ 250µA (Min)

4nC @ 4.5V

-

1.15W

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

6-TSOP

SI4804BDY-T1-E3

Vishay Siliconix

MOSFET 2N-CH 30V 5.7A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.7A
Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫1,059,888

Logic Level Gate

30V

5.7A

22 mOhm @ 7.5A, 10V

3V @ 250µA

11nC @ 4.5V

-

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

IPG20N04S4L07AATMA1

Infineon Technologies

MOSFET 2N-CH 8TDSON

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 30µA
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3980pF @ 25V
Power - Max: 65W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-TDSON-8-10

パッケージ: 8-PowerVDFN

在庫2,752

Logic Level Gate

40V

20A

7.2 mOhm @ 17A, 10V

2.2V @ 30µA

50nC @ 10V

3980pF @ 25V

65W

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerVDFN

PG-TDSON-8-10

IRF7104PBF

Infineon Technologies

MOSFET 2P-CH 20V 2.3A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Rds On (Max) @ Id, Vgs: 250 mOhm @ 1A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫5,536

Logic Level Gate

20V

2.3A

250 mOhm @ 1A, 10V

3V @ 250µA

25nC @ 10V

290pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

GMM3X120-0075X2-SMDSAM

IXYS

MOSFET 6N-CH 75V 110A 24-SMD

FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 110A
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 24-SMD, Gull Wing
Supplier Device Package: 24-SMD

パッケージ: 24-SMD, Gull Wing

在庫2,112

Standard

75V

110A

-

4V @ 1mA

115nC @ 10V

-

-55°C ~ 175°C (TJ)

Surface Mount

24-SMD, Gull Wing

24-SMD

NVMFD5853NLWFT1G

ON Semiconductor

MOSFET 2N-CH 40V 12A SO8FL

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 12A
Rds On (Max) @ Id, Vgs: 10 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V
Power - Max: 3W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)

パッケージ: 8-PowerTDFN

在庫2,112

Logic Level Gate

40V

12A

10 mOhm @ 15A, 10V

2.4V @ 250µA

23nC @ 10V

1100pF @ 25V

3W

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)

FDWS9420_F085

Fairchild/ON Semiconductor

40V DUAL AUTO N-CH POWER TRENCH

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 20V
Power - Max: 75W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-PQFN (5x6)

パッケージ: 8-PowerTDFN

在庫3,248

Standard

40V

20A (Tc)

5.8 mOhm @ 20A, 10V

4V @ 250µA

43nC @ 10V

2100pF @ 20V

75W

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

8-PQFN (5x6)

SH8M41GZETB

Rohm Semiconductor

MOSFET N/P-CH 80V 3.4A/2.6A 8SOP

FET Type: N and P-Channel
FET Feature: Logic Level Gate, 4V Drive
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.6A
Rds On (Max) @ Id, Vgs: 130 mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫3,888

Logic Level Gate, 4V Drive

80V

3.4A, 2.6A

130 mOhm @ 3.4A, 10V

2.5V @ 1mA

9.2nC @ 5V

600pF @ 10V

2W

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

AON6906A

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 9.1A/10A 8DFN

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.1A, 10A
Rds On (Max) @ Id, Vgs: 14.4 mOhm @ 9.1A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 15V
Power - Max: 1.9W, 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-DFN (5x6)

パッケージ: 8-PowerVDFN

在庫5,424

Logic Level Gate

30V

9.1A, 10A

14.4 mOhm @ 9.1A, 10V

2.4V @ 250µA

9nC @ 10V

670pF @ 15V

1.9W, 2W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

8-DFN (5x6)

PHN203,518

Nexperia USA Inc.

MOSFET 2N-CH 30V 6.3A SOT96-1

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.3A
Rds On (Max) @ Id, Vgs: 30 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 14.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 20V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫7,232

Logic Level Gate

30V

6.3A

30 mOhm @ 7A, 10V

2V @ 1mA

14.6nC @ 10V

560pF @ 20V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

NVMFD5877NLT1G

ON Semiconductor

MOSFET 2N-CH 60V 6A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 39 mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V
Power - Max: 3.2W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)

パッケージ: 8-PowerTDFN

在庫4,944

Logic Level Gate

60V

6A

39 mOhm @ 7.5A, 10V

3V @ 250µA

20nC @ 10V

540pF @ 25V

3.2W

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)

DI9942T

Diodes Incorporated

MOSFET N/P-CH 20V 2.5A 8-SOIC

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.6W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫7,264

Standard

20V

2.5A

-

1.6W

-

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

BUK7K29-100EX

Nexperia USA Inc.

MOSFET 2N-CH 100V 29.5A LFPAK56

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 29.5A
Rds On (Max) @ Id, Vgs: 24.5 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 38.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2436pF @ 25V
Power - Max: 68W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Supplier Device Package: LFPAK56D

パッケージ: SOT-1205, 8-LFPAK56

在庫2,272

Standard

100V

29.5A

24.5 mOhm @ 10A, 10V

4V @ 1mA

38.1nC @ 10V

2436pF @ 25V

68W

-55°C ~ 175°C (TJ)

Surface Mount

SOT-1205, 8-LFPAK56

LFPAK56D

NTZD5110NT1G

ON Semiconductor

MOSFET 2N-CH 60V 0.294A SOT563

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 294mA
Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 24.5pF @ 20V
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

パッケージ: SOT-563, SOT-666

在庫2,114,760

Logic Level Gate

60V

294mA

1.6 Ohm @ 500mA, 10V

2.5V @ 250µA

0.7nC @ 4.5V

24.5pF @ 20V

250mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

DMN2991UDJ-7A

Diodes Incorporated

MOSFET 2N-CH 20V 0.52A SOT963

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 520mA (Ta)
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 21.5pF @ 15V
Power - Max: 400mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-963
Supplier Device Package: SOT-963

パッケージ: -

在庫29,895

-

20V

520mA (Ta)

990mOhm @ 100mA, 4.5V

1V @ 250µA

0.35nC @ 4.5V

21.5pF @ 15V

400mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-963

MCQD08N06-TP

Micro Commercial Co

MOSFET 2N-CH 60V 8A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 22mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 41.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 30V
Power - Max: 9.2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

パッケージ: -

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-

60V

8A

22mOhm @ 8A, 10V

3V @ 250µA

41.9nC @ 10V

2000pF @ 30V

9.2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

DMN2022UCA4-7

Diodes Incorporated

MOSFET BVDSS: 8V~24V X4-DSN1717-

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 24V
Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds: 1438pF @ 10V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-XFBGA, DSBGA
Supplier Device Package: X4-DSN1717-4

パッケージ: -

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-

24V

7.8A (Ta)

22mOhm @ 3A, 4.5V

1.4V @ 1mA

12.5nC @ 4V

1438pF @ 10V

1W

-55°C ~ 150°C (TJ)

Surface Mount

4-XFBGA, DSBGA

X4-DSN1717-4

NTTFD4D1N03P1E

onsemi

MOSFET 2N-CH 30V 12A/54A 12WQFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 10A, 10V, 3.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 270µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1103pF @ 15V, 972pF @ 15V
Power - Max: 1W (Ta), 20W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 12-PowerWQFN
Supplier Device Package: 12-WQFN (3.3x3.3)

パッケージ: -

在庫8,247

-

30V

12A (Ta), 54A (Tc)

4.3mOhm @ 10A, 10V, 3.5mOhm @ 10A, 10V

2.2V @ 270µA

15nC @ 10V, 14nC @ 10V

1103pF @ 15V, 972pF @ 15V

1W (Ta), 20W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

12-PowerWQFN

12-WQFN (3.3x3.3)

SIA922EDJ-T4-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 4.4A SC70-6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.9W (Ta), 7.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6 Dual
Supplier Device Package: PowerPAK® SC-70-6 Dual

パッケージ: -

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-

30V

4.4A (Ta), 4.5A (Tc)

64mOhm @ 3A, 4.5V

1.4V @ 250µA

12nC @ 10V

-

1.9W (Ta), 7.8W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK® SC-70-6 Dual

SSM6N7002BFU-T5L-F

Toshiba Semiconductor and Storage

MOSFET 2N-CH 60V 0.2A US6

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 200mA
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 3.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V
Power - Max: 300mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

パッケージ: -

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Logic Level Gate

60V

200mA

2.1Ohm @ 500mA, 10V

3.1V @ 250µA

-

17pF @ 25V

300mW

150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

US6

UPA672CT-T1-AT

Renesas Electronics Corporation

MOSFET 2N-CH 60V 0.1A SC88

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 2.7Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 10V
Power - Max: 200mW (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88

パッケージ: -

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Logic Level Gate, 4.5V Drive

60V

100mA (Ta)

2.7Ohm @ 100mA, 10V

2.5V @ 250µA

2nC @ 10V

20pF @ 10V

200mW (Ta)

150°C

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-88

IRF40H233ATMA1

Infineon Technologies

MOSFET 2N-CH 40V 65A 8TDSON

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 35A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 20V
Power - Max: 3.8W (Ta), 50W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-TDSON-8-4

パッケージ: -

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-

40V

65A (Tc)

6.2mOhm @ 35A, 10V

3.9V @ 50µA

57nC @ 10V

2200pF @ 20V

3.8W (Ta), 50W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerVDFN

PG-TDSON-8-4

SQJB02ELP-T1_GE3

Vishay Siliconix

MOSFET 2N-CH 40V 30A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 20V
Power - Max: 27W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual

パッケージ: -

在庫25,422

-

40V

30A (Tc)

7.5mOhm @ 6A, 10V

2.2V @ 250µA

32nC @ 10V

1700pF @ 20V

27W

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SO-8 Dual

PSMN6R8-40HSX

Nexperia USA Inc.

MOSFET 2N-CH 40V 40A LFPAK56D

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 28.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1947pF @ 25V
Power - Max: 64W (Ta)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Supplier Device Package: LFPAK56D

パッケージ: -

在庫4,653

-

40V

40A (Ta)

6.8mOhm @ 20A, 10V

4V @ 1mA

28.9nC @ 10V

1947pF @ 25V

64W (Ta)

-55°C ~ 175°C (TJ)

Surface Mount

SOT-1205, 8-LFPAK56

LFPAK56D